EIC 1N4247

Certificate TH97/10561QM
1N4245 - 1N4249
Certificate TW00/17276EM
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
M1A
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
Glass passivated chip
High forward surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
1.00 (25.4)
MIN.
0.085(2.16)
0.075(1.91)
0.138(3.51)
0.122(3.10)
MECHANICAL DATA :
1.00 (25.4)
MIN.
0.024(0.60)
0.022(0.55)
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 1N4245 1N4246 1N4247 1N4248 1N4249
UNIT
Maximum Working Peak Reverse Voltage
VRWM
200
400
600
800
1000
V
Minimum Breakdown Voltage @ 100 μA
VBR(MIN)
240
480
720
960
1150
V
IF(AV)
1.0
A
IFSM
25
A
VF
1.3
V
at VRWM , Ta = 25 °C
IR
1.0
at VRWM , Ta = 150 °C
IR(H)
150
Trr
5.0
μs
RӨJL
42
°C/W
TJ, TSTG
-65 to +175
°C
Maximum Average Forward Current at Ta = 55 °C
Peak Forward Surge Current
8.3 ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I F = 3.0 A
Maximum Reverse Current
Maximum Reverse Recovery Time ( Note 1 )
Thermal Resistance , Junction to Lead (Note 2)
Operating Junction and Storage Temperature Range
μA
Notes :
(1) Reverse Recovery Test Conditions : I F = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A.
(2) At 3/8"(10 mm) lead length form body.
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Rev. 03 : November 2, 2006