Certificate TH97/10561QM 1N5817WB - 1N5819WB Certificate TW00/17276EM SCHOTTKY BARRIER DIODES PRV : 20 - 40 Volts IO : 1.0 Ampere 1.65 1.55 2.7 2.6 0.6 0.5 SOD-123 1.15 1.05 * Case : SOD-123 * Weight : 0.01 gram (approximately) * 1N5817WB Marking Code : A0 * 1N5818WB Marking Code : ME * 1N5819WB Marking Code : SR 0.135 0.127 MECHANICAL DATA : 3.9 3.7 Dimensions in millimeters Absolute Maximum Rating (Ta = 25 °C) Parameter Symbol DC Reverse Voltage Value 1N5817WB 1N5818WB 20 VR V 30 1N5819WB 40 IO Average Rectified Output Current Unit 1.0 A Power Dissipation Ptot 450 mW Operating Junction Temperature Range TJ -55 to + 150 °C TSTG -55 to + 150 °C Storage Temperature Range Electrical Characteristics (Ta = 25 °C ) Parameter Symbol Reverse Breakdown Voltage 1N5817WB at I R = 1 mA 1N5818WB VBR 1N5819WB Reverse Leakage Current Forward Voltage Typ Max 20 - - 30 - - 40 - - at VR = 20 V 1N5817WB - - 1 at VR = 30 V 1N5818WB - - 1 at VR = 40 V 1N5819WB - - 1 at VR = 4 V 1N5819WB - - 0.050 at VR = 6 V 1N5819WB - - 0.075 at I F = 0.1 A 1N5819WB - - 0.45 at I F = 1.0 A 1N5817WB - - 0.45 - - 0.55 - - 0.60 1N5817WB - - 0.750 1N5818WB - - 0.875 1N5819WB - - 0.900 - - 120 IR 1N5818WB 1N5819WB at I F = 3.0 A Diode Capacitance at VR = 4 V, f = 1MHz Page 1 of 1 Min VF CD Unit V mA V pF Rev. 01 : August 22, 2006