Certificate TH97/10561QM SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 15 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free ~ ~ 13.5 ± 0.3 * * * * * * * * * 1.0 ± 0.1 MECHANICAL DATA : 10 7.5 7.5 ±0.2 ±0.2 ±0.2 * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.11 grams ( Approximaly ) 17.5 ± 0.5 RBV1500D - RBV1510D Certificate TW00/17276EM 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified . Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL RBV RBV RBV RBV RBV RBV RBV 1500D 1501D 1502D 1504D 1506D 1508D 1510D UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 55°C IF(AV) 15 A IFSM 300 A I2t VF 375 A2S Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at I F = 15 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range 1.1 V IR 10 μA IR(H) 200 μA RӨJC 1.5 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate. Page 1 of 2 Rev. 04 : Decsember 12, 2005 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( RBV1500D - RBV1510D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT HEAT-SINK MOUNTING, Tc 5" x 4" x 3" THK. (12.7cm x 12.7cm x 7.3cm) Al.-Finned plate 15 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 18 12 9 6 3 250 150 100 25 50 75 100 125 150 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 50 0 0 TJ = 50 °C 200 0 175 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 10 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 100 10 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES TJ = 100 °C 10 Pulse Width = 300 μs 1 % Duty Cycle 1.0 1.0 TJ = 25 °C 0.1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 10 0 12 0 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 04 : Decsember 12, 2005