RBV1500 - RBV1510 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 15 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free 13.5 ± 0.3 * * * * * * * * * 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.11 grams ( Approximaly ) 2.0 ± 0.2 10 7.5 7.5 ±0.2 ±0.2 ±0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage VRRM RBV 1500 50 Maximum RMS Voltage RATING SYMBOL RBV 1501 100 RBV 1502 200 RBV 1504 400 RBV 1506 600 RBV 1508 800 RBV 1510 1000 UNIT V VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 55°C IF(AV) 15 A IFSM 300 A I2t VF 375 A 2S 1.1 V µA Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 7.5 A Maximum DC Reverse Current Ta = 25 °C IR 10 at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA RθJC 1.9 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate. Page 1 of 2 Rev. 03 : September 9, 2005 RATING AND CHARACTERISTIC CURVES ( RBV1500 - RBV1510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 18 HEAT-SINK MOUNTING, Tc 5" x 4" x 3" THK. (12.7cm x 12.7cm x 7.3cm) 15 12 9 6 3 0 0 25 50 75 100 125 150 250 TJ = 50 °C 200 150 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 50 0 175 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 100 10 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES TJ = 100 °C 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 1.0 TJ = 25 °C 0.1 TJ = 25 °C 0.0 0.1 0 20 40 60 80 100 12 0 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : September 9, 2005