STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier High Speed Switching (Max. trr<30ns @ IF = 8A) The FFD08S60S_F085 is stealth 2 rectifier with soft High Reverse Voltage and High Reliability RoHS Compliant recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost Applications diode in switching power supplies and other power swith- General Purpose ching applications. Their low stored charge and hyper Avalanche Energy Rated Qualified to AEC Q101 fast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Switching Mode Power Supply Boost Diode in continuous mode power factor corrections Power switching circuits Switching Mode Power Supply CATHODE (FLANGE) CATHODE CATHODE ANODE ANODE Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Peak Repetitive Reverse Voltage VRRM Ratings 600 Units V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V Average Rectified Forward Current @ TC = 115oC Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 8 A 80 A IF(AV) IFSM TJ, TSTG Operating Junction and Storage Temperature o -65 to + 150 C Thermal Characteristics TC = 25°C unless otherwise noted RθJC Maximum Thermal Resistance, Junction to Case 3.0 o C/W Package Marking and Ordering Information Device Marking F08S60S Device FFD08S60S_F085 ©2010 Fairchild Semiconductor Corporation FFD08S60S_F085 Rev. C1 Package TO252 Reel Size 13” 1 Tape Width 12mm Quantity 2500 www.fairchildsemi.com FFD08S60S_F085 Stealth 2 Rectifier October 2010 Parameter Min Typ Max Units IF = 8A, IF = 8A TC = 25°C TC = 125°C - 2.1 1.6 2.6 - V IRM1 VR = 600V, VR = 600V TC = 25°C - - 100 500 µA trr IF = 1A, di/dt = 100A/s, VR = 30V TC = 25°C VFM 1 Test Conditions TC = 125°C - - 25 ns trr - 19 30 ns Irr - 2.2 - A - 0.6 - Qrr - 21 - nC trr - 58 - ns Irr - 4.3 - A S factor S factor IF = 8A, di/dt = 200A/s, VR = 390V IF = 8A, di/dt = 200A/s, VR = 390V TC = 25°C TC = 125°C Qrr WAVL Avalanche Energy (L = 40mH) 1.3 - 125 - nC 20 - - mJ Notes: 1. Pulse : Test Pulse width = 300us, Duty Cycle = 2% FFD08S60S_F085 Rev. C1 2 www.fairchildsemi.com FFD08S60S_F085 Stealth 2 Rectifier Electrical Characteristics TC = 25°C unless otherwise noted Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time Figure 5. Typical Reverse Recovery Current Figure 6. Forward Current Deration Curve FFD08S60S_F085 Rev. C1 3 www.fairchildsemi.com FFD08S60S_F085 Stealth 2 Rectifier Typical Performance Characteristics TC = 25°C unless otherwise noted D-PAK (TO252) FFD08S60S_F085 Rev. C1 4 December 2008 www.fairchildsemi.com FFD08S60S_F085 Stealth 2 Rectifier Mechanical Dimensions AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FFD08S60S_F085 Rev. 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