tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • • Fast switching speed. Applications • High density cell design for extremely low RDS(ON). • • • • • High power and current handling capability. • Qualified to AEC Q101 • RoHS Compliant RDS(ON) = 0.180 Ω @ VGS = -2.5 V. DC/DC converter Power management Load switch Battery protection D D -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V D D SO-8 S S S 4 6 3 7 2 8 1 G Absolute Maximum Ratings Symbol 5 o T A=25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current -3.5 A - Continuous (Note 1a) - Pulsed PD -18 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg FDS9431A_F085 P-Channel 2.5V Specified MOSFET February 2010 Operating and Storage Junction Temperature Range W 1.0 -55 to +150 °C Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RqJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9431A FDS9431A_F085 13’’ 12mm 2500 units ©2010 Fairchild Semiconductor Corporation FDS9431A_F085 Rev. A 1 www.fairchildsemi.com Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 mA DBVDSS DTJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 mA,Referenced to 25°C IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse IGSSR On Characteristics -20 V -28 mV/°C -1 mA VGS = 8 V, VDS = 0 V 100 nA VGS = -8 V, VDS = 0 V -100 nA VDS = -16 V, VGS = 0 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 mA DVGS(th) DTJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 mA,Referenced to 25°C ID(on) On-State Drain Current VGS = -4.5 V, ID = -3.5 A VGS = -2.5 V, ID = -3.0 A VGS = -4.5 V, ID = -3.5 A TJ=125°C VGS = -4.5 V, VDS =-5 V gFS Forward Transconductance VDS = -5 V, ID = -3.5 A 6.5 S VDS = -10 V, VGS = 0 V, f = 1.0 MHz 405 pF 170 pF 45 pF -0.4 -0.6 -1 2 V mV/°C 0.110 0.140 0.155 0.130 0.180 0.220 -10 W W W A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 W 6.5 13 ns 20 35 ns Turn-Off Delay Time 31 50 ns Turn-Off Fall Time 21 35 ns 6 8.5 nC VDS = -5 V, ID = -3.5 A, VGS = -4.5 V 0.8 nC 1.3 nC FDS9431A_F085 P-Channel 2.5V Specified MOSFET Electrical Characteristics Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) -0.7 -2.1 A -1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W on a minimum mounting pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDS9431A_F085 Rev. A 2 www.fairchildsemi.com VGS= -4.5V -3.5V 8 -2.5V RDS(ON) , NORMALIZED -ID, DRAIN CURRENT (A) DRAIN-SOURCE ON-RESISTANCE 10 6 -2.0V 4 2 -1.5V 2 1.8 VGS = -2.0V 1.6 -2.5 1.4 -3.0 1.2 -3.5 -4.0 -4.5 1 0 0 1 2 3 4 0.8 5 0 2 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 10 0.5 I D = -1.6A I D = -0.8A R DS(ON),ON-RESISTANCE(OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 V GS = -4.5V 1.4 0.4 1.2 0.3 TJ = 125°C 0.2 1 25°C 0.1 0.8 0.6 -50 0 -25 0 25 50 75 100 125 1 150 2 -V TJ , JUNCTION TEMPERATURE (°C) -I S , REVERSE DRAIN CURRENT (A) TA = -55°C 25°C 125°C 8 4 5 ,GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V 3 GS Figure 3. On-Resistance Variation withTemperature. -I D , DRAIN CURRENT (A) 6 -I D , DRAIN CURRENT (A) 6 4 2 0 10 VGS = 0V 1 TJ = 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0 1 2 3 4 0 -VGS , GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. FDS9431A_F085 Rev. A 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 www.fairchildsemi.com FDS9431A_F085 P-Channel 2.5V Specified MOSFET Typical Characteristics (continued) 2000 5 V D S = -5V 4 1000 -15V C AP AC I TA NC E (pF) -V GS , G ATE -S O U R CE VO LTAG E (V ) I D = -1.6A 3 2 1 Ciss 500 200 Coss f = 1 M Hz VG S = 0 V 100 0 0 2 4 6 50 0.1 8 0.2 Q g , G ATE C H ARG E (nC ) 50 100 S( O RD 1m IT LI M N) 10 m 3 100 0. 05 2 5 10 20 50 SINGLE PULSE o RθJA= 125 C/W s 40 o TA= 25 C s ms 10 s DC VVGS == -4.5V G S -4.5V SINGLE PULSE SING L E PUL SE == 125°C/W RR 135 °C/W θJA J A θ A TTA == 25°C 2 5°C 1 us 1s 0 .5 0.5 Figure 8. Capacitance Characteristics. POWER (W) 10 Crss -V DS , D R A IN T O S OU R CE V OLTA GE (V) Figure 7. Gate Charge Characteristics. - I D , D R AI N C U R R EN T (A) FDS9431A_F085 P-Channel 2.5V Specified MOSFET Typical Characteristics 30 20 10 A 0. 01 0 .1 0 .3 1 2 5 10 0 0.001 30 0.01 r(t), NORM ALIZED EFFECTIVE Figure 9. Maximum Safe Operating Area. TR ANSI ENT TH ER MAL RESISTANC E 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) - VD S , DR A IN -SO UR C E V OLTA GE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 D = 0.5 R θJ A (t) = r(t) * R θJ A R θJ A= 125°C /W 0.2 0.1 0 .0 5 P(p k ) 0 .0 2 0.02 t1 0.0 1 0.01 S i n g le P ul s e t2 TJ - TA = P * RθJA ( t) 0.0 05 D u t y C y c l e, D = t 1 /t 2 0.0 02 0.0 01 0.0001 0.0 01 0.01 0.1 t 1, TI ME (s e c ) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDS9431A_F085 Rev. A 4 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FDS9431A_F085 Rev. A 5 www.fairchildsemi.com FDS9431A_F085 P-Channel 2.5V Specified MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench® AccuPower™ The Power Franchise® FRFET® ® Global Power ResourceSM PowerXS™ Auto-SPM™ Green FPS™ Programmable Active Droop™ Build it Now™ Green FPS™ e-Series™ QFET® CorePLUS™ TinyBoost™ QS™ Gmax™ CorePOWER™ TinyBuck™ Quiet Series™ GTO™ CROSSVOLT™ TinyCalc™ RapidConfigure™ IntelliMAX™ CTL™ TinyLogic® ISOPLANAR™ Current Transfer Logic™ ™ TINYOPTO™ ® MegaBuck™ DEUXPEED TinyPower™ Dual Cool™ Saving our world, 1mW/W/kW at a time™ MICROCOUPLER™ TinyPWM™ EcoSPARK® SignalWise™ MicroFET™ TinyWire™ EfficentMax™ SmartMax™ MicroPak™ TriFault Detect™ SMART START™ MicroPak2™ ® TRUECURRENT™* SPM® MillerDrive™ μSerDes™ STEALTH™ MotionMax™ Fairchild® SuperFET™ Motion-SPM™ Fairchild Semiconductor® SuperSOT™-3 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-6 OPTOLOGIC® FACT® ® Ultra FRFET™ ® OPTOPLANAR SuperSOT™-8 FAST ® UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ FlashWriter® * PDP SPM™ XS™ ®* FPS™ Power-SPM™ F-PFS™