2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) MMBT5551 2N5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T =25°C unless otherwise noted a Symbol Max Parameter 2N5551 *MMBT5551 350 2.8 PD Total Device Dissipation Derate above 25°C 625 5.0 RθJA Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 Units mW mW/°C °C/W 357 °C/W * Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06." ©2006 Fairchild Semiconductor Corporation 2N5551- MMBT5551 Rev. B 1 www.fairchildsemi.com 2N5551- MMBT5551 NPN General Purpose Amplifier April 2006 Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 160 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 180 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 6.0 ICBO Collector Cutoff Current VCB = 120V, IE = 0 VCB = 120V, IE = 0, Ta = 100°C 50 50 nA µA IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 50 nA V On Characteristics hFE DC Current Gain IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V 80 80 30 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.15 0.20 V V VBE(sat) Base-Emitter On Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 1.0 1.0 V V 300 MHz 6.0 pF 20 pF Small Signal Characteristics fT Current Gain Bandwidth Product IC = 10mA, VCE = 10V, f = 100MHz Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz Cibo Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz Hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0kHz NF Noise Figure IC = 250 uA, VCE = 5.0 V, RS=1.0 kΩ, f=10 Hz to 15.7 kHz 100 50 250 8.0 dB Spice Model NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10) 2 2N5551- MMBT5551 Rev. B www.fairchildsemi.com 2N5551- MMBT5551 NPN General Purpose Amplifier Electrical Characteristics Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VCESAT - COLLECTOR EMITTER VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current hFE - TYPICAL PULSED CURRENT GAIN 250 0.5 o 125 C 200 150 0.3 o 25 C 100 o 25 C 0.2 o -40 C 50 VCE = 5V 0 0.1 0.2 0.5 1 2 5 10 20 50 o - 40 C 0.0 100 1 100 Figure 4. Base-Emitter On Voltage vs Collector Current 1.0 o 1.0 - 40 C 0.8 o - 40 C 0.8 o 25 C 0.6 0.6 o 125 C 0.4 o 25 C o 125 C 0.4 0.2 0.2 10 100 VCE = 5V 0.0 0.1 0.0 1 200 1 10 100 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Input and Output Capacitance vs Reverse Voltage 50 30 VCB = 100V f = 1.0 MHz 25 CAPACITANCE (pF) I CBO- COLLE CTOR CURRENT (nA) 10 IC - COLLECTOR CURRENT (mA) VBEON - BASE EMITTER ON VOLTAGE (V) Figure 3. Base-Emitter Saturation Voltage vs Collector Current β = 10 o 125 C 0.1 IC - COLLECTOR CURRENT (mA) VBESAT - BASE EMITTER VOLTAGE (V) β = 10 0.4 10 20 15 C ib 10 5 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( ° C) 0 0.1 125 1 10 100 V CE - COLLECTOR VOLTAGE (V) 3 2N5551- MMBT5551 Rev. B C cb www.fairchildsemi.com 2N5551- MMBT5551 NPN General Purpose Amplifier Typical Performance Characteristics (Continued) Figure 8. Small Signal Current Gain vs Collector Current Between Emitter-Base h FE - SMALL SIGNAL CURRENT GAIN BV CER - BREAKDOWN VOLTAGE (V) Figure 7. Collector- Emitter Breakdown Voltage with Resistance Between Emitter-Base 260 I C = 1.0 mA 240 220 200 180 160 0.1 1 10 100 1000 RESISTANCE (kΩ ) vs Collector Current 16 FREG = 20 MHz V CE = 10V 12 8 4 0 1 10 I C - COLLECTOR CURRENT (mA) 50 Figure 9. Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (mW) 700 600 500 TO-92 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 4 2N5551- MMBT5551 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 5 2N5551- MMBT5551 Rev. B www.fairchildsemi.com 2N5551- MMBT5551 NPN General Purpose Amplifier TRADEMARKS