SGP23N60UF 600V PT IGBT General Description Features Fairchild®’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature. • • • • 12 A, 600 V, TC = 100°C Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A Typical Fall Time. . . . . . . . . .220ns at TJ = 125°C High Input Impedance C G GCE TO-220 E Applications General Inverter, PFC ©1999 Fairchild Semiconductor Corporation SGP23N60UF Rev. C0 1 www.fairchildsemi.com SGP23N60UF 600 V PT IGBT April 2013 Symbol VCES VGES IC ICM (1) PD TJ Tstg TL SGP23N60UF 600 V PT IGBT Absolute Maximum Ratings TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C SGP23N60UF 600 20 23 12 92 100 40 -55 to +150 -55 to +150 Unit V V A A A W W C C 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Electrical Characteristics of the IGBT T Symbol Off Characteristics Parameter C Min. Typ. Max. Unit 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 720 100 25 ---- pF pF pF --------------- 17 27 60 70 115 135 250 23 32 100 220 205 320 525 --130 150 --400 --200 250 --800 ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE(th) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 12mA, VCE = VGE IC = 12A, VGE = 15V IC = 23A, VGE = 15V Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss VCE(sat) Dynamic Characteristics Switching Characteristics ©1999 Fairchild Semiconductor Corporation SGP23N60UF Rev. C0 Unit C/W C/W = 25C unless otherwise noted Test Conditions BVCES BVCES/ TJ ICES IGES On Characteristics Max. 1.2 62.5 VCC = 300 V, IC = 12A, RG = 23, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 12A, RG = 23, VGE = 15V, Inductive Load, TC = 125C 2 www.fairchildsemi.com 50 Common Emitter TC = 25℃ 60 12V Collector Current, I C [A] 15V [A] 80 C Collector Current, I Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 20V VGE = 10V 40 20 40 30 20 10 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics 20 VCC = 300V Load Current : peak of square wave Common Emitter VGE = 15V 3 24A 2 12A 15 Load Current [A] [V] CE 10 Fig 2. Typical Saturation Voltage Characteristics 4 Collector - Emitter Voltage, V 1 Collector - Emitter Voltage, VCE [V] IC = 6A 1 10 5 0 Duty cycle : 50% TC = 100℃ Power Dissipation = 21W 0 0 30 60 90 120 150 0.1 1 Case Temperature, TC [℃] 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125℃ [V] 16 CE 16 Collector - Emitter Voltage, V CE [V] Common Emitter TC = 25℃ Collector - Emitter Voltage, V 1000 Frequency [KHz] 12 8 24A 4 12A IC = 6A 12 8 24A 4 12A IC = 6A 0 0 0 4 8 12 16 0 20 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©1999 Fairchild Semiconductor Corporation SGP23N60UF Rev. C0 4 Fig 6. Saturation Voltage vs. VGE 3 www.fairchildsemi.com SGP23N60UF 600 V PT IGBT 100 200 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 1000 100 800 600 Coes 400 200 Ton Switching Time [ns] Capacitance [pF] Cies Common Emitter VCC = 300V, VGE = ± 15V IC = 12A TC = 25℃ TC = 125℃ Tr Cres 0 1 10 10 30 1 10 Collector - Emitter Voltage, VCE [V] 100 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 1000 Eoff Toff Switching Loss [uJ] Switching Time [ns] Common Emitter VCC = 300V, VGE = ± 15V IC = 12A TC = 25℃ TC = 125℃ Tf Toff Eon Eon Eoff 100 Common Emitter VCC = 300V, VGE = ± 15V IC = 12A TC = 25℃ TC = 125℃ 100 Tf 50 30 1 10 100 200 1 10 Gate Resistance, RG [ ] 200 Fig 10. Switching Loss vs. Gate Resistance 200 1000 Common Emitter VCC = 300V, VGE = ± 15V RG = 23 T C = 25℃ T C = 125℃ Common Emitter VCC = 300V, VGE = ± 15V RG = 23 TC = 25℃ TC = 125℃ Switching Time [ns] Switching Time [ns] 100 Gate Resistance, RG [ ] Fig 9. Turn-Off Characteristics vs. Gate Resistance 100 200 Gate Resistance, RG [ ] Ton Toff Tf Toff 100 Tr Tf 10 50 4 8 12 16 20 24 4 Collector Current, IC [A] 12 16 20 24 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©1999 Fairchild Semiconductor Corporation SGP23N60UF Rev. C0 8 Fig 12. Turn-Off Characteristics vs. Collector Current 4 www.fairchildsemi.com SGP23N60UF 600 V PT IGBT 1200 Eoff Eon Common Emitter VCC = 300V, VGE = ± 15V RG = 23 TC = 25℃ TC = 125℃ Eon Eoff 10 4 8 12 16 20 12 Gate - Emitter Voltage, V GE [ V ] Switching Loss [uJ] 100 Common Emitter RL = 25 TC = 25℃ 9 300 V 6 3 0 24 0 10 Collector Current, IC [A] 50 100 Collector Current, I C [A] [A] 50us C Collector Current, I 40 200 IC MAX. (Pulsed) 100us IC MAX. (Continuous) 10 1㎳ DC Operation 0.1 30 Fig 14. Gate Charge Characteristics 300 1 20 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current 100 200 V VCC = 100 V Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 10 1 Safe Operating Area VGE = 20V, TC = 100℃ 0.1 1000 1 10 Collector-Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [℃/W] 5 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 t1 0.01 t2 0.01 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm Zthjc + TC 0.005 10 -5 10 -4 10 -3 -2 10 10 -1 10 0 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©1999 Fairchild Semiconductor Corporation SGP23N60UF Rev. C0 5 www.fairchildsemi.com SGP23N60UF 600 V PT IGBT 15 1000 SGP23N60UF 600 V PT IGBT Mechanical Dimensions TO-220B03 Dimensions in Millimeters ©1999 Fairchild Semiconductor Corporation SGP23N60UF Rev. C0 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©1999 Fairchild Semiconductor Corporation SGP23N60UF Rev. 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