FDME410NZT N-Channel PowerTrench® MOSFET 20 V, 7 A, 26 mΩ Features General Description Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A Applications Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Li-lon Battery Pack Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A Baseband Switch Free from halogenated compounds and antimony oxides Load Switch HBM ESD protection level > 1800V (Note3) DC-DC Conversion RoHS Compliant G D Pin 1 D S D D D D G S D D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 20 Units V ±8 V 7 15 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1 Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 175 °C/W Package Marking and Ordering Information Device Marking 6T Device FDME410NZT ©2011 Fairchild Semiconductor Corporation FDME410NZT Rev.C1 Package MicroFET 1.6x1.6 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDME410NZT N-Channel PowerTrench® MOSFET November 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 μA 1.0 V 20 V 18 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) gFS Drain to Source On Resistance Forward Transconductance 0.4 0.7 -3 mV/°C VGS = 4.5 V, ID = 7 A 19 26 VGS = 2.5 V, ID = 6 A 20 31 VGS = 1.8 V, ID = 5 A 24 39 VGS = 1.5 V, ID = 4 A 31 53 VGS = 4.5 V, ID = 7 A , TJ = 125 °C 24 36 VDS = 5 V, ID = 7 A 35 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10 V, VGS = 0 V, f = 1 MHz 770 1025 pF 115 155 pF 75 115 pF Ω 1.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Qg Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge 7.3 15 3.4 10 ns 27 43 ns Fall Time 3.2 10 ns Total Gate Charge 9.2 13 nC VDD = 10 V, ID = 7 A VGS = 4.5 V, RGEN = 6 Ω VDD = 10 V, ID = 7 A VGS = 4.5 V ns 1.1 nC 1.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.6 A (Note 2) IF = 7 A, di/dt = 100 A/μs 0.7 1.2 V 15 27 ns 3.5 10 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 60 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 175 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDME410NZT Rev.C1 2 www.fairchildsemi.com FDME410NZT N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 15 2.5 ID, DRAIN CURRENT (A) VGS = 3 V 10 VGS = 2.5 V VGS = 1.8 V 5 VGS = 1.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 0.8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V 2.0 VGS =1.5 V VGS = 1.8 V 1.5 VGS = 2.5 V 1.0 0.5 1.0 0 5 Figure 1. On-Region Characteristics 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 100 ID = 7 A VGS = 4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 10 TJ = 150 oC TJ = 25 oC TJ = -55 oC 1.0 1.5 60 TJ = 125 oC 40 20 TJ = 25 oC 20 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS = 0 V TJ = 150 oC 1 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0 2.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDME410NZT Rev.C1 ID = 7 A Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.5 80 VGS, GATE TO SOURCE VOLTAGE (V) 15 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 3 V 3 www.fairchildsemi.com FDME410NZT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 7 A VDD = 8 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = 10 V 1.5 Ciss 1000 Coss Crss 100 VDD = 12 V f = 1 MHz VGS = 0 V 0.0 0 2 4 6 8 10 0.01 10 Figure 7. Gate Charge Characteristics 10 20 1 Figure 8. Capacitance vs Drain to Source Voltage 20 -1 10 VDS = 0 V -2 10 100 us 10 ID, DRAIN CURRENT (A) Ig, GATE LEAKAGE CURRENT (A) 0.1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -3 10 -4 10 TJ = 125 oC -5 10 -6 10 -7 10 TJ = 25 oC -8 1 ms 1 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 175 oC/W 10 TA = 25 oC 0.01 0.01 -9 10 10 ms THIS AREA IS LIMITED BY rDS(on) 0 3 6 9 12 15 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 10. Forward Bias Safe Operating Area Figure 9. Gate Leakage Current vs Gate to Source Voltage 300 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o RθJA = 175 C/W 100 o TA = 25 C 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2011 Fairchild Semiconductor Corporation FDME410NZT Rev.C1 4 www.fairchildsemi.com FDME410NZT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA =175 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDME410NZT Rev.C1 5 www.fairchildsemi.com FDME410NZT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDME410NZT N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDME410NZT Rev.C1 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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