FFA60UA60DN tm 60 A, 600 V Ultrafast Diode Features The FFA60UA60DN is an Ultrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping Diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. • Ultrafast Switching, trr < 90 ns • Max Forward Voltage, VF < 2.2 V • High Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Boost Diode in PFC and Switching Mode Power Supply • Welding, UPS and Motor Control Application Pin Assignments 1 1 3 2 1. Anode 2. Cathode 3. Anode TO-3P Absolute Maximum Ratings Per leg at TC=25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage Parameter Rating 600 Unit V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 30 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG @ TC = 95oC 180 Operating and Storage Temperature Range A -65 to +150 o Rating Unit C Thermal Characteristics Per leg at TC=25oC unless otherwise noted Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case o 1.3 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F60UA60DN FFA60UA60DN TO3P - - 30 ©2009 Fairchild Semiconductor Corporation FFA60UA60DN Rev. A 1 www.fairchildsemi.com FFA60UA60DN UItrafast Diode November 2009 Symbol Per leg at TC=25oC unless otherwise noted Min. Typ. Max. Unit VF 1 IF = 30 A IF = 30 A Parameter TC = 25oC TC = 125oC - - 2.2 2.0 V IR1 VR = 600 V VR = 600 V TC = 25oC TC = 125oC - - 100 150 µA trr Irr Qrr IF = 30 A, di/dt = 200 A/µs TC = 25oC - - 90 8 360 ns A nC WAVL Avalanche Energy ( L = 40 mH) 20 - - mJ Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms ©2009 Fairchild Semiconductor Corporation FFA60UA60DN Rev. A 2 FFA60UA60DN UItrafast Diode Electrical Characteristics www.fairchildsemi.com FFA60UA60DN UItrafast Diode Typical Performance Characteristics Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 10 100 o TC = 125 C TC = 125 C Reverse Current , IR [µA] Forward Current, IF [A] o 10 o TC = 25 C o TC = 75 C 1 0.1 0.0 0.5 1.0 1.5 Forward Voltage, VF [V] 200 300 400 500 Reverse Voltage, VR [V] IF = 30A Reverse Recovery Time, trr [ns] Capacitances , Cj [pF] o TC = 25 C 600 150 Typical Capacitance at 0V = 205pF 150 100 50 0 0.1 1 10 Reverse Voltage, VR [V] o TC = 125 C 120 o TC = 75 C 90 60 o TC = 25 C 30 0 100 100 200 di/dt [A/µs] 300 400 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 60 Average Forward Current, IF(AV) [A] 12 Reverse Recovery Current, Irr [A] 0.1 Figure 4. Typical Reverse Recovery Time vs. di/dt 200 o TC = 125 C 9 o TC = 75 C 6 o TC = 25 C 3 IF = 30A 0 100 o TC = 75 C 0.01 100 2.0 Figure 3.Typical Junction Capacitance 1 200 di/dt [A/µs] ©2009 Fairchild Semiconductor Corporation FFA60UA60DN Rev. A 300 50 40 30 20 10 0 25 400 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFA60UA60DN UItrafast Diode Mechanical Dimensions TO-3P Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FFA60UA60DN Rev. A 4 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 ©2009 Fairchild Semiconductor Corporation FFA60UA60DN Rev. A www.fairchildsemi.com