Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.1, 3/2011 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femto cell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA, PCS, UMTS and LTE. The amplifier is housed in a low--cost, surface mount QFN plastic package. • Typical Performance: VCC = 5 Volts, ICQ = 70 mA, Pout = 17 dBm Frequency Gps (dB) ACPR (dBc) PAE (%) Test Signal 1880 MHz 29.0 --47.4 9.1 TD--SCDMA 1920 MHz 29.0 --46.7 9.0 TD--SCDMA 2010 MHz 27.4 --52.0 9.3 TD--SCDMA 2025 MHz 26.8 --50.0 9.5 TD--SCDMA 2140 MHz 27.0 --51.7 9.4 W--CDMA 1800--2200 MHz, 27.2 dB 30.5 dBm InGaP HBT CASE 2131--01 QFN 3x3 PLASTIC Features • Active Bias Control (On--chip) • Frequency: 1800--2200 MHz • P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit) • Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit) • OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit) • Single 5 Volt Supply • Low Cost QFN Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical CW Performance (1) Characteristic Small--Signal Gain (S21) Table 2. Maximum Ratings Rating Symbol 1800 MHz 2140 MHz 2200 MHz Unit Gp 28.8 26.4 25.5 dB Input Return Loss (S11) IRL --17.6 --10.9 --9.7 dB Output Return Loss (S22) ORL --20.3 --14.7 --13.7 dB Power Output @1dB Compression P1db 30.5 30.5 30.5 dBm Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 550 mA RF Input Power Pin 14 dBm Storage Temperature Range Tstg --65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC1 = VCC2 = VCTRL = 5 Vdc, TA = 25°C, 50 ohm system, CW Application Circuit Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 86°C, VCC1 = VCC2 = VCTRL = 5 Vdc Symbol Value (3) Unit RθJC 52 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010--2011. All rights reserved. RF Device Data Freescale Semiconductor MMA20312BT1 1 Table 4. Electrical Characteristics (VCC1 = VCC2 = VCTRL = 5 Vdc, 2140 MHz, TA = 25°C, 50 ohm system, in Freescale W--CDMA Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) (1) Gp 23.6 27.2 — dB Input Return Loss (S11) IRL — --10.7 — dB Output Return Loss (S22) ORL — --15.5 — dB Power Output @ 1dB Compression, CW P1dB — 28.2 — dBm Third Order Output Intercept Point, Two--Tone CW OIP3 — 44.5 — dBm Noise Figure NF — 3.3 — dB Supply Current (1,2) ICQ 62.5 70 77 mA Supply Voltage (2) VCC — 5 — V Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 0 (Minimum), rated to 150 V Machine Model (per EIA/JESD 22--A115) A (Minimum) Charge Device Model (per JESD 22--C101) III (Minimum) Table 6. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C 1. Specified data is based on performance of soldered down part in W--CDMA application circuit. 2. For reliable operation, the junction temperature should not exceed 150°C. VBA2 VB1 VCC1 VCC1 BIAS CIRCUIT RFout VBIAS RFin VCC2 GND VBA2 VCC1 VCC1 RFout GND 12 11 10 VB1 1 9 RFout VBIAS 2 8 RFout RFin 3 7 VCC2 4 5 6 GND GND GND GND Figure 1. Functional Block Diagram Figure 2. Pin Connections MMA20312BT1 2 RF Device Data Freescale Semiconductor VCTRL R1 R2 C6 C7 12 C5 1 Z5 VCC1 C8 Z4 11 C17 C18 C19 10 9 BIAS CIRCUIT 8 2 Z2 Z3 C3 RF INPUT Z1 C4 7 3 C1 Z6 L1 C2 RF OUTPUT 4 5 VCC2 6 C13 C16 Note: Component numbers C9, C10, C11, C12, C14, and C15 are not used. Z1 Z2 Z3 0.250″ x 0.030″ Microstrip 0.035″ x 0.030″ Microstrip 0.283″ x 0.030″ Microstrip Z4 Z5 Z6 0.080″ x 0.030″ Microstrip 0.155″ x 0.010″ Microstrip 0.045″ x 0.010″ Microstrip Figure 3. MMA20312BT1 Test Circuit Schematic -- TD--SCDMA Table 7. MMA20312BT1 Test Circuit Component Designations and Values -- TD--SCDMA Part Description Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C13 10 pF Chip Capacitors 06035J100GBS AVX C8, C18 1 μF Chip Capacitors GRM188R61A105KA61 Murata C16, C19 10 μF Chip Capacitors GRM188R60J106ME47 Murata C17 0.1 μF Chip Capacitor GRM188R71H104KA93 Murata L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO R1 120 Ω Chip Resistor RR0816Q--121--D Susumu R2 1300 Ω Chip Resistor RR0816Q--132--D Susumu PCB 0.014″, εr = 3.7 FR408 ISOLA MMA20312BT1 RF Device Data Freescale Semiconductor 3 VCC1 VBIAS C8 C19 R1 R2 C7 C17 C18 C6 RFIN RFOUT C5 C1 C2 L1 C3 C4 C13 C16 QFN 3x3--12B Rev. 0 VCC2 Note: Component numbers C9, C10, C11, C12, C14, and C15 are not used. Figure 4. MMA20312BT1 Test Circuit Component Layout -- TD--SCDMA Table 7. MMA20312BT1 Test Circuit Component Designations and Values -- TD--SCDMA Part Description Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C13 10 pF Chip Capacitors 06035J100GBS AVX C8, C18 1 μF Chip Capacitors GRM188R61A105KA61 Murata C16, C19 10 μF Chip Capacitors GRM188R60J106ME47 Murata C17 0.1 μF Chip Capacitor GRM188R71H104KA93 Murata L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO R1 120 Ω Chip Resistor RR0816Q--121--D Susumu R2 1300 Ω Chip Resistor RR0816Q--132--D Susumu PCB 0.014″, εr = 3.7 FR408 ISOLA (Component Designations and Values table repeated for reference.) MMA20312BT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — TD--SCDMA 0 35 --5 30 --40°C 25 --15 S21 (dB) S11 (dB) --10 85°C --20 25°C --25 85°C 25°C 20 15 10 --30 --35 1500 --40°C 5 VCC1 = VCC2 = VCTRL = 5 Vdc 1750 2000 2250 2500 0 1500 2750 VCC1 = VCC2 = VCTRL = 5 Vdc 1750 2000 2250 2500 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency versus Temperature Figure 6. S21 versus Frequency versus Temperature 2750 0 --5 --40°C S22 (dB) --10 85°C --15 25°C --20 --25 --30 --35 1500 VCC1 = VCC2 = VCTRL = 5 Vdc 1750 2000 2250 2500 2750 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency versus Temperature MMA20312BT1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — TD--SCDMA 200 VCC1 = VCC2 = VCTRL = 5 Vdc f = 2017.5 MHz --15 --20 180 160 140 ACPR (dBc) --25 25°C --30 --35 ICC --40 120 85°C --45 --50 ACPR 80 60 85°C --40°C 40 --55 --60 100 --40°C 20 25°C 7 9 11 13 15 17 19 21 ICC, COLLECTOR CURRENT (mA) --10 0 23 Pout, OUTPUT POWER (dBm) Figure 8. ACPR versus Collector Current versus Output Power versus Temperature 29 Gain 45 --40°C 40 Gps, POWER GAIN (dB) 28 27 35 25°C 26 25 30 25 85°C 24 VCC1 = VCC2 = VCTRL = 5 Vdc f = 2017.5 MHz 23 20 --40°C 15 85°C 22 PAE 21 10 5 25°C 20 7 9 11 13 15 17 19 21 PAE, POWER ADDED EFFICIENCY (%) 50 30 0 23 Pout, OUTPUT POWER (dBm) P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 9. Power Gain versus Power Added Efficiency versus Output Power versus Temperature 31 VCC1 = VCC2 = VCTRL = 5 Vdc 30 29 --40°C 28 25°C 27 85°C 26 25 24 1800 1850 1900 1950 2000 2050 f, FREQUENCY (MHz) Figure 10. P1dB versus Frequency versus Temperature, CW MMA20312BT1 6 RF Device Data Freescale Semiconductor VCTRL R1 R2 C6 C7 12 C5 1 Z5 VCC1 C8 Z4 11 C9 C17 C18 C19 10 9 BIAS CIRCUIT 2 8 Z2 Z3 C3 RF INPUT Z1 3 C4 7 C1 Z6 L1 C2 RF OUTPUT 4 5 VCC2 6 C13 C16 Note: Component numbers C10, C11, C12, C14, and C15 are not used. Z1 Z2 Z3 0.218″ x 0.030″ Microstrip 0.068″ x 0.030″ Microstrip + 0.250″ x 0.030″ Microstrip Z4 Z5 Z6 0.080″ x 0.030″ Microstrip 0.155″ x 0.010″ Microstrip 0.045″ x 0.010″ Microstrip Figure 11. MMA20312BT1 Test Circuit Schematic -- W--CDMA Table 8. MMA20312BT1 Test Circuit Component Designations and Values -- W--CDMA Part Description Part Number Manufacturer C1, C5, C9 22 pF Chip Capacitors 06033J220GBS AVX C2, C3 1.8 pF Chip Capacitors 06035J1R8BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C13 10 pF Chip Capacitors 06035J100GBS AVX C8, C18 1 μF Chip Capacitors GRM188R61A105KA61 Murata C16, C19 10 μF Chip Capacitors GRM188R60J106ME47 Murata C17 0.1 μF Chip Capacitor GRM188R71H104KA93 Murata L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO R1 120 Ω Chip Resistor RR0816Q--121--D Susumu R2 1500 Ω Chip Resistor RR0816Q--152−D Susumu PCB 0.014″, εr = 3.7 FR408 ISOLA MMA20312BT1 RF Device Data Freescale Semiconductor 7 VCC1 VBIAS C8 R1 C19 R2 C7 C9 C17 C18 C6 RFIN RFOUT C5 C1 C2 L1 C3 C4 C13 C16 QFN 3x3--12B Rev. 0 VCC2 Note: Component numbers C10, C11, C12, C14, and C15 are not used. Figure 12. MMA20312BT1 Test Circuit Component Layout -- W--CDMA Table 8. MMA20312BT1 Test Circuit Component Designations and Values -- W--CDMA Part Description Part Number Manufacturer C1, C5, C9 22 pF Chip Capacitors 06033J220GBS AVX C2, C3 1.8 pF Chip Capacitors 06035J1R8BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C13 10 pF Chip Capacitors 06035J100GBS AVX C8, C18 1 μF Chip Capacitors GRM188R61A105KA61 Murata C16, C19 10 μF Chip Capacitors GRM188R60J106ME47 Murata C17 0.1 μF Chip Capacitor GRM188R71H104KA93 Murata L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO R1 120 Ω Chip Resistor RR0816Q--121--D Susumu R2 1500 Ω Chip Resistor RR0816Q--152−D Susumu PCB 0.014″, εr = 3.7 FR408 ISOLA (Component Designations and Values table repeated for reference.) MMA20312BT1 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — W--CDMA 200 VCC1 = VCC2 = VCTRL = 5 Vdc f = 2140 MHz --15 --20 180 160 140 ACPR (dBc) --25 120 --30 ICC --35 100 80 --40 --45 60 ACPR --50 40 20 --55 --60 8 10 12 14 18 16 20 22 ICC, COLLECTOR CURRENT (mA) --10 0 24 Pout, OUTPUT POWER (dBm) Figure 13. ACPR versus Collector Current versus Output Power VCC1 = VCC2 = VCTRL = 5 Vdc f = 2140 MHz 29 Gps, POWER GAIN (dB) 28 45 40 Gain 27 35 26 30 25 25 24 20 PAE 23 15 22 10 21 5 20 8 10 12 14 16 18 20 22 PAE, POWER ADDED EFFICIENCY (%) 50 30 0 24 Pout, OUTPUT POWER (dBm) P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 14. Power Gain versus Power Added Efficiency versus Output Power 31 VCC1 = VCC2 = VCTRL = 5 Vdc 30 29 28 27 26 25 24 2100 2120 2140 2160 2180 2200 f, FREQUENCY (MHz) Figure 15. P1dB versus Frequency, CW MMA20312BT1 RF Device Data Freescale Semiconductor 9 3.00 0.70 0.30 2.00 3.40 0.50 1.6 x 1.6 Solder Pad with Thermal Via Structure Figure 16. PCB Pad Layout for QFN 3x3 MA01 YWZ Figure 17. Product Marking MMA20312BT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMA20312BT1 RF Device Data Freescale Semiconductor 11 MMA20312BT1 12 RF Device Data Freescale Semiconductor MMA20312BT1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Oct. 2010 • Initial Release of Data Sheet 1 Mar. 2011 • Added “OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)” to Features list, p. 1 • Typical CW Performance table: removed OIP3, p. 1 • Figs. 4 and 12, Test Circuit Component Layout, updated component part layout identifier to reflect package type. Changed from MMA20312B to QFN 3x3--12B, p. 4, 8 1.1 Mar. 2011 • Updated device descriptor box to reflect W--CDMA application circuit small--signal gain value, p. 1 MMA20312BT1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010--2011. All rights reserved. MMA20312BT1 Document Number: RF Device Data MMA20312B Rev. 1.1, 3/2011 Freescale Semiconductor 15