TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP105/106/107 Equivalent Circuit C B TO-220 1 R1 1.Base 2.Collector Absolute Maximum Ratings* Symbol VCBO VCEO 3.Emitter R1 @ 10k W R2 @ 0.6kW R2 E T a = 25°C unless otherwise noted Collector-Base Voltage Parameter : TIP100 : TIP101 : TIP102 Collector-Emitter Voltage : TIP100 : TIP101 : TIP102 Ratings 60 80 100 Units V V V 60 80 100 V V V V VEBO Emitter-Base Voltage 5 IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 1 A PC Collector Dissipation (Ta=25°C) 2 W 80 W TJ Collector Dissipation (TC=25°C) Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. © 2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 www.fairchildsemi.com 1 TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor October 2008 Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP100 : TIP101 : TIP102 Test Condition ICEO Collector Cut-off Current ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE DC Current Gain VCE = 4V, IC = 3A VCE = 4V, IC = 8A VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA IC = 8A, IB = 80mA VBE(on) Base-Emitter On Voltage VCE = 4V, IC = 8A 2.8 V Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF IC = 30mA, IB = 0 Min. Typ. Max. 60 80 100 Units V V V : TIP100 : TIP101 : TIP102 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 50 50 50 mA mA mA : TIP100 : TIP101 : TIP102 VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 100V, IE = 0 50 50 50 mA mA mA 2 mA 1000 200 20000 2 2.5 V V * Pulse Test: Pulse Width£300ms, Duty Cycle£2% © 2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 www.fairchildsemi.com 2 TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor Electrical Characteristics* Ta=25°C unless otherwise noted 5 mA A 700 600m 0.9mA 0.8mA 4 10k VCE = 4V A 500m A 400m hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 1mA IB = 300mA 3 IB = 200mA 2 1 1k IB = 100mA 0 0 1 2 3 4 100 0.1 5 1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain 10k 10k IC = 500 IB Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic VBE(sat) 1k VCE(sat) 100 0.1 1 10 1k 100 10 1 0.1 100 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 120 100 100 s 0m 10 PC[W], POWER DISSIPATION 1ms 10 DC s 5m IC[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT 1 TIP100 0.1 TIP101 80 60 40 20 TIP102 0 0.01 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating © 2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 0 www.fairchildsemi.com 3 TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor Typical Characteristics TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor Mechanical Dimensions TO220 © 2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 www.fairchildsemi.com 4 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. A1 www.fairchildsemi.com 5 TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor TRADEMARKS