FREESCALE MRF18030BSR3

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by MRF18030B/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1930 – 1990 MHz.
• Typical GSM Performance:
Power Gain – 14 dB (Typ) @ 30 Watts
Efficiency – 50% (Typ) @ 30 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm,
13 inch Reel.
GSM/GSM EDGE 1.93 – 1.99 GHz,
30 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–03, STYLE 1
NI–400
MRF18030BR3
CASE 465F–03, STYLE 1
NI–400S
MRF18030BSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
2.1
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF18030BR3 MRF18030BSR3
1
ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
2
3.9
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Crss
—
1.3
—
pF
Output Power, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz)
P1dB
27
30
—
Watts
Common–Source Amplifier Power Gain @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz)
Gps
13
14
—
dB
Drain Efficiency @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz)
η
46.5
50
—
%
Input Return Loss @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz)
IRL
—
–12
–9
dB
Output Mismatch Stress @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f1 = 1930 – 1990 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µAdc)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture) (2)
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) Device specifications obtained on a Production Test Fixture.
MRF18030BR3 MRF18030BSR3
2
MOTOROLA RF DEVICE DATA
C1
C2
C3
C4, C5
C6, C7, C8
C9
R1
R2, R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
1.8 pF, 100B Chip Capacitor
0.8 pF, 100B Chip Capacitor
0.8 pF, 100B Chip Capacitor
1.2 pF, 100B Chip Capacitors
8.2 pF, 100B Chip Capacitors
220 mF, 63 V Electrolytic Capacitor
1.0 kΩ, 1/8 W Chip Resistor (0805)
10 kΩ, 1/8 W Chip Resistors (0805)
0.496″ x 0.087″ Microstrip
1.022″ x 0.087″ Microstrip
0.257″ x 0.633″ Microstrip
0.189″ x 0.394″ Microstrip
0.335″ x 0.394″ Microstrip
0.616″ x 0.087″ Microstrip
0.845″ x 0.087″ Microstrip
0.366″ x 0.087″ Microstrip
≈0.500″ x 0.087″ Microstrip
Figure 1. 1930 – 1990 MHz Test Fixture Schematic
!
CUTOUT AREA
"#$%&'
MRF18030B
"&(()*'
Figure 2. 1930 – 1990 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18030BR3 MRF18030BSR3
3
.
(& 1 . 2
/
.
/
1 . 2
.
.
/.
1 2
3 4
5 3 . 6
3 _
/
..
.
.
2
.
3 4
5 3 . 6
3 _
.; 2
.
.; 2
/.
..
...
$ 3 2
.
.
..
.
Figure 3. Wideband Gain and IRL at 30 W and
15 W Output Power
5 3 .. 6
.. 6
(& -++2,++"'
(& -++2,++"'
...
..
.. 6
.. 6
3 4
7 3 . 89:
3 _
.;
3 4
5 3 . 6
7 3 . 89:
.
.;
..
..
.
<- 2, "2'
<- 2, "2'
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
(& -++2,++"'
. 5 3 . 6
7 3 . 89:
3 _
_
_
.
3 _
(& -++2,++"'
.
.
.
Figure 4. Output Power versus Frequency
.
.
7- ,5,! "89:'
7- ,5,! "89:'
3 <- 2, "2'
Figure 7. Power Gain versus Output Power
MRF18030BR3 MRF18030BSR3
4
.
.
(&
.
.
h
.
..
.
.
.;
3 4
5 3 . 6
7 3 . 89:
3 _
.
η-++,,!+"='
(& -++2,++"'
/
- +,+ +"'
(& 1 2
.
< -++2,+"2'
.
.
..
<- 2, "2'
Figure 8. Power Gain and Efficiency versus
Output Power
MOTOROLA RF DEVICE DATA
$
3 Ω
7 3 . 89:
7 3 . 89:
D
7 3 . 89:
7 3 . 89:
3 - 5 3 . 6- < 3 . 2 "2'
f
MHz
Zin
ZOL*
Ω
Zin
Ω
1710
2.92 + j8.24
4.18 + j9.06
1785
3.84 + j9.75
4.59 + j9.46
1805
4.15 + j10.38
4.98 + j9.06
1840
4.04 + j10.22
6.10 + j7.63
1880
6.12 + j12.29
5.83 + j6.89
1960
6.20 + j12.29
5.55 + j6.33
1990
8.61 + j12.10
5.93 + j6.66
2110
15.19 + j11.85
3.82 + j5.33
= Complex conjugate of the source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given power, voltage,
bias current and frequency.
Note: ZOL* was chosen based on tradeoffs between gain,
output power, and drain efficiency.
(<
8%<4>$?
@<AB
<(<
8%<4>$?
@<AB
@[email protected]
@ @&<
Z
in
Z
*
OL
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF18030BR3 MRF18030BSR3
5
NOTES
MRF18030BR3 MRF18030BSR3
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
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CASE 465E–03
ISSUE D
NI–400
MRF18030BR3
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CASE 465F–03
ISSUE B
NI–400S
MRF18030BSR3
MOTOROLA RF DEVICE DATA
MRF18030BR3 MRF18030BSR3
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF18030BR3 MRF18030BSR3
8
◊
MRF18030B/D
MOTOROLA RF DEVICE
DATA