T330P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions (L x W x H in mm): 0.67 x 0.67 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.23 • Peak sensitivity wavelength: 900 nm • High photo sensitivity • High radiant sensitivity • Suitable for visible light and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 60° DESCRIPTION T330P chip is a PIN photodiode with 0.23 mm2 sensitive area, high speed and high photo sensitivity. It is sensitive to the visible and near infrared light spectrum with a peak sensitivity at 900 nm. Anode is the bond pad on top, cathode is the backside contact. • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • High speed photo detector GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY COMPONENT T330P Ira (μA) ϕ (deg) λ0.1 (nm) 2.3 ± 60 430 to 1100 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE T330P-SD-F PACKAGING REMARKS PACKAGE FORM Wafer sawn on foil with disco frame MOQ: 55 000 pcs Chip Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 60 UNIT V Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg1 - 40 to + 100 °C Storage temperature range on foil Tstg2 - 40 to + 50 °C Rev. 1.0, 16-Jan-12 Document Number: 83490 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T330P www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 Reverse dark current Diode capacitance Reverse light current TYP. MAX. UNIT V VR = 10 V, E = 0 Iro 0.1 VR = 5 V, f = 1 MHz, E = 0 CD 1.3 pF EV = 100 lx, CIE illuminant A, VR = 5 V Ira 2.3 μA 3 nA Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 900 nm Range of spectral bandwidth λ0.1 430 to 1100 nm Rise time VR = 10 V, RL = 50 Ω, λ = 820 nm tr 4 ns Fall time VR = 10 V, RL = 50 Ω, λ = 820 nm tf 4 ns Notes • The measurements are based on samples of die which are mounted on a TO-header without resin coating BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) S(λ)rel - Relative Spectral Sensitivity CD - Diode Capacitance (pF) 8 6 E=0 f = 1 MHz 4 2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 94 8430 1 10 350 100 VR- Reverse Voltage (V) Fig. 1 - Diode Capacitance vs. Reverse Voltage 550 750 950 1150 λ - Wavelength (nm) 94 8420 Fig. 2 - Relative Spectral Sensitivity vs. Wavelength MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 0.67 Length of chip edge (y-direction) Ly 0.67 mm Sensitive area AS 0.23 mm2 Wafer diameter D Die height H Bond pad anode Rev. 1.0, 16-Jan-12 x*y mm 100 0.265 0.28 0.1 x 0.1 mm 0.295 mm mm2 Document Number: 83490 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T330P www.vishay.com Vishay Semiconductors ADDITIONAL INFORMATION Frontside metallization, anode Backside metallization, cathode Dicing Die bonding technology AlSi NiV-Ag Sawing Epoxy bonding Note • All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. Rev. 1.0, 16-Jan-12 Document Number: 83490 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000