Order this document by MRF555/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60% (Typ) 1.5 W, 470 MHz RF LOW POWER TRANSISTOR NPN SILICON • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 400 mAdc Operating Junction Temperature TJ 150 °C Total Device Dissipation @ TC = 75°C (1, 2) Derate above 75°C PD 3.0 40 Watts mW/°C Storage Temperature Range Tstg – 55 to +150 °C CASE 317D–02, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 25 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICES — — 0.1 mAdc hFE 50 90 200 — Cob — 3.5 5.0 pF OFF CHARACTERISTICS Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) NOTES: (continued) 1. TC, Case temperature measured on collector lead immediately adjacent to body of package. 2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,” discusses methods of mounting and heatsinking. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF555 1 ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Common–Emitter Power Gain (VCC = 12.5 Vdc, Pout = 1.5 W) Gpe 11 12.5 — dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 1.5 W) ηc 50 60 — % Load Mismatch Stress (VCC = 15.5 Vdc, Pin = 125 mW, VSWR ≥ 10:1 all phase angles) ψ Characteristic FUNCTIONAL TESTS (f = 470 MHz) No Degradation in Output Power L5 + + B C8 B VCC C9 – C7 L1 L4 C5 L3 RF POWER INPUT Z1 RF POWER OUTPUT Z3 L2 Z2 D.U.T. C4 C1 C2 C6 C3 L1 — 5 Turns #21 AWG, 5/32″ I.D. L2, L3 — 60 x 125 x 250 Mils Copper Pad on 27 Mil Thick L2, L3 — Alumina Substrate L4, L5 — 7 Turns #21 AWG 5/32″ I.D. Z1 — 1.29″ x 0.16″ Microstrip Z2 — 0.70″ x 0.16″ Microstrip Z3 — 2.18″ x 0.16″ Microstrip *C1, C3, C6 — 0.8 – 11 pF Johanson C2 — 15 pF Clamped Mica, Mini–Underwood C4 — 36 pF Clamped Mica, Mini–Underwood C5 — 470 pF Ceramic Chip Capacitor C7 — 91 pF Clamped Mica, Mini–Underwood C8 — 68 pF Clamped Mica, Mini–Underwood C9 — 1.0 µF, 25 V Tantalum B — Bead, Ferroxcube 56–590–65/3B PCB — 1/16″ Glass Teflon, 1 oz. cu. clad, PCB — double sided, εr = 2.5 *Fixed tuned for broadband response Figure 1. 400 – 512 MHz Broadband Circuit 20 Gpe 12 65 ηc 60 55 8 IRL 4 10 15 0 400 20 425 450 475 f, FREQUENCY (MHz) 500 525 IRL, INPUT RETURN LOSS (dB) G pe , POWER GAIN (dB) 16 η c , COLLECTOR EFFICIENCY % Pout = 1.5 W VCC = 12.5 Vdc Figure 2. Performance in Broadband Circuit MRF555 2 MOTOROLA RF DEVICE DATA Zin Ohms VCC = 7.5 V ZOL* Ohms VCC = 12.5 V VCC = 7.5 V VCC = 12.5 V Pout 400 MHz = 1.9 W Pout 450 MHz = 1.45 W Pout 512 MHz = 0.9 W f Frequency MHz Pin = 100 mW Pin = 50 mW Pout 400 MHz = 1.5 W Pout 450 MHz = 1.35 W Pout 512 MHz = 1.05 W 400 2.9 – j2.7 1.9 – j3.1 18.0 – j13.4 12.2 – j19.7 450 2.2 – j0.8 2.6 – j4.0 21.6 = j9.9 20.2 – j18.6 512 3.5 – j1.2 2.6 – j2.6 20.1 – j1.0 23.4 – j23.0 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power MOTOROLA RF DEVICE DATA MRF555 3 2.5 VCC = 7.5 Vdc VCC = 12.5 Vdc 2 Pout , POWER OUTPUT (W) Pout , POWER OUTPUT (W) 2.5 1.5 7.5 Vdc 1 0.5 0 2 Pin = 150 mW 1.5 100 mW 1 50 mW 0.5 0 50 100 Pin, POWER INPUT (mW) 150 0 400 200 Figure 3. Power Output versus Power Input 425 450 475 f, FREQUENCY (MHz) 4 VCC = 12.5 Vdc Pin = 150 mW Pout , POWER OUTPUT (W) Pout , POWER OUTPUT (W) 525 Figure 4. Power Output versus Frequency 4 3 Pin = 150 mW 2 100 mW 50 mW 1 0 400 f = 400 MHz 3 100 mW 2 50 mW 1 0 425 450 475 f, FREQUENCY (MHz) 500 525 6 Figure 5. Power Output versus Frequency 8 10 12 VCC, SUPPLY VOLTAGE (Vdc) 14 16 Figure 6. Power Output versus Supply Voltage 4 4 f = 450 MHz Pout , POWER OUTPUT (W) Pout , POWER OUTPUT (W) 500 Pin = 150 mW 3 100 mW 2 50 mW 1 0 f = 512 MHz 3 Pin = 150 mW 2 100 mW 50 mW 1 0 6 8 10 12 VCC, SUPPLY VOLTAGE (Vdc) 14 Figure 7. Power Output versus Supply Voltage MRF555 4 16 6 8 10 12 VCC, SUPPLY VOLTAGE (Vdc) 14 16 Figure 8. Power Output versus Supply Voltage MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F H R 1 A 4 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION N AND R. 3 D K N T SEATING PLANE C DIM A C D F H J K N R T INCHES MIN MAX 0.175 0.205 0.075 0.100 0.033 0.039 0.097 0.104 0.348 0.383 0.008 0.012 0.285 0.320 ––– 0.065 ––– 0.128 0.025 0.040 MILLIMETERS MIN MAX 4.45 5.20 1.91 2.54 0.84 0.99 2.46 2.64 8.84 9.72 0.24 0.30 7.24 8.12 ––– 1.65 ––– 3.25 0.64 1.01 J STYLE 2: PIN 1. 2. 3. 4. COLLECTOR EMITTER BASE EMITTER CASE 317D–02 ISSUE C MOTOROLA RF DEVICE DATA MRF555 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF555 6 ◊ *MRF555/D* MRF555/D MOTOROLA RF DEVICE DATA