Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications. • Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S21045NR1 MRF5S21045NBR1 2110-2170 MHz, 10 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF5S21045NR1 CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF5S21045NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +68 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 130 0.74 W W/°C Storage Temperature Range Tstg -65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 45 W CW Case Temperature 79°C, 10 W CW °C/W RθJC 1.35 1.48 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor MRF5S21045NR1 MRF5S21045NBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 120 μAdc) VGS(th) 2 — 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 2 3.8 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.2 Adc) VDS(on) 0.2 — 0.35 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1.2 Adc) gfs — 3.2 — S Crss — 0.9 — pF Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13.5 14.5 16.5 dB Drain Efficiency ηD 24 25.5 — % Intermodulation Distortion IM3 — -37 -35 dBc ACPR — -39 -37 dBc IRL — -12 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF5S21045NR1 MRF5S21045NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS VSUPPLY R2 C1 C2 C4 C5 Z11 Z10 Z6 + C6 C3 Z13 R3 RF INPUT Z1 Z2 Z3 Z4 Z5 Z7 Z12 C7 Z9 C12 C8 DUT C9 C10 Z8 RF OUTPUT C11 C13 C14 Z1, Z9 Z2 Z3 Z4 Z5 Z6 0.250″ x 0.080″ Microstrip 0.987″ x 0.080″ Microstrip 0.157″ x 0.080″ Microstrip 0.375″ x 0.080″ Microstrip 0.480″ x 1.000″ Microstrip 0.510″ x 0.080″ Microstrip Z7 Z8, Z13 Z10 Z11 Z12 PCB C15 0.500″ x 1.000″ Microstrip 0.270″ x 0.080″ Microstrip 0.789″ x 0.080″ Microstrip 0.527″ x 0.080″ Microstrip 0.179″ x 0.080″ Microstrip Taconic TLX8-0300, 0.030″, εr = 2.55 Figure 1. MRF5S21045NR1(NBR1) Test Circuit Schematic Table 6. MRF5S21045NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 220 nF Chip Capacitor (1812) 1812Y224KAT AVX C2, C3, C7, C12, C13 6.8 pF 100B Chip Capacitors ATC100B6R8CT500XT ATC C4, C5, C14, C15 6.8 μF Chip Capacitors (1812) C4532X5R1H685MT TDK C6 220 μF, 63 V Electrolytic Capacitor, Radial 2222-136-68221 Vishay C8, C10 1 pF 100B Chip Capacitors ATC100B1R0BT500XT ATC C9 1.5 pF 100B Chip Capacitor ATC100B1R5BT500XT ATC C11 0.5 pF 100B Chip Capacitor ATC100B0R5BT500XT ATC R1, R2 10 kW, 1/4 W Chip Resistors CRCW12061002FKEA Vishay R3 10 W, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 3 C1 C2 C4 C5 R1 C3 R2 C6 R3 C8 C9 CUT OUT AREA C7 C10 C11 C12 C13 C14 C15 MRF5S21045N Rev. 0 Figure 2. MRF5S21045NR1(NBR1) Test Circuit Component Layout MRF5S21045NR1 MRF5S21045NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 24 Gps, POWER GAIN (dB) 14.8 14.6 VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 14.4 14.2 IRL 14 20 16 -28 -32 13.8 -36 IM3 13.6 -40 ACPR 13.4 2060 2080 2100 2120 2140 2160 2180 2200 -44 2220 -10 -13 -16 -19 -22 IRL, INPUT RETURN LOSS (dB) 28 IM3 (dBc), ACPR (dBc) ηD 15 ηD, DRAIN EFFICIENCY (%) 32 15.2 f, FREQUENCY (MHz) 46 14.6 42 Gps, POWER GAIN (dB) 14.2 Gps 14 13.8 38 VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 500 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IRL 13.6 34 30 -18 -22 -26 13.4 IM3 13.2 -30 ACPR 13 2060 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 -34 2220 IM3 (dBc), ACPR (dBc) ηD 14.4 -8 -1 1 -14 -17 -20 IRL, INPUT RETURN LOSS (dB) 14.8 ηD, DRAIN EFFICIENCY (%) Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 10 Watts Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 20 Watts 17 IDQ = 800 mA 16 Gps, POWER GAIN (dB) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -1 0 650 mA 15 500 mA 14 350 mA 200 mA 13 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements 12 11 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two-T one Power Gain versus Output Power -2 0 IDQ = 200 mA -3 0 800 mA -40 650 mA 500 mA -5 0 350 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements -60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 54 -3 5 -4 0 5th Order -4 5 7th Order -5 0 VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz -5 5 1 52 50 P1dB = 47.60 dBm (57.5 W) 46 VDD = 28 Vdc, IDQ = 500 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 42 28 100 10 30 32 TWO-T ONE SPACING (MHz) 20 16 -20 85_C -30 25_C ACPR -30 _C TC = -30_C Gps -40 25_C 85_C 10 IM3 (dBc), ACPR (dBc) 30 17 -10 -30 _C 85_C IM3 85_C 25_C -30 _C ηD 36 38 40 Figure 8. Pulse CW Output Power versus Input Power Gps, POWER GAIN (dB) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 25_C -30 _C 34 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Actual 48 44 -60 0.1 Ideal P3dB = 48.17 dBm (65.6 W) 3rd Order 60 25_C TC = -30_C 50 85_C 15 25_C 40 14 85_C 30 13 VDD = 28 Vdc IDQ = 500 mA f = 2140 MHz 12 20 ηD, DRAIN EFFICIENCY (%) -3 0 Pout, OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) -2 5 10 -50 0 1 10 11 0.1 100 1 10 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) CW Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 10. Power Gain and Drain Efficiency versus CW Output Power 0 100 16 Gps, POWER GAIN (dB) 14 32 V 12 28 V 24 V 10 20 V 8 16 V IDQ = 500 mA f = 2140 MHz VDD = 12 V 6 0 10 20 30 40 50 60 70 80 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power MRF5S21045NR1 MRF5S21045NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS x AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature W-CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 0 -10 1 (dB) PROBABILITY (%) 10 0.1 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ $5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ $10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.01 -50 4 6 -70 -ACPR in 3.84 MHz BW -IM3 in 3.84 MHz BW -80 -25 -2 0 -60 0.0001 2 -30 -40 0.001 0 -20 8 10 PEAK-T O-A VERAGE (dB) Figure 13. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test Signal -15 -10 -5 +ACPR in 3.84 MHz BW 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2‐Carrier W‐CDMA Spectrum MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω f = 2200 MHz f = 2000 MHz Zsource Zload f = 2000 MHz f = 2200 MHz VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg. f MHz Zsource Ω Zload Ω 2000 8.15 - j5.91 4.78 - j5.19 2110 7.07 - j7.32 4.04 - j4.14 2140 6.28 - j7.71 3.81 - j3.69 2170 5.61 - j7.85 3.69 - j3.39 2200 4.92 - j7.85 3.57 - j3.11 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF5S21045NR1 MRF5S21045NBR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 9 MRF5S21045NR1 MRF5S21045NBR1 10 RF Device Data Freescale Semiconductor MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 11 MRF5S21045NR1 MRF5S21045NBR1 12 RF Device Data Freescale Semiconductor MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 13 MRF5S21045NR1 MRF5S21045NBR1 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 4 Oct. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p. 9-11. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 12-14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History, p. 15 4.1 Dec. 2009 • Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change Notification number, PCN12779, p. 2 MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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