Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 5, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 22 Watts Avg., f = 1987 MHz, IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16.1 dB Drain Efficiency — 28% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1930- 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S19100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S19100HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 77°C, 22 W CW RθJC 0.44 0.50 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2004 - 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6S19100HR3 MRF6S19100HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 3A (Minimum) Machine Model (per EIA/JESD22 - A115) B (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 1.5 — pF Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg., f = 1987 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 15 16.1 18 dB Drain Efficiency ηD 26 28 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 15 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S19100HR3 MRF6S19100HSR3 2 RF Device Data Freescale Semiconductor B1 VBIAS Z1 + + + C8 C9 C10 C11 C12 + R2 RF INPUT C7 + Z2 C5 Z3 Z7 C4 R1 Z4 Z5 Z8 Z9 Z10 Z11 VSUPPLY RF OUTPUT C6 Z6 C3 C1 Z1 Z2 Z3 Z4 Z5 Z6 DUT C2 0.130″ x 0.084″ Microstrip 0.360″ x 0.084″ Microstrip 0.260″ x 0.084″ Microstrip 0.950″ x 0.084″ Microstrip 0.457″ x 0.940″ Microstrip 0.083″ x 0.940″ Microstrip Z7 Z8 Z9 Z10 Z11 PCB 0.091″ x 0.900″ Microstrip 0.493″ x 0.900″ Microstrip 0.440″ x 0.195″ Microstrip 0.470″ x 0.084″ Microstrip 0.735″ x 0.084″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 RF Bead 2743019447 Fair - Rite C1, C2 0.6 - 4.5 pF Variable Capacitors, Gigatronics 27271SL Johanson Dielectrics C3 15 pF Chip Capacitor ATC100B150CT500XT ATC C4, C7 5.6 pF Chip Capacitors ATC100B5R6JT500XT ATC C5 1 μF, 50 V Tantalum Chip Capacitor T491C105K050AT Kemet C6 43 pF Chip Capacitor ATC100B430CT500XT ATC C8, C10 22 μF, 35 V Tantalum Chip Capacitors T491X226K035AT Kemet C9 10 μF, 35 V Tantalum Chip Capacitor T491C106K035AT Kemet C11 0.1 μF Chip Capacitor C1825C14J5RAC Kemet C12 100 μF, 50 V Electrolytic Capacitor MCHT101M1HB- 1017 - RH Multicomp R1 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay R2 2 kW, 1/4 W Chip Resistor CRCW12062001FKEA Vishay MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 3 C8 C9 B1 VGG R2 C7 C5 C2 C1 1 C4 C12 C3 + VDD - C10 C6 CUT OUT AREA C1 R1 MRF6S19100H/HS Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout MRF6S19100HR3 MRF6S19100HSR3 4 RF Device Data Freescale Semiconductor Gps, POWER GAIN (dB) 16.4 27 Gps 16.2 25 16 IM3 15.8 IRL 15.6 VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 900 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing −35 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) −41 −47 ACPR 15.4 1930 1940 1960 1950 1970 −53 1990 1980 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) 29 ηD IM3 (dBc), ACPR (dBc) 16.6 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 42 ηD 40 15.8 15.6 Gps IM3 15.4 15.2 15 14.8 1930 38 VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 900 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing −25 −30 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) IRL −35 ACPR −40 1940 1960 1950 −45 1990 1980 1970 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 16 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) 16.2 ηD, DRAIN EFFICIENCY (%) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg. f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 44 Watts Avg. −15 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 18 IDQ = 1300 mA Gps, POWER GAIN (dB) 17 1125 mA 16 900 mA 675 mA 15 450 mA 14 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing 13 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 −25 −30 IDQ = 450 mA 675 mA −35 −40 1300 mA −45 1125 mA 900 mA −50 −55 1 10 100 300 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 5 0 55 Pout, OUTPUT POWER (dBm) −10 56 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 900 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz −20 −30 3rd Order −40 5th Order −50 7th Order P3dB = 51.56 dBm (143.2 W) 1 53 P1dB = 50.9 dBm (124.2 W) 52 Actual 51 50 49 48 46 30 100 10 Ideal 54 47 −60 0.1 31 32 33 34 VDD = 28 Vdc, IDQ = 900 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 35 36 37 38 39 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power 60 VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 50 40 −10 ηD IM3 −20 −30 ACPR 30 −40 20 −50 Gps 10 0 10 4 100 40 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −60 −70 200 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 70 18 16 60 16.5 15 50 14 40 17 30 12 20 ηD VDD = 28 Vdc IDQ = 900 mA f = 1960 MHz 11 10 3 10 100 10 0 200 Gps, POWER GAIN (dB) 13 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) Gps 15 VDD = 32 V 13.5 28 V 12 24 V 10.5 9 IDQ = 900 mA f = 1960 MHz 7.5 6 0 25 50 75 100 125 150 175 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power 200 MRF6S19100HR3 MRF6S19100HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 22 W Avg., and ηD = 28%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 0 1.2288 MHz Channel BW −10 −20 1 −IM3 in 1.2288 MHz Integrated BW −30 +IM3 in 1.2288 MHz Integrated BW −40 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) 10 −50 −60 −70 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 0.0001 0 2 4 6 8 10 −90 PEAK−TO−AVERAGE (dB) Figure 13. 2 - Carrier CCDF N - CDMA −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 7 f = 1990 MHz Zload f = 1930 MHz f = 1990 MHz Zsource Zo = 5 Ω f = 1930 MHz VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg. f MHz Zsource Ω Zload Ω 1930 1.57 - j3.50 2.26 - j2.31 1960 1.83 - j3.29 2.22 - j2.13 1990 2.34 - j3.71 2.14 - j2.00 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19100HR3 MRF6S19100HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M R (INSULATOR) bbb N M T A B M M M ccc M T A M aaa M T A M ccc H (LID) B S (LID) M T A B M DIM A B C D E F G H K M N Q R S aaa bbb ccc M (INSULATOR) B M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF6S19100HR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N ccc M R (LID) M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF6S19100HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 5 Dec. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 MRF6S19100HR3 MRF6S19100HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004 - 2006, 2008. All rights reserved. MRF6S19100HR3 MRF6S19100HSR3 Document RF DeviceNumber: Data MRF6S19100H Rev. 5, 12/2008 Freescale Semiconductor 11