FREESCALE MRF6S21050LSR3

Freescale Semiconductor
Technical Data
Document Number: MRF6S21050L
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S21050LR3
MRF6S21050LSR3
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA,
Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.7%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
2110 - 2170 MHz, 11.5 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF6S21050LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF6S21050LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +68
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
151
0.86
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 50 W CW
Case Temperature 76°C, 12 W CW
RθJC
Unit
°C/W
1.16
1.28
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 450 mAdc)
VGS(Q)
2
2.9
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1.1 Adc)
VDS(on)
—
0.21
0.3
Vdc
gfs
—
5.3
—
S
Crss
—
0.75
—
pF
Characteristic
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
15
16
Drain Efficiency
ηD
26
27.7
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 40
- 38
dBc
IRL
—
- 15
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
18
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally matched both on input and output.
MRF6S21050LR3 MRF6S21050LSR3
2
RF Device Data
Freescale Semiconductor
B1
R1
VBIAS
VSUPPLY
+
C7
+
C6
C5
C4
C3
C8
Z6
RF
INPUT
Z1
Z2
Z3
Z4
Z8
C10
C11
Z9
Z10
+
C13
+
C14
RF
OUTPUT
C2
Z5
C1
Z1, Z10
Z2
Z3
Z4
Z5
Z7
C9
+
C12
DUT
0.750″ x 0.084″ Microstrip
0.905″ x 0.084″ Microstrip
0.435″ x 0.173″ Microstrip
0.073″ x 0.333″ Microstrip
0.070″ x 0.333″ Microstrip
Z6
Z7
Z8
Z9
PCB
0.113″ x 0.590″ Microstrip
0.325″ x 0.590″ Microstrip
0.214″ x 0.150″ Microstrip
0.723″ x 0.084″ Microstrip
Arlon GX - 0300- 5022, 0.030″, εr = 2.5
Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic
Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Bead, Surface Mount
2743019447
Fair- Rite
C1, C2, C3, C8
6.8 pF Chip Capacitors
100B6R8CP500X
ATC
C4
0.01 μF Chip Capacitor (1825)
C1825C103J1RAC
Kemet
C5, C11
2.2 μF, 50 V Chip Capacitors (1825)
C1825C225J5RAC
Kemet
C6
22 μF, 25 V Tantalum Capacitor
ECS - T1ED226R
Panasonic TE Series
C7
47 μF, 16 V Tantalum Capacitor
T491D476K016AS
Kemet
C9, C10
10 μF, 50 V Chip Capacitors (2220)
GRM55DR61H106KA88B
Murata
C12
47 μF, 50 V Electrolytic Capacitor
MVK50VC47RM8X10TP
Nippon
C13, C14
220 μF, 50 V Electrolytic Capacitors
MVY50VC221MJ10TP
Nippon
R1
3.3 W, 1/4 W Chip Resistor (1210)
ERJ - 14YJ3R3U
Dale/Vishay
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
3
C11
C10
C12
C13
C3
B1
C8
R1
C9
C4, C5*
C7
C6
C14
CUT OUT AREA
C1
C2
MRF6S21050L Rev. 1
* C4 on bottom, C5 on top.
Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout
MRF6S21050LR3 MRF6S21050LSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16.3
26
VDD = 28 Vdc, Pout = 11.5 W (Avg.)
16.1 I = 450 mA, 2−Carrier W−CDMA
DQ
16 10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
15.9 Probability (CCDF)
Gps
−32
IRL
−34
−36
IM3
15.6
15.5
24
22
15.8
15.7
28
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
16.2
30
−38
−40
ACPR
15.4
−42
2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200
−10
−20
−30
−40
−50
−60
IRL, INPUT RETURN LOSS (dB)
ηD
ηD, DRAIN
EFFICIENCY (%)
16.4
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 11.5 Watts
41
15.9
15.7
15.6
15.5
40
39
VDD = 28 Vdc, Pout = 23 W (Avg.)
IDQ = 450 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
38
Gps
37
−24
15.4
−26
15.3
−28
15.2
IRL
IM3
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
15.8
−30
−32
ACPR
15
−34
2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200
15.1
−10
−15
−20
−25
−30
−35
IRL, INPUT RETURN LOSS (dB)
ηD
ηD, DRAIN
EFFICIENCY (%)
16
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 23 Watts
17.5
17
Gps, POWER GAIN (dB)
560 mA
16.5
450 mA
16
15.5
335 mA
15
14.5
VDD = 28 Vdc, f1 = 2135 MHz
f2 = 2145 MHz, Two−Tone
Measurements, 10 MHz Tone Spacing
225 mA
14
13.5
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
IDQ = 675 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
675 mA
−30
IDQ = 225 mA
−40
335 mA
−50
560 mA
450 mA
−60
0.1
1
10
100
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
5
−10
52
VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 450 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
3rd Order
−30
5th Order
−40
7th Order
−50
50
P1dB = 47.89 dBm (61.52 W)
49
Actual
48
47
46
VDD = 28 Vdc, IDQ = 450 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
45
−60
0.01
1
0.1
44
28
100
10
Ideal
P3dB = 48.66 dBm (73.43 W)
51
Pout, OUTPUT POWER (dBm)
−20
29
30
31
32
33
35
34
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
40
35
30
36
−20
VDD = 28 Vdc, IDQ = 450 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
IM3
−25
−30
−35
25
ACPR
20
−40
Gps
15
−45
10
−50
−55
ηD
5
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
0
−60
0.2
10
1
30
Pout, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
16.5
48
15
40
14.5
32
24
14
13.5
VDD = 28 Vdc
IDQ = 450 mA
f = 2140 MHz
ηD
16
8
10
15.5
15
14.5
14
13.5
16 V
13
13
3
16
Gps, POWER GAIN (dB)
15.5
IDQ = 450 mA
f = 2140 MHz
16.5
56
Gps
ηD, DRAIN EFFICIENCY (%)
16
Gps, POWER GAIN (dB)
17
64
100
12.5
20 V
32 V
28 V
24 V
VDD = 12 V
12
0
10
20
30
40
50
60
70
80
90
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
100
MRF6S21050LR3 MRF6S21050LSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS x AMPS2)
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
−10
1
(dB)
PROBABILITY (%)
10
0.1
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
−20
−30
−40
−50
−60
0.001
−70
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25 −20
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
7
Zo = 25 Ω
f = 2200 MHz
Zload
f = 2080 MHz
Zsource
f = 2200 MHz
f = 2080 MHz
VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2080
2090
2100
2110
4.09
3.74
3.95
4.44
-
j14.65
j13.95
j13.36
j13.00
2.36
2.25
2.40
2.68
-
j7.52
j7.11
j6.78
j6.59
2120
2130
2140
2150
2160
2170
2180
2190
2200
5.03
5.55
5.76
5.57
4.86
4.04
3.69
3.91
4.41
-
j12.89
j13.05
j13.26
j13.70
j13.92
j13.61
j12.91
j12.44
j12.32
2.99
3.26
3.32
3.20
2.82
2.44
2.33
2.49
2.77
-
j6.52
j6.64
j6.68
j6.87
j6.93
j6.70
j6.29
j6.05
j5.96
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21050LR3 MRF6S21050LSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6S21050LR3 MRF6S21050LSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
G
bbb
Q
M
T B
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
3
2X K
B
2
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
2X D
bbb
M
T A
B
M
M
N (LID)
ccc
M
T A
M
B
ccc
M
aaa
M
T A
B
M
M
A
M
F
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
S
(INSULATOR)
SEATING
PLANE
aaa
M
T A
H
B
M
M
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
CASE 465E - 04
ISSUE F
NI - 400
MRF6S21050LR3
2X D
bbb M T A
M
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
2
2X K
ccc
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE E
NI - 400S
MRF6S21050LSR3
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
11
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unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF6S21050LR3 MRF6S21050LSR3
Document Number: MRF6S21050L
Rev. 1, 5/2006
12
RF Device Data
Freescale Semiconductor