FREESCALE MRF6S21100HSR3

Freescale Semiconductor
Technical Data
Document Number: MRF6S21100H
Rev. 7, 1/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S21100HR3
MRF6S21100HSR3
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
• Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 950 mA,
Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.9 dB
Drain Efficiency — 27.6%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S21100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S21100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
Tc
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 23 W CW
RθJC
0.45
0.52
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 950 mAdc)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
1.5
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
14.5
15.9
17.5
dB
Drain Efficiency
ηD
26
27.6
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 39.5
- 38
dBc
IRL
—
- 16
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S21100HR3 MRF6S21100HSR3
2
RF Device Data
Freescale Semiconductor
B1
R2
VBIAS
R1
+
C1
+
C2
C4
+
C9
C8
C3
+
C10
+
C11
C13
+
C12
VSUPPLY
+
C14
C5
Z8
Z5
RF
INPUT
Z1
Z2
Z3
Z6
Z7
Z9
Z10
Z11
Z4
Z12
RF
OUTPUT
C7
C6
DUT
Z1, Z12
Z2
Z3
Z4
Z5
Z6
1.250″
1.070″
0.330″
0.093″
1.255″
0.160″
x 0.084″
x 0.084″
x 0.800″
x 0.800″
x 0.040″
x 0.880″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.320″ x 0.880″ Microstrip
0.120″ x 0.820″ Microstrip
0.035″ x 0.320″ Microstrip
0.335″ x 0.200″ Microstrip
0.650″ x 0.084″ Microstrip
Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S21100HR3(SR3) Test Circuit Schematic
Table 5. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair - Rite
C1
1.0 μF, 50 V Tantalum Capacitor
T491C105M050AT
Kemet
C2
10 μF, 50 V Electrolytic Capacitor
EEV - HB1H100P
Panasonic
C3
1000 pF 100B Chip Capacitor
ATC100B102JT500XT
ATC
C4, C13
0.1 μF 100B Chip Capacitors
CDR33BX104AKWY
Kemet
C5
5.1 pF Chip Capacitor
ATC100B5R1JT500XT
ATC
C6, C7
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C8
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C9, C10, C11, C12
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C14
100 μF, 50 V Electrolytic Capacitor
515D107M050BB6AE3
Vishay/Sprague
R1
1.0 kW, 1/8 W Chip Resistor
CRCW08051000FKTA
Vishay
R2
10 W, 1/8 W Chip Resistor
CRCW080510R0FKTA
Vishay
MRF6S21100HR3 MRF6S21100HSR3
RF Device Data
Freescale Semiconductor
3
C1
C14
C9 C10
R1
B1 R2
C8
C5
VDD
VGG
C11
C2
C4
C12
C3
C7
CUT OUT AREA
C6
C13
2.1 GHz
NI780
Rev 4
Figure 2. MRF6S21100HR3(SR3) Test Circuit Component Layout
MRF6S21100HR3 MRF6S21100HSR3
4
RF Device Data
Freescale Semiconductor
ηD
VDD = 28 Vdc
Pout = 23 W (Avg.)
IDQ = 950 mA
2−Carrier W−CDMA
10 MHz Carrier Spacing
15.8
27
Gps
−36
IM3 −U
15.6
−38
IRL
15.4
IM3 −L
−40
ACPR −U
15.2
−42
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
ACPR −L
15
2080
2100
2120
2140
2160
2180
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
16
28
−44
2200
−10
−20
−30
−40
IRL, INPUT RETURN LOSS (dB)
16.2
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 23 Watts Avg.
44
ηD
15.2
15
42
VDD = 28 Vdc
Pout = 55 W (Avg.)
IDQ = 950 mA
40
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
IM3 −L
IRL
Gps
−24
IM3 −U
14.8
−26
PAR = 8.5 dB @ 0.01% Probability (CCDF)
14.6
14.4
2080
−28
ACPR −U
ACPR −L
2100
2120
2140
2160
2180
−30
2200
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
15.4
−10
−20
−30
−40
IRL, INPUT RETURN LOSS (dB)
ηD, DRAIN
EFFICIENCY (%)
15.6
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 55 Watts Avg.
17.5
IDQ = 1450 mA
G ps , POWER GAIN (dB)
17
1200 mA
16.5
950 mA
16
15.5
700 mA
15
14.5
450 mA
14
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
13.5
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−20
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
−25
−30
IDQ = 450 mA
−35
1450 mA
1200 mA
−40
950 mA
−45
−50
700 mA
−55
1
10
100
300
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21100HR3 MRF6S21100HSR3
RF Device Data
Freescale Semiconductor
5
−20
56
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 950 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−25
−30
Pout , OUTPUT POWER (dBm)
3rd Order
−35
−40
5th Order
−45
7th Order
−50
−55
−60
Ideal
P3dB = 51.5 dBm (141 W)
54
P1dB = 50.9 dBm (123 W)
52
Actual
50
48
VDD = 28 Vdc, IDQ = 950 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
46
44
0.1
1
100
10
28
30
32
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
ηD, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
34
36
38
40
42
Pin, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
50
−10
ηD
VDD = 28 Vdc, IDQ = 950 mA
f1 = 2135 MHz, f2 = 2145 MHz
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
40
30
IM3
−20
−30
ACPR
20
Gps
10
−40
IM3 (dBc), ACPR (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
−50
0
−60
0.4
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
G ps , POWER GAIN (dB)
14
17
50
16
40
12
30
10
20
VDD = 28 Vdc
IDQ = 950 mA
f = 2140 MHz
8
ηD
10
6
0
1
10
100
200
G ps , POWER GAIN (dB)
Gps
16
60
ηD, DRAIN EFFICIENCY (%)
18
15
32 V
14
VDD = 24 V
28 V
13
IDQ = 950 mA, f = 2140 MHz
12
0
20
40
60
80
100
120
140
160
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
180
MRF6S21100HR3 MRF6S21100HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 27.6%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
+20
100
3.84 MHz
Channel BW
+30
0
−10
1
−20
(dB)
PROBABILITY (%)
10
0.1
−30
−40
0.01
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
−50
−60
−70
0.0001
0
2
4
6
8
10
PEAK −TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−80
−25
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−20
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21100HR3 MRF6S21100HSR3
RF Device Data
Freescale Semiconductor
7
f = 2200 MHz
Zo = 10 Ω
Zload
f = 2080 MHz
f = 2200 MHz
Zsource
f = 2080 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2080
2.44 - j6.3
1.83 - j3.0
2110
2.25 - j6.1
1.74 - j2.8
2140
2.09 - j5.8
1.61 - j2.6
2170
1.98 - j5.6
1.59 - j2.5
2200
1.85 - j5.4
1.52 - j2.3
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21100HR3 MRF6S21100HSR3
8
RF Device Data
Freescale Semiconductor
TD - SCDMA CHARACTERIZATION
R2
B1
VBIAS
R1
+
C1
+
C2
C4
C3
C8
+
C9
+
C10
+
C11
+
C12
C13
VSUPPLY
+
C14
C5
Z11
Z5
Z1
RF
INPUT
Z2
Z3
Z6
Z7
Z8
Z9
Z10
Z4
RF
OUTPUT
C7
C6
DUT
Z1
Z2
Z3
Z4
Z5
Z6
1.250″
0.930″
0.470″
0.090″
1.500″
0.160″
x 0.084″
x 0.084″
x 0.800″
x 0.800″
x 0.040″
x 0.880″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.320″ x 0.880″ Microstrip
0.370″ x 0.200″ Microstrip
0.650″ x 0.084″ Microstrip
1.230″ x 0.084″ Microstrip
0.870″ x 0.120″ Microstrip
Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 16. MRF6S21100HR3(SR3) Test Circuit Schematic — TD - SCDMA
Table 6. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values — TD - SCDMA
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair - Rite
C1
1.0 μF, 50 V Tantalum Capacitor
T491C105M050AT
Kemet
C2
10 μF, 50 V Electrolytic Capacitor
EEV - HB1H100P
Panasonic
C3
1000 pF 100B Chip Capacitor
ATC100B102JT500XT
ATC
C4, C13
0.1 μF 100B Chip Capacitors
CDR33BX104AKWY
Kemet
C5
5.1 pF Chip Capacitor
ATC100B5R1JT500XT
ATC
C6, C7
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C8
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C9, C10, C11, C12
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C14
100 μF, 50 V Electrolytic Capacitor
515D107M050BB6AE3
Vishay/Sprague
R1
1.0 kW, 1/8 W Chip Resistor
CRCW08051000FKTA
Vishay
R2
10 W, 1/8 W Chip Resistor
CRCW080510R0FKTA
Vishay
MRF6S21100HR3 MRF6S21100HSR3
RF Device Data
Freescale Semiconductor
9
C1
C14
C9 C10
R1
B1 R2
C8
C5
VDD
VGG
C11
C2
C4
C12
C3
C7
CUT OUT AREA
C6
C13
2.1 GHz
NI780
Rev 4
Figure 17. MRF6S21100HR3(SR3) Test Circuit Component Layout — TD - SCDMA
MRF6S21100HR3 MRF6S21100HSR3
10
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−30
18
−35
15
ηD
ALT/ACPR (dBc)
Adj −U
−40
12
Adj −L
9
−45
6
−50
Alt−L
3
−55
ηD, DRAIN EFFICIENCY (%)
3−Carrier TD−SCDMA
VDD = 28 V, IDQ = 800 mA
f = 2017.5 MHz
Alt−U
−60
0
0
2
1
3
4
5
6
7
8
9
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
−30
18
ALT/ACPR (dBc)
−35
ηD
15
12
−40
Adj −U
−45
9
Adj −L
Alt−L
−50
6
Alt−U
−55
−60
0.5
3
ηD, DRAIN EFFICIENCY (%)
6−Carrier TD−SCDMA
VDD = 28 V, IDQ = 800 mA
f = 2017.5 MHz
0
1.5
2.5
3.5
4.5
5.5
6.5
7.5
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
−30
−30
1.28 MHz
Channel BW
−40
−50
−50
−60
−70
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
−80
−90
−100
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−100
−110
−120
(dBm)
(dBm)
−90
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−60
−70
−80
1.28 MHz
Channel BW
−40
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−110
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
1.5 MHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3 - Carrier TD - SCDMA Spectrum
−120
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
2.5 MHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6 - Carrier TD - SCDMA Spectrum
MRF6S21100HR3 MRF6S21100HSR3
RF Device Data
Freescale Semiconductor
11
Zo = 5 Ω
f = 2070 MHz
Zload
f = 1950 MHz
Zsource
f = 1950 MHz
f = 2070 MHz
VDD = 28 Vdc, IDQ = 800 mA
f
MHz
Zsource
W
Zload
W
1950
1.04 - j4.28
1.38 - j3.90
1960
1.07 - j4.31
1.41 - j3.92
1970
0.96 - j4.13
1.29 - j3.71
1980
0.82 - j3.71
1.12 - j3.34
1990
0.79 - j3.34
1.07 - j2.96
2000
0.82 - j3.15
1.08 - j2.75
2010
0.88 - j3.16
1.12 - j2.76
2020
0.84 - j3.30
1.11 - j2.86
2030
0.83 - j3.47
1.12 - j3.01
2040
0.91 - j3.71
1.22 - j3.20
2050
0.91 - j3.90
1.25 - j3.34
2060
0.81 - j3.81
1.15 - j3.27
2070
0.76 - j3.45
1.09 - j2.92
Zsource = Device input impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance — TD - SCDMA
MRF6S21100HR3 MRF6S21100HSR3
12
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
N
M
T A
B
M
M
ccc
M
T A
M
M
aaa
M
T A
M
M
T A
B
M
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
(INSULATOR)
B
M
C
F
E
A
T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
K
2X
2
B
D
bbb
M
T A
M
B
M
N
M
R
(LID)
ccc
M
T A
M
B
M
ccc
M
T A
M
T A
M
S
(INSULATOR)
bbb
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
CASE 465 - 06
ISSUE G
NI - 780
MRF6S21100HR3
4X U
(FLANGE)
(FLANGE)
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
F
T
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S21100HSR3
MRF6S21100HR3 MRF6S21100HSR3
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
7
Jan. 2007
Description
• Added “TD - SCDMA” to data sheet description paragraph, p. 1
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers,
p. 3
• Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 5
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 9 - 12
• Added Product Documentation and Revision History, p. 14
MRF6S21100HR3 MRF6S21100HSR3
14
RF Device Data
Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2007. All rights reserved.
MRF6S21100HR3 MRF6S21100HSR3
Document
Number:
RF
Device
Data MRF6S21100H
Rev. 7, 1/2007
Freescale
Semiconductor
15