FREESCALE MRF8S9200NR3_10

Freescale Semiconductor
Technical Data
Document Number: MRF8S9200N
Rev. 1, 5/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
19.9
37.7
6.1
--36.2
940 MHz
19.9
37.1
6.1
--36.6
960 MHz
19.5
36.8
6.0
--36.0
MRF8S9200NR3
920--960 MHz, 58 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 300 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 200 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
CASE 2021--03, STYLE 1
OM--780--2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 58 W CW, 28 Vdc, IDQ = 1400 mA
Case Temperature 80°C, 200 W CW, 28 Vdc, IDQ = 1400 mA
RθJC
0.30
0.25
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9200NR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD22--A113, IPC/JEDEC J--STD--020
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3
3.8
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg., f = 940 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18
19.9
21
dB
Drain Efficiency
ηD
34
37.1
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
5.8
6.1
—
dB
ACPR
—
--36.6
--35
dBc
IRL
—
--22
--9
dB
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
19.9
37.7
6.1
--36.2
--14
940 MHz
19.9
37.1
6.1
--36.6
--22
960 MHz
19.5
36.8
6.0
--36.0
--15
1. Part internally matched both on input and output.
(continued)
MRF8S9200NR3
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
200
—
—
15
—
W
IMD Symmetry @ 160 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
45
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 58 W Avg.
GF
—
0.7
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.012
—
dB/°C
∆P1dB
—
0.001
—
dBm/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
MRF8S9200NR3
RF Device Data
Freescale Semiconductor
3
C29
R1
B1
VGS
C22
C4
C21
C5
C25 C26
C31
VDS
C6 C7
R2
C11
C1
C2
C3
C8 C9
CUT OUT AREA
C10
C19
C12
C13
C14
C15
C32
C16
C17
C18
C20
C27 C28
C23 C24
C30
MRF8S9200N
Rev 0
Figure 1. MRF8S9200NR3 Test Circuit Component Layout
Table 6. MRF8S9200NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Beads, Short
2743019447
Fair--Rite
C1, C5, C19, C21, C22,
C23, C24
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C2
2 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C3
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C4
2.2 μF Chip Capacitor
C1825C225J5RAC--TU
Kemet
C6, C7, C8, C9
3.3 pF Chip Capacitors
ATC100B3R3CT500XT
ATC
C10, C12
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C11, C13
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C14, C20
0.8 pF Chip Capacitors
ATC100B0R8BT500XT
ATC
C15, C17
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C16
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C18
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
C25, C26, C27, C28
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C29, C30
470 μF, Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C31
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Cap.
C32
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
R1
3.3 Ω, 1/2 W Chip Resistor
P3.3VCT--ND
Panasonic
R2
0 Ω, 3.5 A Chip Resistor
CRCW12060000Z0EA
Vishay
PCB
0.030″, εr = 3.5
RF--35
Taconic
MRF8S9200NR3
4
RF Device Data
Freescale Semiconductor
ηD
42
40
38
Gps
19
36
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
--30
--5
18
--32
--10
17.5
--34
18.5
IRL
ACPR
17
--36
16.5
16
800
--38
PARC
825
850
875
900
925
950
975
ACPR (dBc)
Gps, POWER GAIN (dB)
20
19.5
44
VDD = 28 Vdc, Pout = 58 W (Avg.)
IDQ = 1400 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
--40
1000
--15
--20
--25
--30
0
--0.5
--1
--1.5
--2
PARC (dB)
20.5
IRL, INPUT RETURN LOSS (dB)
21
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 58 Watts Avg.
--10
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
--20
IM3--U
--30
IM3--L
--40
IM5--U
IM5--L
IM7--L
--50
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
19.5
0
19
18.5
18
17.5
17
--1
Gps
PARC
ηD
--5
35
VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
30
50
--25
40
--2 dB = 69.69 W
--4
50
45
--3 dB = 95.95 W
--3
--20
ACPR
--1 dB = 49.04 W
--2
55
70
90
110
--30
--35
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
20
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
30
--45
25
--50
130
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S9200NR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
23
Gps, POWER GAIN (dB)
22
21
20
19
960 MHz
940 MHz
18
920 MHz
17
50
40
30
16
ACPR
20
ηD
15
--24
10
0
300
100
--28
--32
--36
--40
--44
--48
--52
--56
10
14
1
--20
ACPR (dBc)
100
VDD = 28 Vdc, IDQ = 1400 mA, Single--Carrier
960 MHz
90
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
940 MHz
920 MHz 80
Probability on CCDF
960 MHz
70
Gps
f = 920 MHz
60
ηD, DRAIN EFFICIENCY (%)
24
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
25
5
20
Gain
0
--5
10
--10
5
IRL
0
--5
--15
--20
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1400 mA
--10
--15
550
750
650
850
IRL (dB)
GAIN (dB)
15
--25
950
1050
1150
1250
--30
1350
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9200NR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
1.16 -- j2.85
2.29 -- j2.08
840
1.09 -- j2.63
2.11 -- j1.95
860
1.04 -- j2.45
1.94 -- j1.81
880
0.98 -- j2.27
1.76 -- j1.68
900
0.93 -- j2.08
1.59 -- j1.51
920
0.88 -- j1.90
1.42 -- j1.33
940
0.83 -- j1.72
1.28 -- j1.13
960
0.79 -- j1.55
1.14 -- j0.93
980
0.76 -- j1.39
1.02 -- j0.73
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9200NR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
59
Pout, OUTPUT POWER (dBm)
58
f = 960 MHz
f = 940 MHz
57
f = 920 MHz
56
Actual
55
Ideal
54
53
f = 960 MHz
f = 920 MHz
52
f = 940 MHz
51
50
49
30
31
32
33
34
35
37
36
38
39
40
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
267
54.3
332
55.2
940
263
54.2
327
55.1
960
261
54.2
327
55.2
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
0.70 -- j1.66
0.82 -- j1.52
940
P1dB
0.68 -- j1.85
0.73 -- j1.60
960
P1dB
0.87 -- j1.99
0.76 -- j1.70
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9200NR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S9200NR3
RF Device Data
Freescale Semiconductor
9
MRF8S9200NR3
10
RF Device Data
Freescale Semiconductor
MRF8S9200NR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2009
• Initial Release of Data Sheet
1
May 2010
• Revised VSWR statement to correct output power from 200 Watts CW to 300 Watts CW, p. 1
• Replaced Case Outline 2021--01, Issue O, with 2021--03, Issue B, p. 1, 9--11. Changed “Drain Lead” to
“Pin 1” and “Gate Lead” to “Pin 2” on Sheet 1. Corrected “A2” to “A1” in Note 7, and changed dimension
A1 from 0.061″--0.063″ (1.55--1.60 mm) to 0.059″--0.065″ (1.50--1.65 mm) on Sheet 3. Added 4 exposed
source tabs at dimension e1 on Sheets 1 and 2. Added dimension e1 0.721″--0.729″ (18.31--18.52 mm) in
the table, revised D1 minimum dimension from 0.730″ (18.54 mm) to 0.720″ (18.29 mm), revised dimension
E2 from 0.312″ (7.92 mm) to 0.306″ (7.77 mm), and revised wording of Note 8 on Sheet 3.
• Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2
MRF8S9200NR3
12
RF Device Data
Freescale Semiconductor
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MRF8S9200NR3
Document
Number:
RF
Device
Data MRF8S9200N
Rev. 1, 5/2010
Freescale
Semiconductor
13