FDMA3027PZ Dual P-Channel PowerTrench® MOSFET -30 V, -3.3 A, 87 mΩ Features General Description This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A HBM ESD protection level > 2 KV typical (Note 3) Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant Applications Load Switch Discrete Gate Driver PIN 1 S1 G1 D1 D1 Top D2 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 G2 S2 Bottom MicroFET 2x2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Ratings -30 Units V ±25 V -3.3 -15 Power Dissipation (Note 1a) 1.4 Power Dissipation (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 Thermal Resistance for Single Operation, Junction to Ambient (Note 1e) 160 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1f) 133 °C/W Package Marking and Ordering Information Device Marking 327 Device FDMA3027PZ ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C Package MicroFET 2X2 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMA3027PZ Dual P-Channel PowerTrench® MOSFET June 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 μA -3 V -30 V -22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C VGS = -10 V, ID = -3.3 A 69 87 rDS(on) Static Drain to Source On Resistance VGS = -4.5 V, ID = -2.3 A 108 152 VGS = -10 V, ID = -3.3 A, TJ = 125 °C 97 122 VDS = -5 V, ID = -3.3 A 6 gFS Forward Transconductance -1 -1.9 5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -15 V, VGS = 0 V, f = 1 MHz 324 435 pF 59 80 pF 53 80 pF Ω 12 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = -15 V, ID = -3.3 A, VGS = -10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to -10 V Total Gate Charge VGS = 0 V to -5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15 V, ID = -3.3 A 5.2 11 ns 3 10 ns 17 31 ns 11 25 ns 7.2 10 nC 4.1 6 nC 1.0 nC 1.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C VGS = 0 V, IS = -3.3 A IF = -3.3 A, di/dt = 100 A/μs 2 (Note 2) -0.94 -1.3 V 20 32 ns 10 18 nC www.fairchildsemi.com FDMA3027PZ Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Notes: 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RθJA (d) RθJA (e) RθJA (f) RθJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. = 160 oC/W when mounted on a 30 mm2 pad of 2 oz copper. For single operation. = 133 oC/W when mounted on a 30 mm2 pad of 2 oz copper. For dual operation. a. 86 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 173 °C/W when mounted on a minimum pad of 2 oz copper c. 69 °C/W when mounted on a 1 in2 pad of 2 oz copper d. 151 °C/W when mounted on a minimum pad of 2 oz copper f. 133 °C/W when mounted on 30 mm2 pad of 2 oz copper e. 160 °C/W when mounted on 30 mm2 pad of 2 oz copper 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C 3 www.fairchildsemi.com FDMA3027PZ Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 15 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 VGS = -5 V VGS = -10 V 12 VGS = -4.5 V 9 VGS = -4 V 6 VGS = -3.5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 5 VGS = -3.5 V 4 VGS = -4 V 3 VGS = -4.5 V 2 VGS = -5 V 1 0 0 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.1 1.0 0.9 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.3 15 300 200 TJ = 125 oC 100 TJ = 25 oC -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage -IS, REVERSE DRAIN CURRENT (A) 15 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 12 VDS = -5 V 9 6 TJ = PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = -3.3 A 0 -50 Figure 3. Normalized On- Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) 12 400 ID = -3.3 A VGS = -10 V 1.4 3 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.7 -75 6 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.5 VGS = -10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 oC TJ = 25 oC 20 10 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 TJ = -55 oC 0 1 2 3 4 5 0.001 0.0 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C 4 1.6 www.fairchildsemi.com FDMA3027PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 -VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = -15 V ID = -3.3 A Ciss CAPACITANCE (pF) 8 VDD = -20 V VDD = -10 V 6 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 10 0.1 8 Figure 7. Gate Charge Characteristics -1 30 20 VDS = 0 V -2 10 10 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 10 -3 10 -4 10 -5 10 TJ = 125 oC -6 10 -7 10 TJ = 25 oC 1 1 ms THIS AREA IS LIMITED BY rDS(on) 0.1 -8 10 -9 10 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0 4 8 12 16 20 24 28 100 ms SINGLE PULSE TJ = MAX RATED RθJA = 173 oC/W 1s 10 s TA = 25 oC DC 0.01 0.1 32 10 ms 1 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 30 10 SINGLE PULSE 1 o RθJA = 173 C/W o TA = 25 C 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C 5 www.fairchildsemi.com FDMA3027PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 173 C/W 0.02 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C 6 www.fairchildsemi.com FDMA3027PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMA3027PZ Dual P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C 7 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C 8 www.fairchildsemi.com FDMA3027PZ Dual P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ PowerXS™ FRFET® Global Power ResourceSM AX-CAP™* Programmable Active Droop™ ® ® Green Bridge™ BitSiC QFET TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ SmartMax™ Dual Cool™ and Better™ TranSiC® SMART START™ EcoSPARK® MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ ® SyncFET™ OptoHiT™ FAST ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR ®* FETBench™ XS™ FlashWriter® * ® FPS™