FREESCALE TIP3055

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by TIP3055/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for general–purpose switching and amplifier applications.
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• DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc
• Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc
• Excellent Safe Operating Area
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
90 WATTS
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
60
Vdc
Collector–Emitter Voltage
VCER
70
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
VEB
7.0
Vdc
IC
15
Adc
Base Current
IB
7.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
90
0.72
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Collector Current — Continuous
Operating and Storage Junction
Temperature Range
CASE 340D–01
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.39
_C/W
Thermal Resistance, Junction to Ambient
RθJA
35.7
_C/W
hFE , DC CURRENT GAIN
1000
VCE = 4.0 V
TJ = 25°C
100
10
0.1
TIP3055
TIP2955
0.2
0.5 0.7 1.0
0.3
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
Figure 1. DC Current Gain
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
60
—
Vdc
Collector Cutoff Current
(VCE = 70 Vdc, RBE = 100 Ohms)
ICER
—
1.0
mAdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
—
0.7
mAdc
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
ICEV
—
5.0
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
20
5.0
70
—
—
—
1.1
3.0
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Vdc
Base–Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.8
Vdc
Is/b
3.0
—
Adc
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
—
MHz
Small–Signal Current Gain
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
hfe
15
—
kHz
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)
DYNAMIC CHARACTERISTICS
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2.0%.
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
IC, COLLECTOR CURRENT (AMPS)
100
50
30
20
1.0 ms
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0
300 µs
dc
10 ms
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
TJ = 150°C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature.
2.0
4.0 6.0
10
20
40 60
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
C
Q
B
U
S
E
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
4
A
L
1
2
3
K
D
J
H
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
G
MILLIMETERS
MIN
MAX
19.00
19.60
14.00
14.50
4.20
4.70
1.00
1.30
1.45
1.65
5.21
5.72
2.60
3.00
0.40
0.60
28.50
32.00
14.70
15.30
4.00
4.25
17.50
18.10
3.40
3.80
1.50
2.00
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.749
0.771
0.551
0.570
0.165
0.185
0.040
0.051
0.058
0.064
0.206
0.225
0.103
0.118
0.016
0.023
1.123
1.259
0.579
0.602
0.158
0.167
0.689
0.712
0.134
0.149
0.060
0.078
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340D–01
ISSUE A
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*TIP3055/D*
TIP3055/D