2N6517 NPN Epitaxial Silicon Transistor Features • • • • High Voltage Transistor Collector Dissipation: PC(max) = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 2N6517 2N6517C 350 400 V V VCEO Collector-Emitter Voltage 2N6517 2N6517C 350 400 V V VEBO Emitter-Base Voltage 6 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Symbol Ta = 25°C unless otherwise noted Parameter Conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage 2N6517 IC = 100µA, IE = 0 2N6517C IC = 100µA, IE = 0 350 400 V V BVCEO Collector-Emitter Breakdown Voltage * 2N6517 IC = 1mA, IB = 0 2N6517C IC = 1mA, IB = 0 350 400 V V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 ICBO Collector Cut-off Current VCB = 250V, IE = 0 50 nA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 50 nA hFE DC Current Gain * 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517C VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 30mA VCE = 10V, IC = 50mA VCE = 10V, IC = 100mA VCE = 10V, IC = 5mA © 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 6 20 30 30 20 15 50 V 200 200 200 www.fairchildsemi.com 1 2N6517 — NPN Epitaxial Silicon Transistor August 2010 Symbol Max. Units VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 20mA, IB = 2mA IC = 30mA, IB = 3mA IC = 50mA, IB = 5mA 0.3 0.35 0.5 1 V V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 20mA, IB = 2mA IC = 30mA, IB = 3mA 0.75 0.85 0.9 V V V Output Capatitance VCB = 20V, IE = 0, f = 1MHz Current Gain Bandwidth Product * IC = 10mA, VCE = 20V, f = 20MHz Base-Emitter On Voltage IC = 100mA, VCE = 10V Cob fT VBE(on) Parameter Conditions Min. 40 6 pF 200 MHz 2 V * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% © 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 www.fairchildsemi.com 2 2N6517 — NPN Epitaxial Silicon Transistor Electrical Characteristics (Continued) Ta = 25°C unless otherwise noted 1000 100 hFE, DC CURRENT GAIN 100 VCE(sat) [V], SATURATION VOLTAGE VCE = 10V o Ta = 25 C o Ta = 75 C 10 o Ta = 125 C 1 0.1 IC = 10 IB 10 o Ta = 75 C 0.1 o Ta = 25 C 0.01 1 10 100 o Ta = 125 C 1 1000 1 10 100 1000 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Saturation Voltage 100 VBE(sat) [V], SATURATION VOLTAGE IC = 10 IB o IEBO [nA], Emitter Cut Off Current Ta = 125 C 1 o Ta = 25 C o Ta = 75 C o Ta = 125 C 0.1 1 10 100 10 1 0.1 0.01 o Ta = 25 C 1E-3 1000 o Ta = 75 C 1 IC [mA], COLLECTOR CURRENT Figure 3. Saturation Voltage 4 5 6 1.6 VBE(on) [V], BASE-EMITTER ON VOLTAGE ICBO [nA], Collector CutOff Current 3 Figure 4. Emitter Cut Off Current 10000 1000 o Ta = 125 C 100 10 o Ta = 75 C 1 o Ta = 25 C 0.1 50 100 150 200 250 300 350 VCB [V], COLLECTOR-BASE VOLTAGE VCE = 10V o Ta = 25 C 1.4 1.2 1.0 0.8 0.6 0.4 1 10 100 1000 IC [mA], COLLECTOR CURRENT Figure 5. Collector CutOff Current Figure 6. Base-Emitter On Voltage © 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 2 VEB [V], EMITTER-BASE VOLTAGE www.fairchildsemi.com 3 2N6517 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) 50 2.0 f = 1MHz CEB [pF], Emitter-Base Capacitance CCB [pF], Collector-Base Capacitance f = 1MHz 1.8 1.6 1.4 1.2 1.0 0 20 40 60 80 45 40 35 30 25 20 1.0 100 1.5 Figure 7. Output Capacitance 3.0 3.5 4.0 4.5 5.0 1000 td, tr & tON [ns], SWITCHING TIME fT [MHz], Current Gain Bandwidth 2.5 Figure 8. Input Capacitance 100 10 1 2.0 VEB [V], EMITTER-BASE VOLTAGE VCB [V], COLLECTOR-BASE VOLTAGE 1 10 tON 100 tr td VCC=100V o IC=5IB1=-5IB2, Ta=25 C 10 10 100 IC [mA], COLLECTOR CURRENT 100 IC [mA], COLLECTOR CURRENT Figure 9. Current Gain Bandwidth Product Figure 10. Resistive Load Switching 10000 tstg, tf & tOFF [ns], SWITCHING TIME tOFF tstg 1000 tf 100 VCC=100V o IC=5IB1=-5IB2, Ta=25 C 10 10 100 IC [mA], COLLECTOR CURRENT Figure 11. Resistive Load Switching © 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 www.fairchildsemi.com 4 2N6517 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics 2N6517 — NPN Epitaxial Silicon Transistor Physical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 14.47 ±0.40 0.46 ±0.10 +0.10 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 0.38 –0.05 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 ±0.20 (R2.29) Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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