FUJI TS985C6R

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TS985C6R
FUJI Diode
Low-Loss Fast Recovery Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak reverse voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Conditions
Ratings
Units
VRRM
-
600
V
Io
50Hz Square wave duty =1/2
Tc = 86˚C
20 *
A
IFSM
50
A
Tj
Sine wave, 10ms 1shot
-
150
˚C
Tstg
-
-40 to +150
˚C
Conditions
Maximum
Units
3.0
V
Note* Out put current of center tap full wave connection.
Note**Rating per element
Electrical characteristics
Item
Forward voltage***
(at Ta=25˚C unless otherwise specified.)
Symbols
VF
IF = 10 A
Reverse current***
IR
VR =VRRM
30
µA
Reverse recovery time***
trr
IF =0.1A, IR =0.2A, Irec =0.05A
0.028
µS
Junction to case
1.25
˚C/W
Conditions
Maximum
Units
-
1.6
g
Thermal resistance
Rth(j-c)
Note*** Rating per element
Mechanical characteristics
Item
Approximate mass
1
TS985C6R
FUJI Diode
http://www.fujisemi.com
Outline Drawings [mm]
2
TS985C6R
FUJI Diode
http://www.fujisemi.com
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
102
Tj=150°C
101
Tj=125°C
10
IR Reverse Current (µA)
IF Forward Current (A)
Tj=100°C
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
10
0
10-1
Tj=25°C
10-2
10-3
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0
2.8
100
200
300
400
500
600
700
VR Reverse Voltage (V)
VF Forward Voltage (V)
Reverse Power Dissipation (max.)
Forward Power Dissipation (max.)
0.035
35
DC
360°
360°
0.030
30
VR
I0
α
(W)
λ
0.025
(W)
Reverse Power Dissipation
Square wave λ=60°
20
Square wave λ=120°
Sine wave λ=180°
Square wave λ=180°
15
DC
PR
WF
Forward Power Dissipation
25
10
0.020
α=180°
0.015
0.010
0.005
5
Per 1element
0.000
0
0
2
4
6
IF(AV) Average Forward Current
8
0
10
100
200
VR
(A)
3
300
400
Reverse Voltage
500
(V)
600
700
TS985C6R
FUJI Diode
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Current Derating (IF(AV)-Tc) (max.)
Junction Capacitance Characteristic (typ.)
160
1000
150
140
130
Junction Capacitance (pF)
110
100
Cj
Tc
Case Temperature
(°C)
100
120
DC
90
10
Square wave λ=180°
Sine wave λ=180°
Square wave λ=120°
80
70
Square wave λ=60°
60
0
2
4
6
8
10
12
14
16
18
20
IF(AV) Average Forward Current
22
24
26
28
1
1
(A)
λ:Conduction angle of forward current for each rectifier element
IF(AV):Forward current of center-tap full wave connection
Surge Capability (max.)
100
IFSM
Peak Half - Wave Current
(A)
1000
10
1
1
10
100
Number of Cycles at 50Hz
4
10
100
VR
Reverse Voltage (V)
1000
TS985C6R
FUJI Diode
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Transient Thermal Impedance (max.)
2
Transient Thermal Impedance
(°C/W)
10
1
10
Rth j-c:1.25℃/W
0
10
-1
10
-2
10
-1
10
0
1
10
10
t
Time
5
(sec)
2
10
3
10
TS985C6R
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
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is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or
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may arise from the use of the applications described herein.
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products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
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become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
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he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
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• Transportation equipment (mounted on cars and ships)
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6