FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-1E Memory FRAM CMOS 1 M Bit (64 K×16) MB85R1002 ■ DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1002 is able to retain data without back-up battery. The memory cells used for the MB85R1002 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance. The MB85R1002 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM. ■ FEATURES • • • • • • Bit configuration : 65,536 words x 16 bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C LB and UB data byte control 48-pin, TSOP(1) plastic package ■ PACKAGE 48-pin plastic TSOP(1) (FPT-48P-M25) MB85R1002 ■ PIN ASSIGNMENT (TOP VIEW) A15 A14 A13 A12 A11 A10 A9 A8 N.C. N.C. WE CE2 GND UB LB VCC N.C. A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 N.C. N.C. GND I/O16 I/O8 I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 VCC I/O12 I/O4 I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 OE GND CE1 A0 (FPT-48P-M25) ■ PIN DESCRIPTION Pin name A0 to A15 Adderss In I/O1 to I/O16 Data Input/Output CE1 Chip Enable 1 in CE2 Chip Enable 2 in WE Write Enable in OE Output Enable in LB, UB 2 Function Data Byte Control in VCC Power Supply GND Ground MB85R1002 ■ BLOCK DIAGRAM to · · · Address Latch. A0 Row Dec. Ferro Capacitor Cell A15 Column Dec. intCE2 S/A intCE2 CE2 intCEB LB intOE intWE intCE2 I/O1 to I/O8 I/O9 to I/O16 I/O16 UB · · WE I/O9 OE CE1 to intCEB I/O8 · · to I/O1 3 MB85R1002 ■ FUNCTION TRUTH TABLE Mode Standby Pre-charge Read Read (Pseudo-SRAM, OE control) Write CE1 CE2 WE OE LB UB H X X X X X X L X X X X X X H H X X X X X X H H L H L L H H L Write (Pseudo-SRAM, WE control) L Output Disable L H H L H H L X H H H I/O1 to I/O8 I/O9 to I/O16 Supply Current High-Z High-Z Standby (ISB) L Dout Dout L H Dout High-Z H L High-Z Dout L L Dout Dout L H Dout High-Z H L High-Z Dout L L Din Din L H Din High-Z H L High-Z Din L L Din Din L H Din High-Z H L High-Z Din X X High-Z High-Z Notes : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance : Latch address at falling edge, : Latch address at rising edge 4 Operation (ICC) MB85R1002 ■ ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Min Max Unit Supply Voltage VCC −0.5 +4.0 V Input Voltage VIN −0.5 VCC + 0.5 V VOUT −0.5 VCC + 0.5 V Ambient Operating Temperature TA −20 +85 o C Storage Temperature Tstg −40 +125 o C Output Voltage WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min (VCC = 3.0 V to 3.6 V, TA = −20 oC to +85 oC) Value Unit Typ Max Supply Voltage VCC 3.0 3.3 3.6 V Input Voltage (high) VIH VCC x 0.8 ⎯ VCC + 0.5 V Input Voltage (low) VIL −0.5 ⎯ +0.6 TA − 20 ⎯ +85 Ambient Operating Temperature V o C WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 5 MB85R1002 ■ ELECTRICAL CHARACTERISTICS 1. DC CHARACTERISTICS Parameter (VCC = 3.0 V to 3.6 V, TA = −20 oC to +85 oC) Value Test Conditions Unit Min Typ Max Symbol Input Leakage Current |ILI| VIN = 0 V to VCC Output Leakage Current |ILO| VOUT = 0 V to VCC, CE1 = VIH or OE = VIH ICC CE1 = 0.2 V, CE2 = VCC−0.2 V, Iout = 0 mA* Supply Current 1 ⎯ ⎯ 10 µA ⎯ ⎯ 10 µA ⎯ ⎯ 10 mA ⎯ 10 100 µA VCC x 0.8 ⎯ ⎯ V ⎯ ⎯ 0.4 V CE1 ≥ VCC−0.2 V Standby Current ISB CE2 ≤ 0.2 V*2 OE ≥ VCC−0.2 V, WE ≥ VCC−0.2 V*2 LB ≥ VCC−0.2 V, UB ≥ VCC−0.2 V*2 Output Voltage (high) VOH IOH = −2.0 mA Output Voltage (low) VOL IOL = 2.0 mA *1 : Iout : Output current *2 : All other inputs (CE1, CE2, OE, WE, LB, UB) should be at CMOS levels, i.e., H ≥ VCC − 0.2 V, L ≤ 0.2 V. 2. AC TEST CONDITIONS Supply Voltage : 3.0 V to 3.6 V Operating Temperature : −20 oC to +85 oC Input Voltage Amplitude : 0.3 V to 2.7 V Input Rising Time : 10 ns Input Falling Time : 10 ns Input Evaluation Level : 2.0 V / 0.8 V Output Evaluation Level : 2.0 V / 0.8 V Output Impedance : 50 pF (1) Read Operation (VCC = 3.0 V to 3.6 V, TA = −20 oC to +85 oC) Parametere 6 symbol Value Min Max unit Read Cycle time tRC 250 ⎯ ns CE1 Active Time tCA1 210 2,000 ns CE2 Active Time tCA2 210 2,000 ns OE Active Time tRP 210 2,000 ns LB, UB Active Time tBP 210 2,000 ns Pre-charge Time tPC 40 ⎯ ns Address Setup Time tAS 10 ⎯ ns Address Hold Time tAH 50 ⎯ ns OE Setup Time tES 10 ⎯ ns LB, UB Setup Time tBS 10 ⎯ ns CE1 Access Time tCE1 ⎯ 100 ns CE2 Access Time tCE2 ⎯ 100 ns OE Access Time tOE ⎯ 100 ns OE Output Floating Time tOHZ ⎯ 25 ns MB85R1002 (2) Write Operation (VCC = 3.0 V to 3.6 V, TA = −20 oC to +85 oC) Parameter Symbol Value Min Max Notes Write Cycle Time tWC 250 ⎯ ns CE1 Active Time tCA1 210 2,000 ns CE2 Active Time tCA2 210 2,000 ns LB, UB Active Time tBP 210 2,000 ns Pre-Charge Time tPC 40 ⎯ ns Address Setup Time tAS 10 ⎯ ns Address Hold Time tAH 50 ⎯ ns LB, UB Setup Time tBS 10 ⎯ ns Write Pulse Width tWP 210 ⎯ ns Data Setup Time tDS 10 ⎯ ns Data Hold Time tDH 50 ⎯ ns Write Setup Time tWS 0 ⎯ ns (3) Power ON/OFF Sequence Value Symbol Min Typ Max CE1 LEVEL holding time in Power OFF tpd 85 ⎯ ⎯ ns CE1 LEVEL holding time in Power ON tpu 85 ⎯ ⎯ ns Power interval * tpi 0.5 ⎯ ⎯ s Parameter Units * : Condition for power detection circuit to function 3. Pin Capacitance (f = 1 MHz, TA = +25 oC) Parameter Input Capacitance Output Capacitance Symbol CIN COUT Test Condition Value Unit Min Typ Max VIN = GND ⎯ ⎯ 10 pF VOUT = GND ⎯ ⎯ 10 pF 4. Reliability Data retention 10 years (TA = 0 °C to +55 °C) Access endurance 1010 times (TA = −20 °C to +85 °C) 7 MB85R1002 ■ TIMING DIAGRAMS 1. Read Cycle Timing 1 (CE1, CE2 Control) tRC tCA1 tCE1 tPC CE1 CE2 tCE2 tBS tBP LB, UB tAS A0 to A15 tAH Valid tES tRP OE tOHZ tOE I/O1 to I/O16 High-Z Valid 2. Read Cycle Timing (OE Control) tRC tCA1 tPC CE1 CE2 tCA2 tBP tBS LB, UB tAS A0 to A15 tAH Valid tRP OE tOHZ tOE I/O1 to I/O16 8 High-Z Valid MB85R1002 3. Write Cycle Timing 1 (CE1, CE2 Control) tWC tCA1 tPC CE1 CE2 tCA2 tBP tBS LB, UB tAS A0 to A15 tAH Valid tWS tWP WE OE tDS tDH Valid Data In 4. Write Cycle Timing 1 (WE Control) tWC tCA1 tPC CE1 CE2 tCA2 tBP tBS LB, UB tAS A0 to A15 tAH Valid WE OE tWP tDS tDH Data In Valid 9 MB85R1002 ■ POWER ON/OFF SEQUENCE tpd tpi tpu VCC VCC CE2 CE2 3.0 V 3.0 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) VIL (Max) CE2 ≤ 0.2 V GND GND CE1 > VCC × 0.8* CE1 : Don't Care CE1 > VCC × 0.8* CE1 CE1 * : CE1 (Max) < VCC + 0.5 V ■ NOTES ON USE After IR reflow, the hold of data that was written before IR reflow is not guaranteed. ■ ORDERING INFOMATION Part number MB85R1002PFTN 10 Package 48-pin plastic TSOP(1) (FPT-48P-M25) Remarks MB85R1002 ■ PACKAGE DIMENTION Note 1) Note 2) Note 3) Note 4) 48-pin plastic TSOP(1) (FPT-48P-M25) *1 : Resin protrusion. (Each side : +0.15 (.006) Max). *2 : These dimensions do not include resin protrusion. Pins width and pins thickness include plating thickness. Pins width do not include tie bar cutting remainder. 0.10±0.05 (Stand off) (.004±.002) LEAD No. 1 48 0.50(.020) INDEX +0.05 0.22 –0.04 +.002 .009 –.002 *1 12.00±0.10 (.472±.004) 24 0.10(.004) M 25 1.13±0.07 (Mounting height) (.044±.003) 14.00±0.20(.551±.008) Details of "A" part *2 12.40±0.10(.488±.004) "A" 0˚~8˚ +0.05 0.08(.003) C 0.145 –0.03 +.002 .006 –.001 0.25(.010) 0.60±0.15 (.024±.006) 2003 FUJITSU LIMITED F48043S-c-2-2 Dimensions in mm (inches). Note: The values in parentheses are reference values. 11 MB85R1002 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. 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