HMC757LP4E v00.0610 Amplifiers - Linear & Power - SMT 9 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications Features The HMC757LP4E is ideal for: Saturated Output Power: 27.5 dBm @ 21% PAE • Point-to-Point Radios High Output IP3: 34.5 dBm • Point-to-Multi-Point Radios High Gain: 20.5 dB • VSAT DC Supply: +5V @ 400 mA • Military & Space No External Matching Required 24 Lead 4x4 mm SMT Package: 16 mm² Functional Diagram General Description The HMC757LP4E is a three stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757LP4E provides 20.5 dB of gain, and 27.5 dBm of saturated output power and 21% PAE from a +5V supply. The RF I/Os are DC blocked and matched to 50 Ohms. The 4x4 mm plastic package eliminates the need for wirebondig, and is compatible with surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 400mA [1] Parameter Min. Frequency Range Gain 18.5 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Typ. 16 - 24 (IP3)[2] Total Supply Current (Idd) 24.5 Max. Units GHz 20.5 dB 0.028 dB/ °C 11 dB 12 dB 26.5 dBm 27.5 dBm 34.5 dBm 400 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 400 mA typical. [2] Measurement taken at Pout / Tone = +16 dBm 9-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 28 30 +25C +85C -40C 20 10 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 24 20 9 -10 16 12 -30 12 14 16 18 20 22 FREQUENCY (GHz) 24 26 16 28 22 24 Output Return Loss vs. Temperature 0 0 +25C +85C -40C -4 RETURN LOSS (dB) +25C +85C -40C -4 -8 -12 -16 -8 -12 -16 -20 -24 -20 16 18 20 22 16 24 18 P1dB vs. Temperature 22 24 P1dB vs. Supply Voltage 33 29 31 P1dB (dBm) 31 27 25 +25C +85C -40C 23 20 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 20 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 18 5V 6V 7V Amplifiers - Linear & Power - SMT -20 29 27 25 21 23 16 18 20 FREQUENCY (GHz) 22 24 16 18 20 22 24 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-2 HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Psat vs. Temperature Psat vs. Supply Voltage 33 33 +25C +85C -40C Psat (dBm) 31 29 27 25 27 5V 6V 7V 23 16 18 20 22 24 16 18 FREQUENCY (GHz) 22 24 22 24 Psat vs. Supply Current (Idd) 31 31 29 29 Psat (dBm) P1dB (dBm) P1dB vs. Supply Current (Idd) 27 25 350mA 375mA 400mA 23 20 FREQUENCY (GHz) 27 350mA 375mA 400mA 25 23 21 21 16 18 20 22 24 16 18 FREQUENCY (GHz) 20 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +16 dBm Output IP3 vs. Supply Current, Pout/Tone = +16 dBm 45 45 +25C +85C -40C 350mA 375mA 400mA 40 IP3 (dBm) 40 35 30 35 30 25 25 16 18 20 FREQUENCY (GHz) 9-3 29 25 23 IP3 (dBm) Amplifiers - Linear & Power - SMT 9 Psat (dBm) 31 22 24 16 18 20 22 24 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +16 dBm Output IM3 @ Vdd = +5V 70 45 60 5.0V 6.0V 7.0V 16 GHz 18 GHz 20 GHz 22 GHz 24 GHz 50 IM3 (dBc) IP3 (dBm) 40 35 40 9 30 20 30 0 25 16 18 20 22 5 24 7 9 11 Output IM3 @ Vdd = +6V 17 19 21 23 21 23 70 60 60 16 GHz 18 GHz 20 GHz 22 GHz 24 GHz 16 GHz 18 GHz 20 GHz 22 GHz 24 GHz 50 IM3 (dBc) 50 IM3 (dBc) 15 Output IM3 @ Vdd = +7V 70 40 30 40 30 20 20 10 10 0 0 5 7 9 11 13 15 17 19 21 23 5 7 9 Pout/TONE (dBm) 0 30 -10 Pout Gain PAE 15 17 19 +25C +85C -40C ISOLATION (dB) -20 20 15 10 -30 -40 -50 -60 5 0 -18 13 Reverse Isolation vs. Temperature 35 25 11 Pout/TONE (dBm) Power Compression @ 20 GHz Pout (dBm), GAIN (dB), PAE (%) 13 Pout/TONE (dBm) FREQUENCY (GHz) Amplifiers - Linear & Power - SMT 10 -70 -80 -13 -8 -3 2 INPUT POWER (dBm) 7 12 16 18 20 22 24 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-4 HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Gain & Power vs. Supply Current @ 20 GHz Gain & Power vs. Supply Voltage @ 20 GHz Gain (dB), P1dB (dBm), Psat (dBm) 35 30 25 20 Gain P1dB Psat 15 10 350 30 25 Gain P1dB Psat 20 15 10 360 370 380 390 400 5 5.5 6 Idd (mA) 6.5 7 Vdd (V) Power Dissipation 2.5 POWER DISSIPATION (W) Amplifiers - Linear & Power - SMT 9 Gain (dB), P1dB (dBm), Psat (dBm) 35 16 GHz 18 GHz 20 GHz 22 GHz 24 GHz 2.3 2.1 1.9 1.7 1.5 -18 -14 -10 -6 -2 2 6 10 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) 7V RF Input Power (RFIN) Channel Temperature Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 23 dBm +5.0 400 150 °C +5.5 400 +6.0 400 Continuous Pdiss (T= 85 °C) (derate 40 mW/°C above 85 °C) 2.7 W Thermal Resistance (channel to exposed ground paddle) 24.85 C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 400 mA at +5.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 9-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. Package Information Part Number Package Body Material Lead Finish HMC757LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H757 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT 9 9-6 HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Pin Descriptions Amplifiers - Linear & Power - SMT 9 9-7 Pin Number Function Description 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 GND These pins and package bottom must be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 8 - 11, 20, 22 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 21 Vdd Drain bias for amplifier. External bypass caps 100pF, 0.1uF and 4.7uF are required 23 Vgg Gate control for PA. Adjust Vgg to achieve recommended bias current. External bypass caps 100pF, 0.1uF and 4.7uF are required. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC757LP4E v00.0610 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Evaluation PCB List of Materials for Evaluation PCB 131216 [1] Item Description J1, J2 2.9 mm Connectors J3, J4 DC Pins C1, C16 100 pF Capacitor, 0402 Pkg. C5, C17 10 kpF Capacitor, 0402 Pkg. C9, C18 4.7 µF Capacitor, 0402 Pkg. U1 HMC757LP4E Power Amplifier PCB [2] 125559 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT 9 9-8