ES1A THRU ES1M Features • • • • • For Surface Mount Applications 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250°C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings • • • Operating Temperature: -50°C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 15 °C/W Junction To Lead Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES1A ES1A 50V 35V 50V ES1B ES1B 100V 70V 100V ES1C ES1C 150V 105V 150V 200V 140V 200V ES1D ES1D ES1G ES1G 400V 280V 400V ES1J ES1J 600V 420V 600V ES1K ES1K 800V 560V 800V ES1M 1000V 700V 1000V ES1M DO-214AC (SMAJ) (High Profile) H Cathode Band J A E ES1A-D ES1G-K ES1M Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time ES1A-D ES1G-K ES1M Typical Junction Capacitance IF(AV) 1.0A D G TJ = 75°C IFSM 30A 8.3ms, half sine VF .975V 1.35V 1.60V IFM = 1.0A; TJ = 25°C* IR 5µA 100µA TJ = 25°C TJ = 100°C Trr 50ns 60ns 100ns CJ 45pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V B F Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage C DIMENSIONS DIM A B C D E F G H J INCHES MIN .078 .067 .002 --.035 .065 .205 .160 .100 MM MIN 1.98 1.70 .05 --.89 1.65 5.21 4.06 2.57 MAX .116 .089 .008 .02 .055 .096 .224 .180 .112 MAX 2.95 2.25 .20 .51 1.40 2.45 5.69 4.57 2.84 SUGGESTED SOLDER PAD LAYOUT 0.090” 0.085” 0.070” *Pulse test: Pulse width 200 µsec, Duty cycle 2% １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ NOTE ES1A THRU ES1M Figure 1 Typical Forward Characteristics 20 Figure 2 Forward Derating Curve 10 2.4 6 2.2 4 2.0 1.8 2 1.6 25°C Amps 1.4 1 1.2 .6 Amps .4 1.0 .8 .6 .2 .4 Single Phase, Half Wave .2 60Hz Resistive or Inductive Load .1 .06 0 .04 25 50 75 100 125 150 °C Average Forward Rectified Current - Amperesversus Ambient Temperature - °C .02 .01 0 .2 .4 .6 .8 1.2 1.0 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 100 60 40 20 pF TJ=25°C 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 Junction Capacitance - pFversus Reverse Voltage - Volts ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ES1A thru ES1M Figure 4 Peak Forward Surge Current 30 Figure 5 New SMA Assembly 25 20 15 Amps 10 Round Lead Process 5 0 1 2 4 6 8 10 20 40 60 80 100 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Ω 10Ω trr +0.5A 0 Pulse Generator Note 2 25Vdc 1Ω Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive 3