HTSEMI S9014

S901 4
TRANSISTOR (NPN)
SOT-23
1. BASE
FEATURES
Complementary to S9015
z
2. EMITTER
3. COLLECTOR
MARKING: J6
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.1
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA,
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=0
MIN
TYP
MAX
UNIT
50
V
IC= 0.1mA, IB=0
45
V
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=50 V , IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=35V ,
IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 3V ,
IC=0
0.1
μA
DC current gain
hFE
VCE=5V,
IC= 1mA
200
1000
Collector-emitter saturation voltage
VCE(sat)
IC=100 mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100 mA, IB= 5mA
1
V
fT
VCE=5V, IC= 10mA
f=30MHz
Transition frequency
CLASSIFICATION OF
Rank
Range
150
MHz
hFE
L
H
200-450
450-1000
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
S901 4
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05