VN2001L Vishay Siliconix New Product N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 200 VGS(th) (V) rDS(on) Max (W) 1.2 @ VGS = 10 V ID (A) 0.56 2 to 4 1.3 @ VGS = 6 V 0.54 D TrenchFETr Power MOSFET APPLICATIONS D CRT Monitor HD Drive Circuit D H-Drive Trans Switching TO-226AA (TO-92) S 1 G 2 D Device Marking Front View “S” VN 2001L xxyy “S” = Siliconix Logo xxyy = Date Code 3 Top View Ordering Information: VN2001L-TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limits Drain-Source Voltage VDS 200 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) Pulsed Drain TA= 25_C TA = 70_C Currenta Avalanche Current Single Pulse Avalanche Energy Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TA= 25_C TA = 70_C ID V 0.56 0.45 IDM 2 IAS 1.5 EAS 0.11 PD Unit 0.8 0.51 A mJ W RthJA 156 _C/W TJ, Tstg −55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 72654 S-40246—Rev. A, 16-Feb-04 www.vishay.com 1 VN2001L Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 100 mA 200 VGS(th) VDS = VGS, ID = 250 mA 2.0 3.0 4.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 200 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On Drain-Source On-Resistance Resistancea Forward Transconductancea Diode Forward Voltagea nA mA 10 TJ = 55_C VDS = 10 V, VGS = 10 V 1 A VGS = 10 V, ID = 0.56 A 0.95 1.2 VGS = 6 V, ID = 0.54 A 1.0 1.3 gfs VDS = 10 V, ID = 0.56A 1.8 VSD IS = 0.5 A, VGS = 0 V 0.8 1.2 3.6 6 rDS(on) DS( ) V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.2 Gate Resistance Rg 4 Turn-On Delay Time VDS = 90 V, VGS = 10 V, ID = 0.5 A 0.8 td(on) Rise Time VDD = 100 V, RL = 200 W ID ^ 0.5 05A A, VGEN = 10 V RG = 25 W tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 0.5 A, di/dt = 100 A/ms nC W 5.5 10 10 16 22 40 18 30 28 45 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1.4 2.0 VGS = 10 thru 5 V 1.2 4.5 V I D − Drain Current (A) I D − Drain Current (A) 1.6 1.2 0.8 4V 0.4 1.0 0.8 0.6 TJ = 125_C 0.4 25_C 0.2 3.5 V −55_C 0.0 0.0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72654 S-40246—Rev. A, 16-Feb-04 VN2001L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 250 1.60 200 1.20 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 2.00 VGS = 4.5 V VGS = 10 V 0.80 0.40 0.00 0.0 Ciss 150 100 50 Crss 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 ID − Drain Current (A) Gate Charge 60 80 100 On-Resistance vs. Junction Temperature 2.2 VDS = 90 V ID = 0.56 A r DS(on) − On-Resistance ( W) (Normalized) V GS − Gate-to-Source Voltage (V) 40 VDS − Drain-to-Source Voltage (V) 10 8 6 4 2 0 0.0 Coss VGS = 10 V ID = 0.56 A 1.8 1.4 1.0 0.6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.2 −50 4.0 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 2 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 1 TJ = 150_C 0.1 TJ = 25_C 0.01 0.001 0.0 4 ID = 0.56 A 3 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72654 S-40246—Rev. A, 16-Feb-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 VN2001L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Safe Operating Area 10 0.6 rDS(on) Limited 0.4 1 ID = 250 mA I D − Drain Current (A) V GS(th) Variance (V) 0.2 IDM Limited −0.0 −0.2 −0.4 −0.6 0.1 100 ms ID(on) Limited 1 ms 10 ms 0.01 TA = 25_C Single Pulse 100 ms −0.8 BVDSS Limited −1.0 −50 1s dc 0.001 −25 0 25 50 75 100 125 150 0.1 TJ − Temperature (_C) 1 10 100 1000 VDS − Drain-to-Source Voltage (V) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.01 3. TJM − TA = PDMZthJA(t) Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 t1 − Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72654 S-40246—Rev. A, 16-Feb-04