BSO330N02K G OptiMOS™2 Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • Qualified according to JEDEC1) for target applications • Super Logic level 2.5V rated; N-channel R DS(on),max 20 V V GS=4.5 V 30 mΩ V GS=2.5 V 50 ID 6.5 • Dual n-channel A PG-DSO-8 • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSO330N02K PG-DSO-8 330N2K Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Value Symbol Conditions ID Unit 10 secs steady state V gs=4.5V, T C=25 °C2) 6.5 5.4 V gs=4.5V, T C=70 °C2) 5.2 4.3 V gs=2.5V, T C=25 °C2) 5.1 4.2 V gs=2.5V, T C=70 °C2) 4 3.3 A A Pulsed drain current I D,pulse T C=25 °C3) 26 Avalanche energy, single pulse E AS I D=6.5 A, R GS=25 Ω 19 mJ Reverse diode dv /dt dv /dt I D=6.5 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot ±12 T A=25 °C2) T A=25 °C1) Operating and storage temperature T j, T stg 1.4 W 2.5 -55 ... 150 °C 0 (0V to 250V) ESD Class Rev.1.02 2.0 V page 1 2010-05-12 55/150/56 IEC climatic category; DIN IEC 68-1 Rev.1.02 page 2 2010-05-12 BSO330N02K G Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA - - 50 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area2), t p≤10 s - - 63 6 cm2 cooling area2), steady state - - 90 20 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 0.7 0.95 1.2 Zero gate voltage drain current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 V DS=20 V, V GS=0 V, T j=125 °C - - 100 V µA Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=5.1 A - 38 50 mΩ V GS=4.5 V, I D=6.5 A - 24 30 - 1.3 - Ω 10 20 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=6.5 A J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.1.02 page 3 2010-05-12 BSO330N02K G Parameter Values Symbol Conditions Unit min. typ. max. - 550 730 - 190 250 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=10 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss - 26 39 Turn-on delay time t d(on) - 7.4 - Rise time tr - 16.8 - Turn-off delay time t d(off) - 13.4 - Fall time tf - 2.8 - Gate to source charge Q gs - 1.2 1.6 Gate charge at threshold Q g(th) - 0.5 0.7 Gate to drain charge Q gd - 0.7 1.1 Switching charge Q sw - 1.4 2 Gate charge total Qg - 3.7 4.9 Gate plateau voltage V plateau - 2.2 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 3.4 4.5 Output charge Q oss V DD=10 V, V GS=0 V - 2.6 3.4 - - 1.5 - - 26 V DD=10 V, V GS=4.5 V, I D=6.5 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=10 V, I D=6.5 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=6.5 A, T j=25 °C - 0.88 1.2 V Reverse recovery time t rr V R=10 V, I F=6.5 A, di F/dt =100 A/µs - 14 - ns Reverse recovery charge Q rr V R=10 V, I F=6.5 A, di F/dt =100 A/µs - 4.8 - nC 4) Rev.1.02 T C=25 °C A See figure 16 for gate charge parameter definition page 4 2010-05-12 BSO330N02K G 1 Power dissipation 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); V GS≥4.5 V; t p≤10 s 7 2.5 6 2 5 1.5 I D [A] P tot [W] 4 3 1 2 0.5 1 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p)2) parameter: t p parameter: D =t p/T 102 102 0.5 1 µs 10 µs 100 µs 10 0.2 1 1 ms 101 100 ms 100 DC 0.1 0.05 Z thJA [K/W] I D [A] 10 ms 0.02 0.01 10 10 160 T A [°C] 0 -1 single pulse 10-2 10 10-1 -1 10 0 10 1 10 2 V DS [V] Rev.1.02 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t p [s] page 5 2010-05-12 BSO330N02K G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 30 60 2V 2.2 V 4V 50 3V R DS(on) [mΩ] 40 I D [A] 20 2.5 V 2.5 V 2.4 V 10 3V 30 3.5 V 4.5 V 4V 20 2.2 V 10 2V 1.8 V 1.6 V 0 0 1 2 0 3 0 4 8 V DS [V] 12 16 20 16 20 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 20 30 16 20 I D [A] g fs [S] 12 8 10 4 150 °C 25 °C 0 0 0 1 2 3 V GS [V] Rev.1.02 0 4 8 12 I D [A] page 6 2010-05-12 BSO330N02K G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=6.5 A; V GS=4.5 V V GS(th)=f(T j); V GS=V DS 50 1.6 40 98% 30 V GS(th) [V] R DS(on) [mΩ] 1.2 typ 20 200 µA 20 µA 0.8 0.4 10 0 0 -60 -20 20 60 100 140 -60 -20 20 T j [°C] 60 100 140 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 102 Ciss 101 10 25 °C I F [A] C [pF] Coss 2 150 °C, 98% 150 °C 100 25 °C, 98% Crss 101 10-1 0 5 10 15 20 V DS [V] Rev.1.02 0 0.5 1 1.5 2 V SD [V] page 7 2010-05-12 BSO330N02K G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=6.5 A pulsed parameter: T j(start) parameter: V DD 101 5 25 °C 4 16 V 100 °C 10 V 4V V GS [V] I AV [A] 3 125 °C 100 2 1 10-1 0 100 101 102 103 0 1 t AV [µs] 2 3 4 5 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 24 V GS Qg V BR(DSS) [V] 22 20 V g s(th) 18 Q g(th) Q sw Q gs 16 -60 -20 20 60 100 Q g ate Q gd 140 T j [°C] Rev.1.02 page 8 2010-05-12 BSO330N02K G Package Outline PG-TDSON-8 PG-DSO-8: Outline Rev.1.02 page 9 2010-05-12