INFINEON IPP052N06L3G

Type
IPB049N06L3 G IPP052N06L3 G
OptiMOS™3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
V DS
60
V
R DS(on),max (SMD)
4.7
mΩ
ID
80
A
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB049N06L3 G
IPP052N06L3 G
Package
PG-TO263-3
PG-TO220-3
Marking
049N06L
052N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
80
T C=100 °C
80
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse4)
E AS
I D=80 A, R GS=25 Ω
77
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
115
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
1)
2)
J-STD20 and JESD22
Current is limited by bondwire; with an R thJC=1.3 K/W the chip is able to carry 114 A.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev. 2.4
T C=25 °C
page 1
2010-01-13
IPB049N06L3 G IPP052N06L3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.3
minimal footprint
-
-
62
6 cm² cooling area 5)
-
-
40
60
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=58 µA
1.2
1.7
2.2
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=80 A
-
4.2
5
mΩ
V GS=4.5 V, I D=40 A
-
5.7
8.3
V GS=10 V, I D=80 A,
(SMD)
-
3.9
4.7
V GS=4.5 V, I D=40 A,
(SMD)
-
5.4
8
-
1.2
-
Ω
58
116
-
S
Drain-source on-state resistance
R DS(on)
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=80 A
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.4
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2010-01-13
IPB049N06L3 G IPP052N06L3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
6300
8400
-
1100
1500
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
47
-
Turn-on delay time
t d(on)
-
11
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
56
-
Fall time
tf
-
12
-
Gate to source charge
Q gs
-
23
-
Gate to drain charge
Q gd
-
7
-
-
19
-
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=80 A, R G=3.3 Ω
pF
ns
Gate Charge Characteristics 6)
V DD=30 V, I D=80 A,
V GS=0 to 4.5 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
37
50
Gate plateau voltage
V plateau
-
3.6
-
Output charge
Q oss
-
54
72
nC
-
-
80
A
-
-
320
-
1.0
1.2
V
-
48
-
ns
-
60
-
nC
V DD=30 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
6)
Rev. 2.4
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
V R=30 V, I F=80A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
page 3
2010-01-13
IPB049N06L3 G IPP052N06L3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
120
100
100
80
80
I D [A]
P tot [W]
60
60
40
40
20
20
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
102
100 µs
100
10 ms
101
0.5
Z thJC [K/W]
I D [A]
1 ms
DC
0.2
0.1
10-1
0.05
0.02
0.01
100
single pulse
10-1
10-1
10-2
100
101
102
V DS [V]
Rev. 2.4
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2010-01-13
IPB049N06L3 G IPP052N06L3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
320
14
7V
10 V
5V
6V
280
3V
12
4.5 V
4V
3.5 V
5V
240
10
4.5 V
R DS(on) [mΩ]
I D [A]
200
160
4V
120
8
6
6V
7V
10 V
4
80
3.5 V
2
40
3V
0
0
0
1
2
3
4
5
0
80
160
V DS [V]
240
320
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
160
180
140
160
120
140
100
g fs [S]
I D [A]
120
100
80
80
60
60
40
40
175 °C
25 °C
20
20
0
0
0
2
4
6
Rev. 2.4
0
50
100
150
I D [A]
V GS [V]
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2010-01-13
IPB049N06L3 G IPP052N06L3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=80 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
12
3
10
2.5
8
2
V GS(th) [V]
R DS(on) [mΩ]
parameter: I D
max
6
580 µA
1.5
58µA
typ
4
1
2
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
175 °C, 98%
103
102
Coss
175 °C
I F [A]
C [pF]
25 °C
102
25 °C, 98%
101
Crss
101
100
0
20
40
60
V DS [V]
Rev. 2.4
0
0.5
1
1.5
2
V SD [V]
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2010-01-13
IPB049N06L3 G IPP052N06L3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=80 A pulsed
parameter: T j(start)
parameter: V DD
100
12
48 V
10
100 °C
150 °C
12 V
25 °C
30 V
I AS [A]
V GS [V]
8
10
6
4
2
0
1
0.1
1
10
100
0
1000
20
40
60
80
100
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
V BR(DSS) [V]
65
60
V g s(th)
55
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.4
page 7
2010-01-13
IPB049N06L3 G IPP052N06L3 G
PG-TO220-3
Rev. 2.4
page 8
2010-01-13
IPB049N06L3 G IPP052N06L3 G
PG-TO263 (D²-Pak)
Rev. 2.4
page 9
2010-01-13
IPB049N06L3 G IPP052N06L3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.4
page 10
2010-01-13