PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS® FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. Features • Thermally-enhanced, lead-free and RoHS-compliant packaging Three-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz Efficiency ACP Up ACP Low ALT Up Drain Efficiency (%) 40 35 -38 -42 -46 30 -50 25 -54 20 -58 15 -62 Efficiency 10 -66 5 -70 0 -74 30 32 34 36 38 40 Adj. Ch. Power Ratio (dBc) 45 PTFA240451E Package H-30265-2 42 Output Power, Avg. (dBm) • Broadband internal matching • Typical two-carrier CDMA performance at 2450 MHz, 28 V - Average output power = 10 W - Linear Gain = 14 dB - Efficiency = 27% - Adjacent channel power = –45 dBc • Typical CW performance, 2450 MHz, 28 V - Output power at P–1dB = 50 W - Efficiency = 54% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power RF Characteristics 3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz bandwidth at ƒC ± 2.135 MHz offset Characteristic Symbol Min Typ Max Unit Gain Gps — 14 — dB Drain Efficiency ηD — 31 — % ACPR — –45 — dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 04, 2008-03-04 PTFA240451E RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 2480 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 13.5 14 — dB Drain Efficiency ηD 39 40 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.17 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 196 W 1.12 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 0.89 °C/W Ordering Information Type and Version Package Outline Package Description Marking PTFA240451E H-30265-2 Thermally-enhanced slotted flange, single-ended PTFA240451E Data Sheet V1 2 of 10 Rev. 04, 2008-03-04 PTFA240451E Typical Performance (data taken in a production test fixture) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) VDD = 28 V, IDQ = 450 mA, ƒ1 = 2449 MHz, ƒ 2 = 2450 MHz -20 57 16 Efficiency -30 5th Order Gain (dB) IMD (dBc) -40 -50 -60 7th Order Gain 13 -80 32 34 36 38 40 42 53 14 -70 30 55 15 3rd Order 12 2420 44 51 Output Power 2430 2440 2450 2460 2470 49 2480 Efficiency (%), Output Power (W) VDD = 28 V, IDQ = 450 mA Frequency (MHz) Output Power, Avg. (dBm) IM3 vs. Output Power for Selected Biases 2-Tone Broadband Performance VDD = 28 V, ƒ 1 = 2449 MHz, ƒ 2 = 2450 MHz VDD = 28 V, IDQ = 450 mA, POUT Avg. = 43.52 dBm -20 50 -5 337 m A -40 -50 562 m A 450 m A -60 -70 30 32 34 36 38 40 42 -10 30 -15 20 -20 Gain 10 -25 Return Loss 0 2400 44 Output Power, Avg. (dBm ) Data Sheet 40 Return Loss (dB) IMD (dBc) -30 Gain (dB), Efficiency (%) Efficiency 2420 2440 2460 2480 -30 2500 Frequency (MHz) 3 of 10 Rev. 04, 2008-03-04 PTFA240451E Typical Performance (cont.) Power Sweep Gain & Efficiency vs. Output Power VDD = 28 V, ƒ = 2450 MHz VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz IDQ = 675 mA 50 15 15.0 Gain 14.5 IDQ = 450 mA 13.5 14 40 13 30 12 12.5 20 Efficiency 13.0 10 11 IDQ = 225 mA 12.0 0 10 30 32 34 36 38 40 42 44 46 48 30 34 Output Power (dBm) 38 46 50 Output Power (dBm) IS-95 CDMA Performance Output Power (at 1 dB Compression) vs. Supply Voltage VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz IDQ = 450 mA, ƒ = 2450 MHz TCASE = 25°C TCASE = 90°C 35 49 Drain Efficiency (%) 48 47 46 -35 ACP ƒ C–0.75 MHz 30 Output Power (dBm) 42 -40 -45 25 Efficiency -50 20 -55 15 -60 10 -65 5 -70 ACPR ƒ C+1.98 MHz 0 45 24 26 28 30 Supply Voltage (V) Data Sheet -75 30 32 32 34 36 38 40 Adj. Channel Power Ratio (dBc) 14.0 Gain (dB) Power Gain (dB) 60 16 15.5 Drain Efficiency (%) 16.0 42 Output Power, Avg. (dBm) 4 of 10 Rev. 04, 2008-03-04 PTFA240451E Typical Performance (cont.) WiMAX Performance VDD = 28 V, IDQ = 0.45 A, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 36 -15 Efficiency 30 -20 ƒ = 2.62 GHz ƒ = 2.68 GHz 24 -25 ƒ = 2.65 GHz 0.09 A 0.28 A 1.02 0.46 A 1.01 0.70 A 1.00 1.39 A 0.99 2.09 A Efficiency (%) Normalized Bias Voltage (V) 1.03 2.78 A 0.98 3.48 A 0.97 18 -30 12 -35 6 -40 EVM (dBc) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 4.17 A 0.96 0.95 -20 0 0 20 40 60 80 100 -45 15 Case Temperature (°C) 20 25 30 35 40 45 Output Power (dBm) WiMAX Performance VDD = 28 V, ƒ = 2450 MHz (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -15 EVM (dB) -20 IDQ = 0.28 A -25 IDQ = 0.67 A -30 -35 IDQ = 0.45 A -40 -45 15 20 25 30 35 40 45 Output Power (dBm) Data Sheet 5 of 10 Rev. 04, 2008-03-04 PTFA240451E Broadband Circuit Impedance Z Source Ω Frequency jX 2400 22.12 –18.74 6.98 –2.35 2420 20.27 –18.71 6.73 –2.14 2450 18.30 –19.18 6.61 –2.17 2480 15.24 –19.95 6.17 –2.32 2500 13.45 –20.19 5.92 –2.41 Z Load 2500 MHz 0.5 R 0.1 0 .0 DT OW ARD L OA GTHS E LEN jX 2400 MHz 0.1 Z Source WAV <--- - W AVE L S R 0.4 G MHz 0.3 Z Load 0.2 D Z Source Z Load Ω 2400 MHz 0. 2 2500 MHz Z0 = 50 Ω See next page for circuit information Data Sheet 6 of 10 Rev. 04, 2008-03-04 PTFA240451E Reference Circuit C1 0.001µF R2 1.2KV QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF C3 0.001µF R3 2KV R4 2KV R5 5.1KV R6 10V C4 10 µF 35V C5 .1µF L1 R7 5.1KV C6 .1µF C7 .01µF C8 4.5pF l4 R8 10V l1 l2 C12 1µF C13 .1µF l8 C9 4.5pF RF_IN C11 4.5pF C20 4.5pF DUT l3 l5 l6 l7 l 10 C10 1.8pF VDD C14 10µF 50V l 11 l 12 l 13 l14 RF_OUT C19 1.2pF l9 a2 4045 1ef _sch R1 1.3KV L2 C15 4.5pF C16 1µF C17 .1µF C18 10µF 50V Reference circuit schematic for ƒ = 2480 MHz Circuit Assembly Information DUT PTFA240451E PCB 0.76 mm [.030"] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8, l9 l10 l11 (taper) l12 l13 l14 Electrical Characteristics at 2480 MHz1 0.102 0.050 0.094 0.148 0.016 0.021 0.080 0.295 0.049 0.079 0.045 0.117 0.058 LDMOS Transistor Rogers TMM4 2 oz. copper Dimensions: L x W (mm) Dimensions: L x W (in.) λ, 50.0 Ω λ, 44.0 Ω λ, 44.0 Ω λ, 64.0 Ω λ, 44.0 Ω λ, 14.7 Ω λ, 8.2 Ω λ, 50.0 Ω λ, 6.5 Ω λ, 6.5 Ω / 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω 6.68 x 1.40 3.12 x 1.78 6.10 x 1.78 9.86 x 0.89 1.04 x 1.78 1.35 x 7.62 4.78 x 14.86 19.30 x 1.40 2.84 x 19.05 5.16 x 19.05 / 1.40 2.95 x 1.40 7.62 x 1.40 3.81 x 1.40 0.263 0.123 0.240 0.388 0.041 0.053 0.188 0.760 0.112 0.203 0.116 0.300 0.150 x 0.055 x 0.070 x 0.070 x 0.035 x 0.070 x 0.300 x 0.585 x 0.055 x 0.750 x 0.750 / 0.055 x 0.055 x 0.055 x 0.055 1Electrical characteristics are rounded. Data Sheet 7 of 10 Rev. 04, 2008-03-04 PTFA240451E Reference Circuit (cont.) R3 C3 C1 R4 C4 10 + 35V R6 R2 R1 QQ1 C2 Q1 R7 C6 LM C11 C12 V DD L1 R5 C5 C14 V DD C7 C8 C9 C13 R8 C19 C10 C20 V DD C17 L2 C18 C16 A240451in_01 A240451out_01 a 24045 1ef _assy C15 Reference circuit assembly diagram* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C6, C13, C17 C7 C8, C9, C11, C15, C20 C10 C12, C16 C14, C18 C19 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 0.01 µF Ceramic capacitor, 4.5 pF Digi-Key Digi-Key Digi-Key ATC ATC PCC1772CT-ND PCS6106TR-ND PCC104BCT-ND 200B 103 100B 4R5 Ceramic capacitor, 1.8 pF Capacitor, 1 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 1.2 pF Ferrite Transistor Voltage regulator Chip resistor, 1.3 k-ohms Chip resistor, 1.2 k-ohms Chip resistor, 2 k-ohms Potentiometer, 2 k-ohms Chip resistor, 5.1 k-ohms Chip resistor, 10 ohms ATC ATC Garrett Electronics ATC Philips Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 1R8 920C105KW TPSE106K050R0400 100B 1R2 BDS46/3.8.8-452 BCP56 LM7805 P1.3KGCT-ND P1.2KGCT-ND P2.0KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber Files for this circuit available on request Data Sheet 8 of 10 Rev. 04, 2008-03-04 PTFA240451E Package Outline Specifications Package H-30265-2 7.11 [.280] (45° X 2.03 [.080]) CL D S 2X 2.59±0.38 [.107 ±.015] CL FLANGE 9.78 [.385] 15.60±0.51 [.614±.020] LID 10.16±0.25 [.400±.010] G 2X R1.60 [.063] 2x 7.11 [.280] 4x 1.52 [.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.48±0.38 [.137±.015] 0.0381 [.0015] -A- 20.31 [.800] 1.02 [.040] H-30265-2-1-2303 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 04, 2008-03-04 PTFA240451E Confidential, Limited Internal Distribution Revision History: 2008-03-04 Previous Version: 2006-07-17, Data Sheet Page Subjects (major changes since last revision) All 1 – 2, 9 – 10 Data Sheet Remove references to alternate products. Update package numbers, no change to outline. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2008-03-04 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 04, 2008-03-04