ISC 2SA1187

Inchange Semiconductor
Product Specification
2SA1187
Silicon PNP Power Transistors
DESCRIPTION
·With MT-200 package
·High current capability
APPLICATIONS
·Audio and general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-12
A
IB
Base current
-2
A
PC
Collector power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1187
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-3A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=-80V;f=1MHz
110
pF
fT
Transition frequency
IE=1A ; VCE=-12V
60
MHz
‹
CONDITIONS
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
MIN
TYP.
MAX
-150
UNIT
V
50
Inchange Semiconductor
Product Specification
2SA1187
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3