January 2007 FDY3000NZ tm DualN-Channel2.5V Specified PowerTrench MOSFET GeneralDescription Features Thi s Dual N-Channel MOSFET has been desi gned usi ng Fai rchi l d Semi conductor’ s advanced Power Trench process to opti mi ze the RDS(ON)@ VGS = 2.5v. x 600 mA,20 V RDS(ON)= 700 m:@ VGS = 4.5 V Applications x ESD protecti on di ode (note 3) x Li -Ion Battery Pack x RoHS Compl i ant RDS(ON)= 850 m: @ VGS = 2.5 V 6 5 4 1 2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 3 Absolute Maxim um Ratings Sym bol o TA=25 C unl essotherwi se noted Param eter Ratings Units VDSS Drai n-Source Vol tage 20 V VGSS Gate-Source Vol tage V ID Drai n Current – Conti nuous – Pul sed Power Di ssi pati on (Steady State) r 12 600 1000 625 446 –55 to +150 PD (Note 1a) (Note 1a) (Note 1b) TJ,TSTG Operati ng and Storage Juncti on Temperature Range mA mW qC Therm alCharacteristics RTJA ThermalResi stance,Juncti on-to-Ambi ent (Note 1a) 200 RTJA ThermalResi stance,Juncti on-to-Ambi ent (Note 1b) 280 qC/W Package Marking and Ordering Inform ation Device Marking C 2007 Fai rchi l d Semi conductor Corporati on FDY3000NZ Rev B Device FDY3000NZ ReelSize 7’ ’ Tape width 8 mm Quantity 3000 uni ts www.fai rchi l dsemi .com FDY3000NZ DualN-Channel2.5V Specified PowerTrench MOSFET January 2007 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, On Characteristics VGS = 0 V, ID = 250 PA 20 V 14 ID = 250 PA, Referenced to 25qC VDS = 16 V, VGS = 0 V VGS = r 12 V, VDS = 0 V VGS = r 4.5 V, VDS = 0 V mV/qC 1 r 10 r1 PA PA PA 1.0 –3 1.3 V mV/qC 0.25 0.37 0.73 0.35 1.8 0.70 0.85 1.25 1.00 : (Note 2) VGS(th) 'VGS(th) 'TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance VDS = VGS, ID = 250 PA ID = 250 PA, Referenced to 25qC VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA VGS = 1.8 V, ID = 150 mA VGS = 4.5 V, ID=600mA, TJ = 125qC VDS = 5 V, ID = 600 mA 0.6 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, f = 1.0 MHz V GS = 0 V, 60 pF 20 pF 10 pF (Note 2) VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 : ID = 600 mA, 6 12 ns 8 16 ns 8 16 ns 2.4 4.8 ns 0.8 1.1 nC 0.16 nC 0.26 nC Drain–Source Diode Characteristics and Maximum Ratings VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 150 mA IF = 600 mA, dIF/dt = 100 A/µs (Note 2) 0.7 1.2 V 8 nS 1 nC Notes: unction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of 1. RTJA is the sum of the j the drain pins. RTJC is guaranteed by design while RTCA is determined by the user' s board design a) 200°C/W when 2 mounted on a 1in pad of 2 oz copper b) 280°C/W when mounted on a minimum pad of 2 oz copper Scale 1 :1 on letter size paper 2. Pulse Test:Pulse Width < 300Ps, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDY3000NZ Rev B www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Electrical Characteristics 1 2.6 3.0V 2.5V RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V ID,DRAIN CURRENT (A) 3.5V 0.8 2.0V 0.6 0.4 0.2 2.4 VGS = 2.0V 2.2 2 1.8 1.6 2.5V 1.4 3.0V 1.2 3.5V 4.5V 1 0.8 0 0 0.25 0.5 0.75 0 1 0.2 0.4 Figure 1. On-Region Characteristics. 1 1 ID = 600mA VGS = 4.5V ID = 300mA RDS(ON),ON-RESISTANCE (OHM) RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.9 0.8 0.7 0.6 TA = 125oC 0.5 0.4 TA = 25oC 0.3 0.2 150 1 2 o TJ,JUNCTION TEMPERATURE ( C) 3 4 5 VGS,GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 IS,REVERSE DRAIN CURRENT (A) 1 VDS = 5V ID,DRAIN CURRENT (A) 0.6 ID,DRAIN CURRENT (A) VDS,DRAIN-SOURCE VOLTAGE (V) 0.8 0.6 0.4 TA = 125oC 0.2 25oC -55oC VGS = 0V 0.1 TA = 125oC 0.01 25oC -55oC 0.001 0.0001 0 0.5 1 1.5 2 VGS,GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. FDY3000NZ Rev B 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD,BODY DIODE FORW ARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 100 ID = 600mA f = 1MHz VGS = 0 V 90 4 80 VDS = 5V 10V 3 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 15V 2 1 Ciss 70 60 50 40 Coss 30 20 10 0 Crss 0 0 0.2 0.4 0.6 0.8 1 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 16 20 30 1ms 1s 10ms 100ms 10s DC VGS = 4.5V SINGLE PULSE RTJA = 280oC/W 0.1 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RTJA = 280°C/W TA = 25°C 25 20 15 10 5 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 12 Figure 8. Capacitance Characteristics. 10 ID, DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RTJA(t) = r(t) *RTJA RTJA =280 °C/W 0.2 0.1 P(pk) 0.1 t1 0.05 t2 TJ - TA = P *RTJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY3000NZ Rev B www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 1.70 1.50 0.50 0.30 0.15 6 0.50 4 1.70 1.55 1.20 BSC 1 1.25 1.80 3 (0.20) 0.30 0.50 0.55 LAND PATTERN RECOMMENDATION 1.00 0.60 0.56 0.18 0.10 SEE DETAIL A 0.35 BSC 0.20 BSC DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY3000NZ Rev B www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Dimensional Outline and Pad Layout TRADEMARKS The following are registered and unregistered tradem ark s F airc hild S em ic onduc tor owns or is authoriz ed to use and is not intended to b e an ex haustiv e list of all suc h tradem ark s. A C Ex ™ A c tiv eA rray ™ B ottom less™ B uild it N ow™ C oolF ET™ CROSSVOLT™ D O M E™ Ec oS P A R K ™ E2 C M O S ™ EnS igna™ F A C T® F A S T® F A S Tr™ FPS™ F R F ET™ F A C T Q uiet S eries™ G lob alO p toisolator™ G TO ™ H iS eC ™ I2 C ™ i-Lo ™ Im p liedD isc onnec t™ IntelliM A X ™ IS O P L A N A R ™ L ittleF ET™ M IC R O C O U P L ER ™ M ic roF ET™ M ic roP ak ™ M IC R O W IR E™ M SX™ M S X P ro™ A c ross the b oard. A round the world.™ The P ower F ranc hise® P rogram m ab le A c tiv e D roop ™ O CX™ O C X P ro™ O P TO L O G IC ® O P TO P L A N A R ™ PACM AN™ PO P™ P ower24 7 ™ P owerEdge™ P owerS av er™ P owerTrenc h® Q F ET® Q S™ Q T O p toelec tronic s™ Q uiet S eries™ R ap idC onfigure™ R ap idC onnec t™ µ S erD es™ S c alarP um p ™ S IL EN T S W ITC H ER S M A R T S TA R T™ SPM ™ S tealth™ S up erF ET™ S up erS O T™-3 S up erS O T™-6 S up erS O T™-8 S y nc F ET™ TC M ™ Tiny B oost™ Tiny B uc k ™ Tiny P W M ™ Tiny P ower™ Tiny L ogic ® TIN Y O P TO ™ TruTranslation™ UHC® ® U niF ET™ VCX™ W ire™ DISC L AIMER F A IR C H IL D S EM IC O N D U C TO R R ES ER V ES TH E R IG H T TO M A K E C H A N G ES W ITH O U T F U R TH ER N O TIC E TO A N Y P R O D U C TS H ER EIN TO IM P R O V E R EL IA B IL ITY , F U N C TIO N O R D ES IG N . F A IR C H IL D D O ES N O T A S S U M E A N Y L IA B IL ITY A R IS IN G O U T O F TH E A P P L IC A TIO N O R U S E O F A N Y P R O D U C T O R C IR C U IT D ES C R IB ED H ER EIN ; N EITH ER D O ES IT C O N V EY A N Y L IC EN S E U N D ER ITS P A TEN T R IG H TS , N O R TH E R IG H TS O F O TH ER S . TH ES E S P EC IF IC A TIO N S D O N O T EX P A N D TH E TER M S O F F A IR C H IL D ’S W O R L D W ID E TER M S A N D C O N D ITIO N S , S P EC IF IC A L L Y TH E W A R R A N TY TH ER EIN , W H IC H C O V ER S TH ES E P R O D U C TS . L IF E SU P P O RT P O L IC Y F A IR C H IL D ’S P R O D U C TS A R E N O T A U TH O R IZ ED F O R U S E A S C R ITIC A L C O M P O N EN TS IN L IF E S U P P O R T D EV IC ES O R S Y S TEM S W ITH O U T TH E EX P R ES S W R ITTEN A P P R O V A L O F F A IR C H IL D S EM IC O N D U C TO R C O R P O R A TIO N . A s used herein: 1 . L ife sup p ort dev ic es or sy stem s are dev ic es or sy stem s whic h, (a) are intended for surgic al im p lant into the b ody , or (b ) sup p ort or sustain life, or (c ) whose failure to p erform when p rop erly used in ac c ordanc e with instruc tions for use p rov ided in the lab eling, c an b e reasonab ly ex p ec ted to result in signific ant injury to the user. 2. A c ritic al c om p onent is any c om p onent of a life sup p ort dev ic e or sy stem whose failure to p erform c an b e reasonab ly ex p ec ted to c ause the failure of the life sup p ort dev ic e or sy stem , or to affec t its safety or effec tiv eness. P RO DU C T STATU S DEF IN ITIO N S De fin itio n o f Te rm s Da ta s h e e t Id e n tific a tio n P ro d u c t Sta tu s De fin itio n A dv anc e Inform ation F orm ativ e or In D esign This datasheet c ontains the design sp ec ific ations for p roduc t dev elop m ent. S p ec ific ations m ay c hange in any m anner without notic e. P relim inary F irst P roduc tion This datasheet c ontains p relim inary data, and sup p lem entary data will b e p ub lished at a later date. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. N o Identific ation N eeded F ull P roduc tion This datasheet c ontains final sp ec ific ations. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. O b solete N ot In P roduc tion This datasheet c ontains sp ec ific ations on a p roduc t that has b een disc ontinued b y F airc hild sem ic onduc tor. The datasheet is p rinted for referenc e inform ation only . R ev . I22