High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE(sat) tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 56 24 18 130 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 48 @ ≤ VCES A PC TC = 25°C 190 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 4.0 ICES VCE = VCES, VGE= 0V = 250μA, VCE = VGE 6.5 10 μA 1.5 mA TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved V 2.28 1.95 ±100 nA 2.70 V V G C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100254B(04/11) IXGH24N60C4D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = IC110, VCE = 10V, Note 1 10 VCE = 25V, VGE = 0V, f = 1MHz 17 S 875 86 28 pF pF pF 64 nC IC = IC110, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = IC110, VGE = 15V VCE = 360V, RG = 10Ω Note 2 Inductive Load, TJ = 125°C IC = IC110, VGE = 15V VCE = 360V, RG = 10Ω Note 2 RthJC RthCS TO-247 (IXGH) Outline 7 nC 28 nC 21 33 0.40 143 68 0.30 ns ns mJ ns ns mJ 0.55 20 32 0.63 130 118 0.50 ns ns mJ ns ns mJ 0.21 0.65 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IRM trr Characteristic Values Min. Typ. Max. IF = 15A, VGE = 0V, Note 1 TJ = 150°C 1.6 TJ = 100°C IF = 15A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 100V IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 100 25 RthJC Notes: 2.7 V V 2.6 A ns ns 1.6 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXGH24N60C4D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 50 200 VGE = 15V 13V 11V 10V 45 40 VGE = 15V 160 35 30 25 7V 20 14V 140 8V IC - Amperes IC - Amperes 180 9V 15 13V 120 12V 100 11V 80 10V 9V 60 6V 10 8V 40 7V 5 20 5V 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 25 30 125 150 8 9 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 50 1.3 VGE = 15V 13V 11V 10V 40 VGE = 15V 1.2 9V 35 VCE(sat) - Normalized 45 IC - Amperes 20 VCE - Volts VCE - Volts 8V 30 25 7V 20 15 I = 48A 1.1 1.0 I C = 24A 0.9 0.8 6V 10 C I 0.7 C = 12A 5 5V 0 0 0.5 1 1.5 2 2.5 3 0.6 3.5 0 4 25 VCE - Volts 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 60 5.0 TJ = 25ºC 4.5 50 4.0 40 IC - Amperes VCE - Volts 50 3.5 I C = 48A 3.0 24A 2.5 TJ = - 40ºC 25ºC 125ºC 30 20 10 12A 2.0 0 5 6 7 8 9 10 11 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 12 13 14 15 3 4 5 6 VGE - Volts 7 IXGH24N60C4D1 Fig. 8. Gate Charge Fig. 7. Transconductance 24 16 TJ = - 40ºC 14 25ºC 12 16 VGE - Volts g f s - Siemens 20 125ºC 12 8 VCE = 300V I C = 24A I G = 1mA 10 8 6 4 4 2 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 0 10 20 30 40 50 60 70 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 55 f = 1 MHz 50 40 Cies 1,000 IC - Amperes Capacitance - PicoFarads 45 Coes 100 35 30 25 20 15 10 5 Cres 10 0 5 10 15 20 25 30 35 40 0 100 TJ = 125ºC RG = 10Ω dv / dt < 10V / ns 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXGH24N60C4D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.2 --- TJ = 125ºC , VGE = 15V VCE = 360V 1.4 2.8 1.2 2.4 I C = 48A 1.6 1.6 1.2 1.2 0.8 0.8 I 0.4 C = 24A 10 20 30 40 50 60 70 80 90 Eon ---- VCE = 360V 1.1 0.9 0.6 0.7 TJ = 125ºC 0.4 0.5 0.2 0 0 100 0.1 12 16 20 24 ---- Eoff - MilliJoules 0.6 0.9 0.4 0.7 I C = 24A 65 75 85 95 105 115 600 150 500 140 I C 400 = 48A I 130 110 100 0.3 125 100 10 20 30 40 180 170 160 120 150 100 140 TJ = 125ºC TJ = 25ºC 130 60 120 40 110 20 100 20 24 28 32 70 80 90 0 100 36 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 40 44 48 170 tfi td(on) - - - - 160 RG = 10Ω , VGE = 15V VCE = 360V 140 150 120 140 100 I C 130 I C = 24A = 48A 80 120 60 110 40 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 100 125 t d(off) - Nanoseconds 160 t d(off) - Nanoseconds t f i - Nanoseconds 180 t f i - Nanoseconds VCE = 360V 16 60 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature RG = 10Ω , VGE = 15V 12 50 RG - Ohms td(off) - - - - 80 300 0.5 180 140 C = 24A 200 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 700 VCE = 360V TJ - Degrees Centigrade tfi 48 120 0.2 0 Eon - MilliJoules 1.1 td(off) - - - - TJ = 125ºC, VGE = 15V 160 1.3 0.8 55 44 t d(off) - Nanoseconds I C = 48A t f i - Nanoseconds VCE = 360V 1 45 40 800 tfi 170 1.5 RG = 10Ω , VGE = 15V 35 36 180 1.7 25 32 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.4 1.2 28 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 0.3 TJ = 25ºC RG - Ohms Eoff 1.3 RG = 10Ω , VGE = 15V 0.8 0.4 0 Eoff Eon - MilliJoules 2 Eon - MilliJoules 2 1.5 1 Eoff - MilliJoules 2.4 Eoff - MilliJoules Eon - Eoff 2.8 3.2 IXGH24N60C4D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 100 80 tri 140 td(on) - - - - 70 t r i - Nanoseconds 100 I C = 48A I C = 24A 80 50 40 60 30 40 20 20 10 0 10 20 30 40 50 60 70 80 90 90 tri 80 RG = 10Ω , VGE = 15V td(on) - - - - 30 28 VCE = 360V 70 26 TJ = 125ºC 60 24 50 22 TJ = 25ºC 40 20 30 18 20 16 10 14 0 0 100 t d(on) - Nanoseconds 60 t d(on) - Nanoseconds VCE = 360V 120 t r i - Nanoseconds TJ = 125ºC, VGE = 15V 32 12 12 16 20 24 28 32 36 40 44 48 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 130 30 tri 110 td(on) - - - 28 RG = 10Ω , VGE = 15V 90 26 I C = 48A 70 24 50 22 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 360V I C = 24A 30 20 10 25 35 45 55 65 75 85 95 105 115 18 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_24N60C4D1(L2)3-15-10 IXGH24N60C4D1 Fig. 21. Forward Current IF vs. VF Fig. 24. Dynamic Parameters Qr, IRM vs. TVJ Fig. 22. Reverse Recovery Change Qr vs. -diF/dt Fig. 25. Recovery Time tr vs. -diF/dt Fig. 27. Transient Thermal Resistance Junction to Case © 2011 IXYS CORPORATION, All Rights Reserved Fig. 23. Peak Reverse Current IRM vs. -diF/dt Fig. 26. Peak Forward Voltage VFR , tr vs. -diF/dt