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7.4A, 250V, RDS(on)=0.42 : @VGS=10V
Low gate charge (typical 15.5nC)
Low Crss (typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS Compliant
Qualified to AEC Q101
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FQD9N25TM_F085 Rev.C
www.fairchildsemi.com
FQD9N25TM_F085 N-Ch MOSFET
February 2011
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1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C,L=4.8mH, IAS =7.4A,RG =25: , VDD =50V during the inductor charging time and 0V during the time in avalanche
3. ISD ȟ 9.4A, di/dt ȟ 300A/μs, VDD ȟ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ȟ 300μs, Duty cycle ȟ 2%
5. Essentially independent of operating temperature
©2011 Fairchild Semiconductor Corporation
FQD9N25TM_F085 Rev.C
FQD9N25TM_F085 N-Ch MOSFET
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Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FQD9N25TM_F085 Rev.C
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Rev. I54