SEMICONDUCTOR BCW29/30 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L DIM A B C D E G H J K L M N P D Complementary to BCW31/32 H MAXIMUM RATING (Ta=25 3 G A 2 1 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V IC -100 mA PC * 350 mW Tj 150 Tstg -65 150 Collector Current Collector Power Dissipation P J N M K C P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 1. EMITTER 2. BASE 3. COLLECTOR Junction Temperature Storage Temperature Range * : Package Mounted On 99.9% Alumina 10 8 SOT-23 0.6mm. Marking Lot No. Type Name C1 Lot No. C2 Type Name BCW29 BCW30 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A -30 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA -20 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -5 - - V Collector Cut-off Current ICBO VCB=-30V - - -100 nA Emitter Cut-off Current IEBO VEB=-5V - - -100 nA hFE VCE=-5V, IC=-2mA 110 - 220 200 - 450 - - -0.25 V -0.55 - -0.7 V - - 4 pF - - 10 dB BCW29 DC Current Gain BCW30 Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-0.5mA Base-Emitter On Voltage VBE(ON) VCE=-5V, IC=-2mA Collector Output Capacitance Noise Figure 1999. 12. 29 Cob NF Revision No : 1 VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-0.2mA RS=2k , f=1kHz 1/1