Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5172 TRANSISTOR (NPN) TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current A ICM : 0.5 Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 10µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 5 V Collector cut-off current ICBO VCB= 25V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 5 V, IC=0 0.1 µA DC current gain hFE VCE= 10V, IC= 10mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1.2 V 100 500