FDS4672A tm 40V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 11 A, 40 V. Applications • Low gate charge (35 nC typical) • DC/DC converter • High power and current handling capability RDS(ON) = 13 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • RoHS Compliant D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 40 V VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) 11 A EAS Single Pulse Avalanche Energy (Note 3) 181 mJ PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.4 (Note 1c) 1.2 – Continuous – Pulsed TJ, TSTG 50 -55 to +175 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4672A FDS4672A 13’’ 12mm 2500 units ©2007 Fairchild Semiconductor Corporation FDS4672A Rev C1 (W) FDS4672A February 2007 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = 250 μA 40 V BVDSS ΔBVDSS ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA 2.0 V On Characteristics ID = 250 μA, Referenced to 25°C 37 mV/°C 1 μA (Note 2) VDS = VGS, ID = 250 μA ID = 250 μA, Referenced to 25°C VGS(th) ΔVGS(th) ΔTJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 4.5 V, ID = 11 A VGS=4.5 V, ID =11A, TJ=125°C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 11 A 0.8 1.2 –4 10 15 mV/°C 13 21 50 mΩ A 65 S 4766 pF 346 pF 155 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time VDS = 20 V, V GS = 0 V, f = 1.0 MHz (Note 2) VDD = 20 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 17 31 ns 9 18 ns td(off) Turn–Off Delay Time 43 68 ns tf Turn–Off Fall Time 14 25 ns Qg Total Gate Charge 35 49 Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 20 V, ID = 11 A, VGS = 4.5 V nC 7.8 nC 8.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage VSD (Note 2) 0.7 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% o 3.Starting TJ = 25 C, L = 3mH,ID = 11A, VDD = 40V, VGS = 10V FDS4672A Rev C1 (W) FDS4672A Electrical Characteristics FDS4672A Typical Characteristics 50 1.6 VGS = 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V ID, DRAIN CURRENT (A) 3.5V 40 3.0V 30 20 2.0V 10 0 0 0.5 1 1.5 1.4 VGS = 2.5V 1.2 3.0V 3.5V 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.03 ID = 11A VGS = 4.5V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.8 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 1.4 1.2 1 0.8 0.6 0.4 ID = 5.5A 0.026 0.022 TA = 125oC 0.018 0.014 TA = 25oC 0.01 0.006 -50 -25 0 25 50 75 100 125 150 175 1.5 2 2.5 o 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 70 o VGS = 0V o TA = -55 C 25 C 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 4.0V 1 o 125 C 50 40 30 20 10 0 10 o TA = 125 C 1 25oC 0.1 -55oC 0.01 0.001 0.0001 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4672A Rev C1 (W) FDS4672A Typical Characteristics 7000 ID = 11A VDS = 10V f = 1 MHz VGS = 0 V 20V 4 5600 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 30V 3 2 1 CISS 4200 2800 1400 COSS CRSS 0 0 0 10 20 30 40 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. IAS, AVALANCHE CURRENT (A) 10s DC VGS = 4.5V SINGLE PULSE o RθJA = 125 C/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 100 10 25℃ 125℃ 1 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (mS) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. P(pk),PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 1ms 10ms 100ms 1s 1 40 100 100μs RDS(ON) LIMIT 30 Figure 8. Capacitance Characteristics. 100 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Unclamped Inductive Switching Capability. 50 40 30 SINGLE PULSE RθJA = 125°C/W 20 TA = 25°C 10 0 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 11 Single Pulse Maximum Power Dissipation. FDS4672A Rev C1 (W) FDS4672A r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Typical Characteristics 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 12. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. . FDS4672A Rev C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22