MCC
BDX33
THRU
BDX33D
omponents
20736 Marilla Street Chatsworth
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TM
Micro Commercial Components
0,9:708
•
•
•
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Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Designed For Complementary Use with BDX34, BDX34A, BDX34B,
BDX34C and BDX34D
70W at 25 Cass Temperature
10A Continuous Collector Current
Minimum hFE of 750 at 3.0V, 3.0A
NPN Silicon
Power Darlingtons
:
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
TO-220
°
$EVROXWH 0D[LPXP 5DWLQJV # & 8QOHVV 2WKHUZLVH 1RWHG
Symbol
VCBO
VCEO
VEBO
IC
IB
PTOT
PTOT
TJ
TSTG
TA
Rating
Collector-Base Voltage (IE=0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
Collector-Emitter Voltage (IB=0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Continuous Device Dissipation at (or below) 25
Case Temperature (see Note2)
Continuous Device Dissipation at (or below) 25
Free Air Temperature (see Note 3)
Operating Free Air Temperature Range
Storage Temperature Range
Operating Free-Air Temperature Range
Value
Unit
45
60
80
100
100
:
:
T
U
V
A
A
W
2.0
W
-55~+150
-55~+150
-55~+150
:
:
:
:
°
V(BR)CEO
Revision: A
Typ
3
H
(OHFWULFDO &KDUDFWHULVWLFV # & 8QOHVV 2WKHUZLVH 6SHFLILHG
Min
1 2
V
:
Parameter
Collector-Emitter Breakdown
Voltage
(IC=100mA, IB=0,see note 3)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
Q
A
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2. Derate Linearly to 150 Case Temperature at the Rate of 0.56 W/
3. Derate Linearly to 150 Free Air Temperature at the Rate of 16m W/
Symbol
S
V
45
60
80
100
100
5.0
10
0.3
70
:
:
C
B
F
Max
45
60
80
100
100
Unit
V
K
V
L
G
R
PIN 1.
PIN 2.
PIN 3.
N
BASE
COLLECTOR
EMITTER
DIM
A
B
C
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
D
F
G
H
J
K
L
N
.020
.139
.190
--.012
.500
.045
.190
.045
.161
.110
.250
.025
.580
.060
.210
0.51
3.53
2.29
--0.30
12.70
1.14
4.83
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
Q
R
S
T
U
V
.100
.080
.045
.230
----.045
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
----1.15
3.43
2.92
1.39
6.86
1.27
-----
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D
NOTE
∅
2011/01/01
MCC
BDX33 thru BDX33D
TM
Micro Commercial Components
Symbol
Parameter
Min
Typ
Max
Collector-Emitter Cut-Off Current
0.5
(VCE=30V, IB=0)
BDX33
0.5
(VCE=30V, IB=0)
BDX33A
0.5
ICEO
(VCE=40V, IB=0)
BDX33B
0.5
(VCE=50V, IB=0)
BDX33C
0.5
(VCE=60V, IB=0)
BDX33D
ÄÃ
(VCE=30V, IB=0, TC=100 )
BDX33
ÄÃ
BDX33A
(VCE=30V, IB=0, TC=100 )
ÄÃ
BDX33B
(VCE=40V, IB=0, TC=100 )
ÄÃ
BDX33C
(VCE=50V, IB=0, TC=100 )
ÄÃ
BDX33D
(VCE=60V, IB=0, TC=100 )
Collector Cut-Off Current
1.0
(VCB=45V, IE=0)
BDX33
1.0
(VCB=60V, IE=0)
BDX33A
1.0
ICBO
(VCB=80V, IE=0)
BDX33B
1.0
(VCB=100V, IE=0)
BDX33C
1.0
(VCB=100V, IE=0)
BDX33D
ÈÁÃ
(VCB=45V, IE=0, TC=100 )
BDX33
ÈÁÃ
BDX33A
(VCB=60V, IE=0, TC=100 )
ÈÁÃ
(VCB=80V, IE=0, TC=100 )
BDX33B
ÈÁÃ
(VCB=100V, IE=0, TC=100 )
BDX33C
ÈÁÃ
BDX33D
(VCB=120V, IE=0, TC=100 )
IEBO
Emitter Cut-Off Current
(VEB=5.0V, IC=0)
10
hFE
Forward Current Transfer Ratio
750
(VCE=3.0V, IC=4.0A)
BDX33
750
(VCE=3.0V, IC=4.0A)
BDX33A
750
(VCE=3.0V, IC=3.0A)
(see notes 4 and 5) BDX33B
750
(VCE=3.0V, IC=3.0A)
BDX33C
750
(VCE=3.0V, IC=3.0A)
BDX33D
VBE(ON)
Base-Emitter Voltage
2.5
(VCE=3.0V, IC=4.0A)
BDX33
2.5
(VCE=3.0V, IC=4.0A)
BDX33A
2.5
(VCE=3.0V, IC=3.0A)
(see notes 4 and 5) BDX33B
2.5
(VCE=3.0V, IC=3.0A)
BDX33C
2.5
(VCE=3.0V, IC=3.0A)
BDX33D
VCE(SAT)
Collector-Emitter Saturation Voltage
2.5
(IB=8.0mA, IC=4.0A)
BDX33
2.5
(IB=8.0mA, IC=4.0A)
BDX33A
2.5
(IB=6.0mA, IC=3.0A)
(see notes 4 and 5) BDX33B
2.5
(IB=6.0mA, IC=3.0A)
BDX33C
2.5
(IB=6.0mA, IC=3.0A)
BDX33D
VEC
Parallel Diode Forward Voltage
(IE=8.0A, IB=0)
4.0
NOTES: 4. These parameters must be measured using pulse techniques, tp=300V GXW\ F\FOH 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Unit
:
:
:
:
:
mA
:
:
:
:
:
mA
mA
V
V
V
7KHUPDO &KDUDFWHULVWLFV
Symbol
R-&
R-$
Parameter
Junction to Case Thermal Resistance
Junction to Free Air Thermal Resistance
5HVLVWLYH/RDG6ZLWFKLQJ &KDUDFWHULVWLFV DW Symbol
ton
toff
Parameter
Turn-On Time
Turn-Off Time
Min
:
Typ
Max
1.78
62.5
:/W
:/W
Unit
Typ
1.0
5.0
Max
Unit
s
s
&DVH 7HPSHUDWXUH
Test Conditions
IC=3.0A, IB(on)=12mA, IB(off)=-12mA
VBE(off)=-3.5V, RL WP V GF
Min
2%
ô
ô
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
Revision: A
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2011/01/01
MCC
BDX33 thru BDX33D
TM
Micro Commercial Components
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS130AF
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = 3 V
t p = 300 µs, duty cycle < 2%
100
0·5
1·0
TCS130AH
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1·0
TC = -40°C
TC = 25°C
TC = 100°C
0·5
0·5
10
1·0
IC - Collector Current - A
Figure 1.
Figure 2.
THERMAL INFORMATION
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
TIS130AB
80
Ptot - Maximum Power Dissipation - W
VBE(sat) - Base-Emitter Saturation Voltage - V
2·5
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TCS130AJ
3·0
10
IC - Collector Current - A
70
60
50
40
30
20
10
1·0
10
IC - Collector Current - A
0
0
Figure 3.
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
Revision: A
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2011/01/01
MCC
TM
Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-BP
Bulk;1Kpcs/Box
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