MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2302 Features • • • • • • • • N-Channel Enhancement Mode 20V,3.0A, RDS(ON)=55m¡@VGS=4.5V RDS(ON)=82m¡@VGS=2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead free product is acquired SOT-23 Package Marking Code: S2 Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Field Effect Transistor SOT-23 A Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating 20 3 10 f8 1.25 100 -55 to +150 -55 to +150 D 3 Unit V A A V W к/W к к 1.GATE C 1 F 2. SOURCE B 3. DRAIN 2 E H G J K DIMENSIONS DIM A B C D E F G H J K Internal Block Diagram D INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 G .035 .900 S .079 2.000 inches mm .037 .950 .037 .950 www.mccsemi.com Revision: A 1 of 5 2011/01/01 MCC TM SI2302 Micro Commercial Components Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units 1 µA Off Characteristics V Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V Gate Body Leakage Current, Forward IGSSF VGS = 8V, VDS = 0V 100 nA Gate Body Leakage Current, Reverse IGSSR VGS = -8V, VDS = 0V -100 nA On Characteristics 20 c Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance VGS(th) RDS(on) gFS VGS = VDS, ID = 50µA 0.65 1.2 V 55 72 mΩ VGS = 2.5V, ID = 3.1A 82 110 mΩ VDS = 5V, ID = 3.6A 8.5 S 237 pF 120 pF 45 pF VGS = 4.5V, ID = 3.6A Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 10V, ID = 3.6A, VGS = 4.5V, RGEN = 6Ω 23 45 ns 11 30 ns ns 34 70 Turn-On Fall Time tf 36 70 ns Total Gate Charge Qg 6 10 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 10V, ID = 3.6A, VGS = 4.5V 1.4 nC 1.8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 0.94A 0.94 A 1.2 V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. www.mccsemi.com Revision: A 2 of 5 2011/01/01 MCC TM SI2302 Micro Commercial Components 10 10 25 C 8 6 VGS=2.0V 4 2 8 ID, Drain Current (A) ID, Drain Current (A) VGS=4.5,3.5,2.5V 6 4 2 VGS=1.5V TJ=125 C 0 0 0 1 2 3 5 4 0 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 500 400 300 Ciss 200 Coss 100 Crss 0 5 10 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 ID=3.6A VGS=4.5V VDS, Drain-to-Source Voltage (V) IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 0 1.2 3 2 1 VDS, Drain-to-Source Voltage (V) 600 1.3 -55 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.2 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current www.mccsemi.com Revision: A 3 of 5 2011/01/01 MCC TM SI2302 5 V =10V DS ID=3.6A 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) Micro Commercial Components 3 2 1 0 10 10 10 10 0 2 4 6 RDS(ON)Limit 1 1ms 10ms 100ms 1s DC 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area 2 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2 0.02 10 Single Pulse -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve www.mccsemi.com Revision: A 4 of 5 2011/01/01 MCC TM Micro Commercial Components Ordering Information : Device Packing Part Number-TP Tape&Reel: 3Kpcs/Reel ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . 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Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. www.mccsemi.com Revision: A 5 of 5 2011/01/01