MITSUBISHI IGBT MODULES
CM150DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
- 4th generation Fast switching IGBT module -
CM150DUS-12F
Collector current IC .............…............…
150A
Collector-emitter voltage VCES ...........…
600V
Maximum junction temperature T jmax ...
1 5 0 °C
●Flat base Type
●Copper base plate
●RoHS Directive compliant
●UL Recognized under UL1557, File E323585
Dual (Half-Bridge)
APPLICATION
High frequency (30 kHz ~ 60 kHz) switching use: Induction heating, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
E2 G2
INTERNAL CONNECTION
Tolerance otherwise specified
0.5
to
3
Tolerance
RTC
±0.2
over
3
to
6
±0.3
over
6
to
30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
C2E1
Di1
Tr2
E2
C1
Tr1
Di2
RTC
G1 E1
Division of Dimension
1
February-2011
MITSUBISHI IGBT MODULES
CM150DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Rating
Unit
VCES
Symbol
Collector-emitter voltage
G-E short-circuited
600
V
VGES
Gate-emitter voltage
C-E short-circuited
±20
V
IC
Item
Conditions
Collector current
ICRM
Ptot
Pulse, Repetitive
TC=25 °C
Total power dissipation
Ptot'
IE
(Note.1)
IERM
(Note.1)
(Note.2)
DC, TC=25 °C
TC'=25 °C
150
(Note.4)
A
300
(Note.2, 5)
520
(Note.3, 5)
W
655
(Note.2, 5)
Emitter current
(Free wheeling diode forward current)
TC=25 °C
Tj
Junction temperature
-
-40 ~ +150
Tstg
Storage temperature
-
-40 ~ +125
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Pulse, Repetitive
150
(Note.4)
A
300
2500
°C
V
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1
mA
IGES
Gate-emitter leakage current
±VGE=VGES, C-E short-circuited
-
-
20
μA
VGE(th)
Gate-emitter threshold voltage
IC=15 mA, VCE=10 V
5
6
7
V
T j =25 °C
1.7
2.0
2.7
T j =125 °C
-
1.95
-
-
-
41
-
-
2.7
-
-
1.5
-
930
-
-
-
120
VCEsat
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
IC=150 A
VCE=10 V, G-E short-circuited
VCC=300 V, IC=150 A, VGE=15 V
VCC=300 V, IC=150 A, VGE=±15 V,
RG=4.2 Ω, Inductive load
150
ns
-
2.6
V
VCC=300 V, IE=150 A, VGE=±15 V,
-
-
150
ns
Reverse recovery charge
RG=4.2 Ω, Inductive load
-
2.8
-
μC
Turn-on switching energy per pulse
VCC=300 V, IC=IE=150 A,
-
2.5
-
trr
(Note.1)
Reverse recovery time
Qrr
(Note.1)
rg
100
350
nC
2.0
IE=150 A
(Note.1)
-
nF
-
Emitter-collector voltage
Err
-
V
-
Fall time
(Note.1)
Eoff
,
VGE=15 V
VEC
Eon
(Note.6)
(Note.6)
, G-E short-circuited
Turn-off switching energy per pulse
VGE=±15 V, RG=4.2 Ω, T j =125 °C,
-
3.35
-
Reverse recovery energy per pulse
Inductive load
-
2.2
-
Internal gate resistance
Per switch
-
0
-
mJ
Ω
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Rth(j-c')Q
Rth(j-c')D
Item
Thermal resistance
(Note.2)
Contact thermal resistance
Thermal resistance
Limits
Conditions
(Note.2)
(Note.3)
Min.
Typ.
Max.
Unit
Junction to case, per IGBT
-
-
0.24
K/W
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
(Note.7)
Thermal grease applied
Junction to case, per IGBT
-
-
0.47
K/W
-
0.07
-
K/W
-
-
0.19
K/W
Junction to case, per FWDi
-
-
0.35
K/W
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
m
ec
Item
Mounting torque
Weight
Flatness of base plate
Limits
Conditions
Min.
Typ.
Max.
Unit
Main terminals
M 5 screw
2.5
3.0
3.5
Mounting to heat sink
M 6 screw
3.5
4.0
4.5
-
310
-
g
-100
-
+100
μm
On the centerline X, Y
2
(Note.8)
N·m
February-2011
MITSUBISHI IGBT MODULES
CM150DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS (T a =25 °C)
Symbol
Item
Conditions
Limits
Min.
Typ.
Max.
VCC
(DC) Supply voltage
Applied across C1-E2
-
300
400
VGEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2
13.5
15.0
16.5
RG
External gate resistance
Per switch
4.2
-
42
Unit
V
Ω
-: Concave
+: Convex
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (TC) measured point is base plate side. (Refer to the figure of chip location)
Note.3: Case temperature (TC') and heat sink temperature (T s ') are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R t h ( s - a ) } should measure just under the chips.
Note.4: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
Note.5: Junction temperature (T j ) should not increase beyond T j m a x rating.
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: Base plate flatness measurement points are as in the following figure.
3 mm
X
3 mm
Y
Bottom
3 mm
Bottom
-: Concave
Bottom
+: Convex
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Case Temperature (T C )
measured point
(Base plate side)
Tr1/Tr2: IGBT, Di1/Di2: FWDi
3
February-2011
MITSUBISHI IGBT MODULES
CM150DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
C1
C1
VGE=15 V
G1
V
V
Es1
V
C2E1
C2E1
G1
IE
G1
Es1
VGE=15 V
Shortcircuited
Shortcircuited
Shortcircuited
G1
IC
C1
C1
Shortcircuited
G2
C2E1
Shortcircuited
C2E1
Shortcircuited
IC
V
Es1
Es1
IE
G2
G2
G2
E2
Es2
Es2
Tr1
Tr2
E2
Di1
Di2
V C E s a t test circuit
VEC test circuit
∼
vGE
iE
90 %
0V
iE
0
Q r r =0.5×I r r ×t r r
t
Load
trr
IE
+
VCC
iC
0A
∼
-V GE
E2
Es2
Es2
E2
t
90 %
+V GE
RG
vGE
0V
Irr
vCE
iC
-V GE
10%
0A
tf
tr
t d (o n )
t d( o ff)
t
t r r , Q r r test waveform
Switching characteristics test circuit and waveforms
iE
vCE
0
iC
ICM
iC
VCC
0.1×ICM
0.1×VCC
0.5×I r r
ICM
VCC
t
0
0.1×VCC
IEM
vEC
vCE
0.1×ICM
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
VCC
0A
t
0V
t
ti
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
4
February-2011
MITSUBISHI IGBT MODULES
CM150DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
VGE=15 V
13 V 11 V 10 V 9.5 V
300
3
9 V
VGE=20 V
8.5 V
15 V
2.5
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
COLLECTOR CURRENT
IC (A)
250
200
8 V
150
7.5 V
100
50
7 V
0
T j =25 °C
2
1.5
T j =125 °C
1
0.5
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
5
0
50
VCE (V)
100
150
200
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
250
300
2.5
3
IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T j =25 °C
G-E short-circuited , T j =25 °C
5
1000
4
3.5
3
IC=150 A
IE (A)
IC=300 A
IC=60 A
EMITTER CURRENT
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
4.5
2.5
2
1.5
100
10
1
0.5
0
1
6
8
10
12
14
GATE-EMITTER VOLTAGE
16
18
20
0
VGE (V)
0.5
1
1.5
2
EMITTER-COLLECTOR VOLTAGE
5
VEC (V)
February-2011
MITSUBISHI IGBT MODULES
CM150DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=4.2 Ω,
T j =125 °C, INDUCTIVE LOAD
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=4.2 Ω,
T j =125 °C, INDUCTIVE LOAD
1000
100
td(off)
Irr
100
trr
td(on)
t r r (ns), I r r (A)
SWITCHING TIME (ns)
tf
tr
10
1
10
10
100
10
1000
COLLECTOR CURRENT
IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=4.2 Ω, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
1000
IE (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, IC/IE=150 A, VGE=±15 V, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
10
100
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
100
EMITTER CURRENT
Eoff
Eon
Err
1
0.1
Eon
10
Eoff
1
Err
0.1
10
100
1000
1
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
10
EXTERNAL GATE RESISTANCE
6
100
RG (Ω)
February-2011
MITSUBISHI IGBT MODULES
CM150DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j =25 °C
IC=150 A, T j =25 °C
100
20
18
VGE (V)
GATE-EMITTER VOLTAGE
10
Coes
1
VCC=200 V
16
14
VCC=300 V
12
10
8
6
4
Cres
2
0
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
0
100
VCE (V)
200
400
600
800
GATE CHARGE
1000
1200
1400
QG (nC)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
Single pulse, TC'=25°C
1
Zth(j-c')
0.1
NORMALIZED TRANSIENT THERMAL IMPEDANCE
CAPACITANCE (nF)
Cies
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
R t h ( j - c ' ) Q =0.19 K/W, R t h ( j - c ' ) D =0.35 K/W
TIME (S)
7
February-2011
MITSUBISHI IGBT MODULES
CM150DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
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damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of
substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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8
February-2011