MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
CM600HA-24A
●I C ….………………….…….. 600 A
●V CES ……………..…...….. 1200 V
●Flat base Type
Copper (non-plating) base plate
No accessory (terminal screw) attach
●RoHS Directive compliant
Single
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Di1
Tolerance otherwise specified
Division of Dimension
Tolerance
0.5
to
3
±0.2
over
3
to
6
±0.3
over
6
to
30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
C
E
Tr1
E
G
1
January-2011
MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Rating
Unit
VCES
Symbol
Collector-emitter voltage
G-E short-circuited
1200
V
VGES
Gate-emitter voltage
C-E short-circuited
±20
V
IC
Item
Conditions
DC, TC=80 °C
Collector current
ICRM
(Note.2)
Pulse, Repetitive
600
(Note.3)
A
1200
Total power dissipation
TC=25 °C
(Note.2, 4)
Emitter current
(Free wheeling diode forward current)
TC=25 °C
(Note.2, 4)
Tj
Junction temperature
-
-40 ~ +150
Tstg
Storage temperature
-
-40 ~ +125
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Ptot
IE
(Note.1)
IERM
(Note.1)
Pulse, Repetitive
(Note.3)
3670
600
W
A
1200
°C
2500
V
MECHANICAL CHARACTERISTICS
Symbol
Item
Mt
Mounting torque
Mt
Limits
Conditions
Ms
Min.
Typ.
Max.
Unit
Main terminals
M 6 screw
1.96
2.45
2.94
Auxiliary terminals
M 4 screw
0.98
1.18
1.47
Mounting to heat sink
M 6 screw
1.96
2.45
2.94
-
480
-
g
±0
-
+100
μm
m
Weight
-
ec
Flatness of base plate
On the centerline X, Y
(Note.5)
N·m
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1
mA
IGES
Gate-emitter leakage current
±VGE=VGES, C-E short-circuited
-
-
1.5
μA
VGE(th)
Gate-emitter threshold voltage
IC=60 mA, VCE=10 V
6
7
8
V
T j =25 °C
-
2.1
3.0
T j =125 °C
-
2.4
-
-
-
105
-
-
9.0
-
-
2.0
-
3000
-
-
-
660
VCEsat
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
IC=600 A
VCE=10 V, G-E short-circuited
VCC=600 V, IC=600 A, VGE=15 V
VCC=600 V, IC=600 A, VGE=±15 V,
RG=0.52 Ω, Inductive load
Fall time
190
700
350
nC
ns
3.0
3.8
V
VCC=600 V, IE=600 A, VGE=±15 V,
-
-
250
ns
μC
IE=600 A
trr
(Note.1)
Reverse recovery time
Qrr
(Note.1)
Err
-
nF
-
Emitter-collector voltage
(Note.1)
-
V
-
(Note.1)
Eoff
,
VGE=15 V
VEC
Eon
(Note.6)
(Note.6)
, G-E short-circuited
Reverse recovery charge
RG=0.52 Ω, Inductive load
-
19
-
Turn-on switching energy per pulse
VCC=600 V, IC=IE=600 A,
-
100
-
Turn-off switching energy per pulse
VGE=±15 V, RG=0.52 Ω,
-
66
-
mJ
Reverse recovery energy per pulse
T j =125 °C, Inductive load
-
29.5
rg
Internal gate resistance
TC=25 °C
-
1.0
-
Ω
RG
External gate resistance
-
0.52
-
7.8
Ω
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance
Conditions
(Note.2)
Contact thermal resistance
(Note.2)
Limits
Min.
Typ.
Max.
Unit
Junction to case, IGBT part
-
-
34
K/kW
Junction to case, FWDi part
Case to heat sink,
(Note.7)
Thermal grease applied
-
-
53
K/kW
-
20
-
K/kW
2
January-2011
MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
-: Concave
+: Convex
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R t h ( s - a ) } should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
Note.4: Junction temperature (T j ) should not increase beyond T j m a x rating.
Note.5: Base plate flatness measurement point is as in the following figure.
Bottom
X
Y
Bottom
-: Concave
Bottom
+: Convex
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1: IGBT, Di1: FWDi. Each mark points the center position of each chip.
3
January-2011
MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
C
C
VGE=15 V
IC
G
V
shortcircuited
IE
G
V
Es
Es
E
E
VEC test circuit
V C E s a t test circuit
iE
∼
vGE
90 %
0V
t rr
IE
+
VCC
0A
90 %
RG
Irr
vCE
vGE
0.5×I r r
iC
-V GE
10 %
0A
tr
td ( o n )
tf
t d( o ff)
t
t r r , Q r r test waveform
Switching characteristics test circuit and waveforms
iE
vCE
t
∼
iC
0V
Q rr =0.5×I rr ×t r r
t
Load
-V GE
+V GE
iE
0
iC
iC
ICM
VCC
ICM
VCC
IEM
vEC
vCE
VCC
t
0A
0
0.1×ICM
0.1×VCC
t
0
0.1×VCC
0.02×ICM
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
0V
t
ti
FWDi Reverse recovery energy
Turn-on, Turn-off switching and Reverse recovery energy test waveforms (integral range)
4
January-2011
MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
VGE=15 V
4
1200
VGE=20 V
15 V
T j =125 °C
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
IC (A)
1000
COLLECTOR CURRENT
13 V
12 V
800
600
11 V
400
10 V
200
3
T j =25 °C
2
1
9 V
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
0
10
0
200
VCE (V)
600
800
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
1000
1200
IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T j =25 °C
G-E short-circuited
10
10000
8
IE (A)
IC=1200 A
IC=600 A
6
IC=240 A
EMITTER CURRENT
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
400
4
1000
T j =125 °C
T j =25 °C
100
2
0
10
6
8
10
12
14
GATE-EMITTER VOLTAGE
16
18
20
0
VGE (V)
1
2
3
EMITTER-COLLECTOR VOLTAGE
5
4
5
VEC (V)
January-2011
MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0.52 Ω, T j =125 °C
INDUCTIVE LOAD
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0.52 Ω, T j =125 °C
INDUCTIVE LOAD
1000
1000
td(off)
tf
t r r (ns), I r r (A)
SWITCHING TIME (ns)
td(on)
100
tr
10
100
trr
10
10
100
COLLECTOR CURRENT
1000
10
IC (A)
100
EMITTER CURRENT
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0.52 Ω, T j =125 °C
INDUCTIVE LOAD, PER PULSE
1000
IE (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC/IE=600 A, VGE=±15 V, T j =125 °C
INDUCTIVE LOAD, PER PULSE
1000
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
100
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
Irr
Err
Eoff
10
Eon
1
Eon
100
Eoff
Err
10
10
100
1000
0.1
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
1
EXTERNAL GATE RESISTANCE
6
10
RG (Ω)
January-2011
MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j =25 °C
IC=600 A, T j =25 °C
20
GATE-EMITTER VOLTAGE
Cies
100
CAPACITANCE (nF)
VGE (V)
1000
10
Coes
1
Cres
0.1
VCC= 4 0 0 V
15
VCC= 6 0 0 V
10
5
0
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
100
0
VCE (V)
500
1000
1500
2000
GATE CHARGE
2500
3000
3500
4000
QG (nC)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
Zth(j-c)
Single pulse, TC=25°C
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
R t h ( j - c ) Q =34 K/kW, R t h ( j - c ) D =53 K/kW
TIME (S)
7
January-2011
MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of
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8
January-2011