MITSUBISHI MGF0953P

< High-power GaAs FET (small signal gain stage) >
MGF0953P
L & S BAND / 0.6W
SMD / Plastic Mold non - matched
DESCRIPTION
The MGF0953P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
 High output power
Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
 High power gain
Gp=16.5dB(TYP.) @f=2.15GHz
 High power added efficiency
add=40%(TYP.) @f=2.15GHz,Pin=10dBm
 Plastic Mold Lead – less Package
APPLICATION
 For L/S Band power amplifiers
QUALITY
Fig.1
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=10V
Delivery
 Ids=0.15A
 Rg=1000
Tape & Reel(1.5K)
Absolute maximum ratings
Symbol
VGSO
VGDO
ID
IGR
IGF
PT
Tch
Tstg
Gate to source breakdown voltage
Gate to drain breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Electrical characteristics
Symbol
VGS(off)
Po *1
add *1
GLP *2
Rth(ch-c)
(Ta=25C)
Parameter
Gate to source cut-off voltage
Power added Efficiency
Unit
-15
-15
0.4
-1.25
5
6.25
150
-40 to +150
V
V
A
mA
mA
W
C
C
(Ta=25C)
Parameter
Output power
Ratings
Test conditions
VDS=3V,ID=0.1mA
VDS=10V,ID=0.15A,f=2.15GHz
*1:Pin=10dBm, *2:Pin=0dB
Linear Power Gain
Thermal Resistance
*3
Vf Method
*3:Channel to case
Publication Date : Apr., 2011
1
Limits
Min.
-2
26
16.5
-
Typ.
28
40
18
14
Unit
Max.
-5
20
V
dBm
%
dB
C/W
< High-power GaAs FET (small signal gain stage) >
MGF0953P
L & S BAND / 0.6W
SMD / Plastic Mold non - matched
MGF09153P TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0953P
L & S BAND / 0.6W
SMD / Plastic Mold non - matched
MGF0953P S PARAMETERS
(Ta=25C,VD=10V,ID=0.15A, Reference Plane see Fig.1)
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF0953P
L & S BAND / 0.6W
SMD / Plastic Mold non - matched
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Publication Date : Apr., 2011
4