< High-power GaAs FET (small signal gain stage) > MGF1601B S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. FEATURES High linear power gain Glp=8.0dB @f=8GHz High P1dB P1dB=21.8dBm(TYP.) @f=8GHz APPLICATION S to X Band medium-power amplifiers and oscillators QUALITY GG RECOMMENDED BIAS CONDITION VDS=6V,Id=100mA Refer to Bias Procedure Keep Safety first in your circuit designs! Absolute maximum ratings Symbol VGDO VGSO ID IGR IGF PT Tch Tstg (Ta=25C) Parameter Gate to drain breakdown voltage Gate to source breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Electrical characteristics Symbol Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Ratings Unit -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 V V mA mA mA W C C (Ta=25C) Parameter Test conditions V(BR)GDO V(BR)GSO Gate to drain breakdown voltage Ig=200A Gate to source breakdown voltage Ig=200A IGSS IDSS VGS(off) gm GLP P1dB Rth(ch-c) Gate to source leakage current VDS=0V,VGS=-3V VDS=3V,VGS=0V VDS=3V,ID=100A VDS=3V,ID=100mA VDS=6V,ID=100mA,f=8GHz VDS=6V,ID=100mA,f=8GHz ΔVf method Saturated drain current Gate to source cut-off voltage Transconductance Linear Power Gain Output power at 1dB gain compression Thermal resistance *1 *1:Channel to ambient Publication Date : Apr., 2011 1 Limits Unit Min. Typ. Max. -8 -8 150 -1.5 70 6 20.8 - 200 90 8 21.8 - 20 250 -4.5 125 V V A mA V mS dB dBm ℃/W < High-power GaAs FET (small signal gain stage) > MGF1601B S to X BAND / 0.15W non - matched MGF1601B TYPICAL CHARACTERISTICS (Ta=25C) Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF1601B S to X BAND / 0.15W non - matched MGF1601B S PARAMETERS(Ta=25C,VD=6V,ID=100mA) Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage) > MGF1601B S to X BAND / 0.15W non - matched Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Apr., 2011 4