< X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system Flip-chip mounted High output power P1dB=8W (TYP.) @f=14.0 – 14.5GHz High linear power gain GLP=5.5dB (TYP.) @f=14.0 – 14.5GHz High power added efficiency P.A.E.=20% (TYP.) @f=14.0 – 14.5GHz APPLICATION 14.0 – 14.5 GHz band power amplifiers QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=2.4A Refer to Bias Procedure Absolute maximum ratings Symbol (Ta=25C) Parameter Ratings Unit V VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -15 V ID Drain current 6 A IGR Reverse gate current -18 mA IGF Forward gate current 36 mA PT *1 Total power dissipation 42.8 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. *1 : Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Unit Min. Typ. Max. 6 A S IDSS Saturated drain current VDS=3V,VGS=0V - 4 gm Transconductance VDS=3V,ID=2.4A 1.2 2 - VGS(off) P1dB Gate to source cut-off voltage VDS=3V,ID=20mA -2 - -5 V Output power at 1dB gain compression VDS=10V,ID(RF off)=2.4A 38.5 39 - dBm f=14.0 – 14.5GHz 4.5 5.5 - dB - 20 - % - - 3.5 C/W GLP Linear Power Gain PAE Power added efficiency Rth(ch-c) *2 Thermal resistance delta Vf method *2 : Channel-case Publication Date : Apr., 2011 1 < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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