MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2527 (Lot No.) FEATURES • • • • • • • • • InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 19dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.5 10 9 8 7 6 1 2 3 4 5 APPLICATIONS IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont DIM IN mm (X-ray Top View) FUNCTIONAL BLOCK DIAGRAM Vc1 Vc2 Vc3 1000pF 1000pF 1000pF Pin Pout Vcont (0/3V) Po_det Bias Circuit Vcb 33kohms 1000pF Vref Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. (1/7) January-2008 MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Vc1, Vc2 Vc3, Vcb Vref Vcont Parameter Conditions* Value Unit Collector Supply Voltage Pout≤27.0dBm 8 V Reference Voltage Pout≤27.0dBm 3 V ATT Control Voltage Pout≤27.0dBm 3.3 V 80 mA 250 mA 900 mA Ic1 Ic2 Operation Current Pout≤27.0dBm Ic3 Pin Input Power Pout≤27.0dBm 5 dBm - Duty Cycle Pout≤27.0dBm 50 % Operation Temperature Pout≤27.0dBm -30~+85 °C - -40~+125 °C Tc(op) Tstg Storage Temperature *NOTE : Zin=Zout=50Ω Each maximum rating is guaranteed independently. Please take care that MGFS36E2527 is operated under these conditions at the worst case on your terminal. ELECTRICAL CHARACTERISTICS (Ta=25°C) Symbol Parameter Test Conditions* Limits Min f Typ 2.5 Unit Max Frequency - 2.7 Gp Gain Vc=6V, Vref=2.85V 33 dB ηt Efficiency Pout=27dBm 12 % EVM EVM 64QAM OFDM Modulation 2.5 % Vdet Power Detector Voltage Duty Cycle < 50% 2.0 V ATT Control Gain Step Vcont=3V 19 dB Ileak Leakage Current Vc=6V, Vref=0V 10 GHz µA *NOTE : Zin=Zout=50Ω ESD RATING - Class 1A (HBM) MOISTURE SENSITIVITY LEVEL - Level 3 THERMAL RESISTANCE : 30°C/W MITSUBISHI ELECTRIC CORP. (2/7) January-2008 MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. PERFORMANCE DATA WiMAX OFDM 64QAM signal input. Ta=25degC. Output Power vs. Input Power Efficiency vs. Output Power 30 20 Vc=6V Vref=2.85V Vcont=0V 18 16 25 14 Efficiency (%) Output Power (dBm) Vc=6V Vref=2.85V Vcont=0V 20 12 10 8 6 15 4 2.5GHz 2.6GHz 2.7GHz 2.5GHz 2.6GHz 2.7GHz 2 10 0 -20 -15 -10 Input Power (dBm) -5 0 10 EVM vs. Output Power 5.0 20 Output Power (dBm) 25 30 Detector Voltage vs. Output Power 6.0 5.5 15 3.0 2.5GHz 2.6GHz 2.7GHz Vc=6V Vref=2.85V Vcont=0V Vc=6V Vref=2.85V Vcont=0V 2.5 4.5 2.0 3.5 Vdet (V) EVM (%) 4.0 3.0 2.5 1.5 1.0 2.0 1.5 2.5GHz 2.6GHz 2.7GHz 0.5 1.0 0.5 0.0 0.0 10 15 20 Output Power (dBm) 25 30 10 15 20 Output Power (dBm) 25 30 Attenuation Performance 40 Vcont=0V Vcont=3V Vc=6V Vref=2.85V S21 (dB) 30 20 10 0 2.0 2.2 2.4 2.6 2.8 3.0 Frequency (GHz) MITSUBISHI ELECTRIC CORP. (3/7) January-2008 MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. WiMAX OFDM 64QAM signal input. Output Power vs. Input Power Efficiency vs. Output Power 20 f =2.6GHz Vc=6V Vref=2.85V Vcont=0V 25 16 14 20 12 10 8 6 -30degC 0degC 25degC 60degC 85degC 15 -30degC 0degC 25degC 60degC 85degC 4 2 10 0 -20 -15 -10 Input Power (dBm) -5 0 10 EVM vs. Output Power 15 20 Output Power (dBm) 25 30 Detector Voltage vs. Output Power 3.0 6.0 f =2.6GHz Vc=6V Vref=2.85V Vcont=0V 5.5 5.0 4.5 2.5 4.0 f =2.6GHz Vc=6V Vref=2.85V Vcont=0V 2.0 3.5 Vdet (V) EVM (%) f =2.6GHz Vc=6V Vref=2.85V Vcont=0V 18 Efficiency (%) Output Power (dBm) 30 3.0 2.5 2.0 1.5 1.0 -30degC 0degC 25degC 60degC 85degC 1.5 1.0 0.5 0.5 0.0 10 15 20 Output Power (dBm) 25 -30degC 0degC 25degC 30 60degC 85degC 0.0 10 15 20 Output Power (dBm) 25 30 Attenuation Level 22 Attenuation Level (dB) 21 f=2.6GHz Vc=6V Vref=2.85V 20 19 18 17 16 -30 0 30 60 Case Temperature (degC) 90 MITSUBISHI ELECTRIC CORP. (4/7) January-2008 MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. WiMAX OFDM 64QAM signal input. Ta=25degC. Output Power vs. Input Power Efficiency vs. Output Power 30 20 16 25 14 20 12 10 8 6 15 Vref=2.75V Vref=2.85V Vref=2.95V Vref=2.75V Vref=2.85V Vref=2.95V 4 2 10 0 -20 -15 -10 Input Power (dBm) -5 0 10 EVM vs. Output Power 15 20 Output Power (dBm) 25 30 Detector Voltage vs. Output Power 3.0 6.0 Vref=2.75V Vref=2.85V Vref=2.95V f =2.6GHz Vc=6V Vcont=0V 5.5 5.0 4.5 2.5 4.0 f =2.6GHz Vc=6V Vcont=0V 2.0 3.5 Vdet (V) EVM (%) f =2.6GHz Vc=6V Vcont=0V 18 Efficiency (%) Output Power (dBm) f =2.6GHz Vc=6V Vcont=0V 3.0 2.5 2.0 1.5 1.0 1.5 1.0 Vref=2.75V Vref=2.85V Vref=2.95V 0.5 0.5 0.0 0.0 10 15 20 Output Power (dBm) 25 30 10 15 20 Output Power (dBm) 25 30 Attenuation Level 22 Attenuation Level (dB) 21 f=2.6GHz Vc=6V 20 19 18 17 16 2.7 2.8 2.9 Reference Voltage (V) 3.0 MITSUBISHI ELECTRIC CORP. (5/7) January-2008 MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. APPLICATION CIRCUIT RF Input Supply Voltage 50ohms Pin Vcont Vcb Vref Vc1 GND Vc2 Po_det Vc3 1uF 1000pF Attenuator Control 1000pF Reference Voltage 10nF Detector Voltage Out Pout 1000pF 50ohms RF Output Pulse Operation is controlled by Vref PACKAGE OUTLINE 4.5 1st pin mark 1.3 (max) 1.0 (typ) 4.5 0.3 4.1 3.6 1.8 0.3 Dimension in millimeters. Unless specified tolerance ±0.2mm. 3.65 2.65 0.5 0.5 MITSUBISHI ELECTRIC CORP. (6/7) January-2008 MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. HANDLING PRECAUTION 1) Work desk, test equipment, soldering iron and worker should be grounded before mounting and testing. Please note that electric discharge of GaAs HBT is much more sensitive than that of Si transistor. Handling without ground possibly damages GaAs HBT. 2) The surface of a board on which this product is mounted should be as flat and clean as possible to prevent a substrate from cracking by bending this product. 3) IR reflow soldering condition is confirmed following profile. 260degC 225degC ≧10sec (PKG Surface temp.) ≧70sec 180+/-10degC 120+/-20sec 4) Handling precaution at high temperature This product has the structure of sealing with epoxy resin on grass epoxy substrate. This epoxy resin gets soft if the temperature exceeds glass transition temperature=120degC, and the thermic decomposition is occurred if the temperature exceeds 350degC. Therefore, in case of heating this product, please keep the same heat profile as recommended reflow one. Please note that crack, flaw or modification may be generated if softened epoxy resin part is handled with tweezers and etc at high temperature. 5) Cleaning condition Please select after confirming administrative guidance, legal restrictions, and the mass of the residual ion contaminant etc., and use it. 6) After soldering, please remove the flux. Please take care that solvent does not penetrate into this product. 7) GaAs HBT contains As(Arsenic). This product should be dumped as particular industrial waste. MITSUBISHI ELECTRIC CORP. (7/7) January-2008