MITSUBISHI RA55H3340M-101

Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA55H3340M
RoHS Compliance, 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA55H3340M is a 55-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The
output power and drain current increase as the gate voltage
increases. With a gate voltage around 4V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the
output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
1
4
5
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA55H3340M-101
Antistatic tray,
10 modules/tray
RA55H3340M
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA55H3340M
RoHS COMPLIANT
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
VDD
CONDITIONS
Drain Voltage
VGG<5V
VGG
Gate Voltage
VDD<12.5V, Pin=0mW
Pin
Input Power
Pout
Output Power
Tcase(OP)
Tstg
f=330-400MHz,
ZG=ZL=50Ω
RATING
UNIT
17
V
6
V
100
mW
65
W
Operation Case Temperature Range
-30 to +110
°C
Storage Temperature Range
-40 to +110
°C
Note.1.The above parameters are independently guaranteed.
Note.2.In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
Pout
CONDITIONS
Frequency Range
Output Power
ηT
Total Efficiency
2fo
2
ρin
Input VSWR
IGG
Gate Current
—
Stability
—
Load VSWR Tolerance
nd
Harmonic
VDD=12.5V
VGG=5V
Pin=50mW
MIN
TYP
MAX
UNIT
330
-
400
MHz
55
-
-
W
35
-
-
%
-
-
-50
dBc
3:1
—
-
mA
-
VDD=10.0-15.2V, Pin=25-70mW,
Pout<65W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW, Pout=55W (VGG control),
Load VSWR=20:1
1
No parasitic oscillation
—
No degradation or
destroy
—
Note. All parameters, conditions, ratings, and limits are subject to change without notice.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA55H3340M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
2nd, 3rd HARMONICS versus FREQUENCY
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
TOTAL
EFFICIENCYηT(%)
HARMONICS (dBc)
70
Pout
60
60
50
50
ηT
40
40
30
30
VDD=12.5V
VGG=5V
Pin=50mW
20
20
ρin
3rd
-60
2nd
-70
-80
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
Gp
20
40
16
30
12
IDD
20
8
f=330MHz,
VDD=12.5V,
VGG=5V
10
4
0
60
OUTPUT POWER
Pout(dBm)
POWER GAIN Gp(dB)
Pout
DRAIN CURRENT IDD(A)
60
OUTPUT POWER
Pout(dBm)
POWER GAIN Gp(dB)
-50
10
0
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
50
0
-10
VDD=12.5V
VGG=5V
Pin=50mW
-40
-5
0
5
10
15
INPUT POWER Pin(dBm)
24
Gp
50
Pout
20
40
16
30
12
20
IDD
8
f=365MHz,
VDD=12.5V,
VGG=5V
10
4
0
20
DRAIN CURRENT IDD(A)
10
0
-30
80
70
INPUT VSWR ρin (-)
OUTPUT POWER P out(W)
80
0
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
Pout
Gp
50
20
40
16
30
12
IDD
20
8
f=400MHz,
VDD=12.5V,
VGG=5V
10
0
-10
-5
0
5
10
4
DRAIN CURRENT IDD(A)
OUTPUT POWER
Pout(dBm)
POWER GAIN Gp(dB)
60
0
15
20
INPUT POWER Pin(dBm)
24
22
20
18
16
14
12
10
8
6
4
2
0
Pout
IDD
2
4
6
8
10
12
14
DRAIN VOLTAGE VDD(V)
16
120
110
100
90
80
70
60
50
40
30
20
10
0
f=365MHz,
VGG=5V,
Pin=50mW
Pout
IDD
2
RA55H3340M
24
22
20
18
16
14
12
10
8
6
4
2
0
4
6
8
10
12
DRAIN VOLTAGE VDD(V)
14
DRAIN CURRENT IDD(A)
f=330MHz,
VGG=5V,
Pin=50mW
OUTPUT POWER P out(W)
120
110
100
90
80
70
60
50
40
30
20
10
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
DRAIN CURRENT IDD(A)
OUTPUT POWER P out(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA55H3340M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
f=400MHz,
VGG=5V,
Pin=50mW
24
22
20
18
16
14
12
10
8
6
4
2
0
Pout
IDD
2
4
6
8
10
12
DRAIN VOLTAGE VDD(V)
14
16
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
70
16
14
Pout
60
12
IDD
50
10
40
8
30
6
20
4
10
2
0
0
2.5
3
90
OUTPUT POWER P out(W)
f=330MHz,
VDD=12.5V,
Pin=50mW
80
3.5
4
4.5
GATE VOLTAGE VGG(V)
5
DRAIN CURRENT IDD(A)
OUTPUT POWER P out(W)
90
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
f=365MHz,
VDD=12.5V,
Pin=50mW
80
70
16
14
Pout
60
12
50
10
IDD
40
8
30
6
20
4
10
2
0
5.5
0
2.5
3
3.5
4
4.5
GATE VOLTAGE VGG(V)
5
DRAIN CURRENT IDD(A)
120
110
100
90
80
70
60
50
40
30
20
10
0
DRAIN CURRENT IDD(A)
OUTPUT POWER P out(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
70
18
f=400MHz,
VDD=12.5V,
Pin=50mW
16
14
Pout
60
12
IDD
50
10
40
8
30
6
20
4
10
2
0
0
2.5
3
3.5
4
4.5
GATE VOLTAGE VGG(V)
5
DRAIN CURRENT IDD(A)
OUTPUT POWER P out(W)
90
5.5
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA55H3340M
OUTLINE DRAWING (mm)
66.0 ±0.5
7.25 ±0.8
51.5 ±0.5
3
4
2.0 ±0.5
2
4.0 ±0.3
9.5 ±0.5
5
1
14.0 ±1
2-R2 ±0.5
17.0 ±0.5
60.0 ±0.5
21.0 ±0.5
3.0 ±0.3
Ø0.60 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
(9.88)
2.3 ±0.3
7.5 ±0.5
0.09 ±0.02
3.1 +0.6/-0.4
55.5 ±1
(50.4)
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA55H3340M
TEST BLOCK DIAGRAM
Power
Meter
DUT
1
Signal
Generator
Attenuator
Preamplifier
Attenuator
Directional
Coupler
3
2
+
DC Power
Supply VGG
Spectrum
Analyzer
4
ZL=50Ω
ZG=50Ω
C1
5
Directional
Coupler
Attenuator
Power
Meter
C2
+
DC Power
Supply VDD
C1, C2: 4700pF, 22uF in parallel
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
2
1
4
5
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANT
RA55H3340M
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the
substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form
the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF
connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal
expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving
screws or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The soldering temperature must be lower than 260°C for a maximum of 10 seconds, or lower than 350°C for a
maximum of three seconds.
Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=55W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pout
Rth(ch-case)
Pin
IDD @ ηT=35%
VDD
Stage
(W)
(W)
(V)
(°C/W)
(A)
st
1
0.05
1.5
23.0
0.26
12.5
2nd
1.0
13.0
2.4
3.10
rd
3
13.0
55.0
1.2
8.15
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.26A – 1.5W + 0.05W) x 23.0°C/W = Tcase + 41.4 °C
Tch2 = Tcase + (12.5V x 3.10A - 13.0W + 1.5W) x 2.4°C/W = Tcase + 65.4 °C
Tch3 = Tcase + (12.5V x 8.15A - 55.0W + 13.0W) x 1.2°C/W = Tcase + 71.9 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=55W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (55W/38% – 55W + 0.05W) = 0.33 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 71.4 °C
Tch2 = Tair + 95.4 °C
Tch3 = Tair + 101.9 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANT
RA55H3340M
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=4V, the output power and drain current increases substantially.
Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that
do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products are highly
reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is
sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements.
Examples of critical communications elements would include transmitters for base station applications and fixed
station applications that operate with long term continuous transmission and a higher on-off frequency during
transmitting, especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and
less than 90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In
the worst case there is risk for burn out of the transistors and burning of other parts including the substrate in
the module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our
manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed
equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA55H3340M
Keep safety first in your circuit designs !
Mitsubishi
Electric Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Notes regarding these materials
These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license
under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation
or a third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs,
algorithms, or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein. The information described here may contain technical
inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for
any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention
to information published by Mitsubishi Electric Corporation by various means, including the
Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data,
diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total
system before making a final decision on the applicability of the information and products. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from
the information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please
contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
when considering the use of a product contained herein for any specific purposes, such as
apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea
repeater use.
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whole or in part these materials.
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