MITSUBISHI RD06HVF1

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD06HVF1
OBSERVE HANDLING PRECAUTIONS
Silicon MOSFET Power Transistor 175MHz,6W
OUTLINE
DRAWING
3.6±0.2
9±0.4
4
1.2±0.4
1
For output stage of high power amplifiers in
VHF band mobile radio sets.
2 3
2.5 2.5
5deg
9.5MAX
9.3MIN
0.8±0.15
APPLICATION
RoHS COMPLIANT
note(3)
7.5MIN
4.8MAX
12.3MIN
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
12.3±0.6
FEATURES
1.3±0.4
9.1±0.7
3.2±0.4
RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
0.62±0.2
4.5±0.5
DESCRIPTION
3.1±0.6
RoHS Compliance,
PINS
1:GATE
2:SOURCE
3:DRAIN
4:FIN(SOURCE)
note:
(1)Torelance of no designation means typical value.
Dimension in mm.
(2)
:Dipping area
RD06HVF1-101 is a RoHS compliant products.
:Copper of the ground work is exposed in case of frame separation.
(3)
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD06HVF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD06HVF1
Silicon MOSFET Power Transistor 175MHz,6W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
50
V
Vds=0V
+/- 20
V
Tc=25°C
27.8
W
Zg=Zl=50Ω
0.6
W
3
A
°C
150
-40 to +150 °C
°C/W
junction to case
4.5
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
IDSS
IGSS
VTH
Pout
ηD
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=12.5V, Pin=0.3W,
f=175MHz, Idq=0.3A
VDD=15.2V,Po=6W(Pin Control)
f=175MHz,Idq=0.3A,Zg=50Ω
Load VSWR=20:1(All Phase)
LIMITS
MIN TYP MAX.
10
1
1.9
4.9
6
10
60
65
No destroy
UNIT
uA
uA
V
W
%
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD06HVF1
MITSUBISHI ELECTRIC
2/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD06HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS
5
CHANNEL DISSIPATION
Pch(W)
50
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
4
30
3
Ids(A)
40
20
Ta=+25°C
Vds=10V
2
1
10
0
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(°C)
0
2
4
6
Vgs(V)
8
10
Vds VS. Ciss CHARACTERISTICS
Vds-Ids CHARACTERISTICS
4
60
Vgs=10V
Ta=+25°C
Vgs=9V
3
Ta=+25°C
f=1MHz
50
2
Vgs=7V
1
Ciss(pF)
Ids(A)
40
Vgs=8V
2
4
6
Vds(V)
8
20
Vgs=6V
10
Vgs=5V
0
0
0
30
0
10
Vds VS. Coss CHARACTERISTICS
30
Vds VS. Crss CHARACTERISTICS
10
Ta=+25°C
f=1MHz
80
Ta=+25°C
f=1MHz
8
Crss(pF)
60
40
6
4
20
2
0
0
0
10
20
30
0
10
20
30
Vds(V)
Vds(V)
RD06HVF1
20
Vds(V)
100
Coss(pF)
10
MITSUBISHI ELECTRIC
3/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD06HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
Po
Po
12
90
10
80
30
60
ηd
40
20
Gp
20
10
5
10
15
20
Pin(dBm)
25
6
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=0.3A
4
Idd
0.0
30
Vdd-Po CHARACTERISTICS
3
Po
0.5
30
0.6
Idd(A)
2
8
Idd
6
1
4
+25°C
-25°C
10
Po(W)
0.4
Vds=10V
Tc=-25~+75°C
4
Ids(A),GM(S)
12
0.3
Pin(W)
5
4
14
0.2
50
Vgs-Ids CHARACTORISTICS 2
16
Ta=25°C
f=175MHz
Pin=0.3W
Idq=0.3A
Zg=ZI=50 ohm
0.1
60
40
0
0
0
ηd
2
Idd
0
70
8
ηd(%)
80
Pout(W) , Idd(A)
Po(dBm) , Gp(dB) , Idd(A)
40
100
14
100
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=0.3A
ηd(%)
50
3
+75°C
2
1
2
0
0
4
6
8
10
Vdd(V)
12
14
0
0
2
4
6
Vgs(V)
8
10
Vgs-gm CHARACTORISTICS
2.0
Vds=10V
Tc=-25~+75°C
gm(S)
1.5
-25°C
1.0
+25°C
0.5
+75°C
0.0
0
RD06HVF1
1
2
3
4 5
Vgs(V)
6
7
8
9
MITSUBISHI ELECTRIC
4/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD06HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
TEST CIRCUIT(f=175MHz)
Vgg
C1
Vdd
9.1kOHM
L6
C3
8.2kOHM
100OHM
C2
300pF
L1
L2
L4
L3
175MHz
RD06HVF1
L5
RF-IN
RF-OUT
82pF
300pF
10pF
7
5pF
5
30pF
70
25
30
87
33
52
92
55
100
72
75
92
100
Note:Board material-Teflon substrate
C1:2200pF 10uF in parallel
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
C2:2200pF*2 in parallel
Dimensions:mm
C3:2200pF,330uF in parallel
L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire
L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire
L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD06HVF1
MITSUBISHI ELECTRIC
5/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD06HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=175MHz Zout*
Zo=50ohm
f=135MHz Zo
f=175MHz Zin*
f=175MH Zo
Zin , Zout
RD06HVF1
f
Zin
Zout
(MHz)
(ohm)
(ohm)
Conditions
175
4.25-j25.6
5.64-j1.05
Po=10W, Vdd=12.5V,Pin=0.3W
MITSUBISHI ELECTRIC
6/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD06HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz]
10
30
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
RD06HVF1
S11
(mag)
0.985
0.900
0.799
0.667
0.636
0.630
0.645
0.663
0.685
0.708
0.729
0.752
0.771
0.789
0.804
0.819
0.834
0.842
0.851
0.859
0.866
0.870
(ang)
-18.8
-50.4
-74.4
-109.6
-129.0
-140.1
-148.2
-155.0
-160.7
-165.9
-170.8
-175.4
179.9
175.4
171.2
166.9
162.6
158.5
154.3
150.3
146.2
142.3
S21
(mag)
(ang)
34.407
165.9
30.427
143.3
24.979
126.1
15.565
100.7
10.953
85.1
8.194
73.7
6.528
63.9
5.315
55.2
4.437
47.4
3.771
39.9
3.233
33.2
2.826
26.8
2.475
20.7
2.186
15.2
1.943
9.7
1.738
4.6
1.560
0.0
1.410
-4.5
1.275
-8.7
1.160
-12.6
1.058
-16.9
0.963
-20.0
S12
(mag)
0.008
0.021
0.029
0.032
0.032
0.029
0.027
0.027
0.031
0.039
0.048
0.059
0.070
0.083
0.095
0.108
0.120
0.133
0.145
0.157
0.167
0.179
MITSUBISHI ELECTRIC
7/8
S22
(ang)
76.2
59.4
43.2
27.3
23.1
25.3
34.5
49.1
61.8
71.0
75.8
77.9
76.9
76.1
73.7
71.0
68.1
65.0
61.6
58.2
54.5
51.0
(mag)
0.826
0.767
0.677
0.547
0.523
0.528
0.561
0.588
0.622
0.657
0.686
0.715
0.743
0.763
0.789
0.804
0.820
0.837
0.847
0.858
0.869
0.876
(ang)
-17.3
-43.6
-65.0
-96.8
-113.4
-124.7
-132.7
-139.6
-145.9
-151.7
-157.0
-162.3
-167.6
-172.3
-177.3
178.1
173.5
169.0
164.8
160.2
155.7
151.8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD06HVF1
Silicon MOSFET Power Transistor 175MHz,6W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme
short current flow between the drain and the source of the device. These results causes in fire or injury.
RD06HVF1
MITSUBISHI ELECTRIC
8/8
10 Jan 2006