MITSUBISHI RD09MUP2

Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD09MUP2
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
(a)
DESCRIPTION
(b)
(b)
RD09MUP2 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
0.65+/-0.2
7.0+/-0.2
0.2+/-0.05
FEATURES
(4.5)
•High power gain:
Pout>8W, Gp>[email protected]=7.2V,f=520MHz
INDEX MARK
[Gate]
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
4.2+/-0.2
(d)
5.6+/-0.2
6.2+/-0.2
(3.6)
8.0+/-0.2
2.6+/-0.2
0.95+/-0.2
(c)
TOP VIEW
SIDE VIEW
BOTTOM VIEW
0.7+/-0.1
1.8+/-0.1
DETAIL A
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
For output stage of high power amplifiers in
UHF band mobile radio sets.
SIDE VIEW
RoHS COMPLIANT
Standoff = max 0.05
APPLICATION
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RD09MUP2 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Drain Current
Input Power
Channel dissipation
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Zg=Zl=50Ω
Tc=25°C
Junction to case
RATINGS
40
-5 to +10
4.0
1.6
83
150
-40 to +125
1.5
UNIT
V
V
A
W
W
D
G
°C
°C
°C/W
S
SCHEMATIC DRAWING
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
IDSS
IGSS
VTH
Pout
ηD
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
VSWRT Load VSWR tolerance
CONDITIONS
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
f=520MHz , VDD=7.2V
Pin=0.8W,Idq=1.0A
VDD=9.5V,Po=8W(Pin Control)
f=520MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
MIN
0.5
8
50
LIMITS
TYP
MAX.
10
1
2.5
9
No destroy
UNIT
uA
uA
V
W
%
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD09MUP2
17 Aug 2010
1/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD09MUP2
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
CHANNEL DISSIPATION Pch(W)
,,,
60
Vgs-Ids CHARACTERISTICS
8
Ta=+25°C
Vds=10V
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(t=0.5mm)
50
Ids
6
30
Ids(A),GM(S)
40
On PCB with Termal sheet
and Heat-sink
(Size : 41 x 55mm, t=7.2 mm)
20
4
GM
2
Free Air
10
0
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(deg:C.)
200
0
Vds-Ids CHARACTERISTICS
Ta=+25°C
3
4
160
Vgs=4.5V
8
Ta=+25°C
f=1MHz
140
7
120
Ciss(pF)
Vgs=4.0V
6
Ids(A)
2
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
9
5
Vgs=3.5V
4
3
Vgs=3.0V
100
80
60
2
40
1
20
0
0
0
1
2
3
4
5
Vds(V)
6
7
8
9
0
Vds VS. Coss CHARACTERISTICS
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
20
160
Ta=+25°C
f=1MHz
140
Ta=+25°C
f=1MHz
18
16
120
14
100
Crss(pF)
Coss(pF)
1
80
60
12
10
8
6
40
4
20
2
0
0
0
5
10
Vds(V)
15
0
20
RD09MUP2
5
10
Vds(V)
15
20
17 Aug 2010
2/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD09MUP2
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=520MHz
20
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=1.0A
80
Po
15
30
ηd
20
40
Gp
10
Pout(W) , Idd(A)
60
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
40
80
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=1.0A
70
ηd
60
10
40
30
5
20
50
Po
20
Idd
Idd
10
0
0
0
0
5
10
15
20
Pin(dBm)
ηd(%)
Pin-Po CHARACTERISTICS @f=520MHz
25
30
0.0
35
0.5
1.0
Pin(W)
1.5
0
2.0
Vdd-Po CHARACTERISTICS @f=520MHz
20
10
Po(W)
15
Po
8
10
5
Idd
5
Idd(A)
Ta=25°C
f=520MHz
Pin=1.0W
Idq=1.0A
Zg=ZI=50 ohm
3
0
0
4
6
8
Vdd(V)
10
12
RD09MUP2
17 Aug 2010
3/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TEST CIRCUIT (f=520MHz)
Vgg
Vdd
C1
C2
19mm W
W 19mm
RD09MUP2
520MHz
L 5pF
4.7K Ohm
RF-in
13mm
14.5mm
3.5mm
RF-out
6mm
3mm
330pF
5pF
22uF,50V
47pF
33pF
5mm
21mm
7mm 330pF
5pF
Note:Board material= glass-Epoxy Substrate
L:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter)
Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm C1,C2:2200pF
W:Line width=1.0mm
RD09MUP2
17 Aug 2010
4/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
100
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
420
440
460
480
500
520
540
560
580
600
620
640
660
680
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
S11
(mag)
0.900
0.901
0.905
0.908
0.909
0.912
0.916
0.918
0.922
0.923
0.928
0.930
0.933
0.936
0.937
0.939
0.939
0.945
0.947
0.950
0.952
0.950
0.952
0.953
0.953
0.956
0.957
0.961
0.957
0.961
0.962
0.960
0.962
0.963
0.963
0.964
0.962
0.964
0.965
0.965
0.962
0.967
0.963
0.964
0.966
0.964
S21
(ang)
-175.7
-176.4
-176.7
-177.2
-177.5
-177.6
-178.0
-178.5
-178.7
-178.9
-179.0
-179.1
-179.3
-179.6
179.9
179.7
179.3
179.1
178.9
178.8
178.7
178.3
178.1
177.6
177.2
177.0
177.0
176.9
176.8
176.5
176.2
176.0
175.5
175.3
175.2
175.0
175.0
174.7
174.5
174.1
173.8
173.5
173.5
173.2
173.1
173.0
(mag)
4.425
3.651
3.056
2.614
2.273
2.003
1.787
1.602
1.442
1.297
1.176
1.075
0.989
0.910
0.841
0.775
0.718
0.667
0.622
0.582
0.548
0.513
0.480
0.455
0.427
0.402
0.383
0.362
0.344
0.326
0.311
0.298
0.283
0.269
0.259
0.247
0.237
0.230
0.220
0.211
0.202
0.193
0.189
0.180
0.176
0.170
S12
(ang)
75.0
71.1
67.4
64.2
61.4
58.7
55.9
53.3
50.6
48.0
45.8
44.1
42.3
40.0
37.9
36.3
34.7
33.4
32.1
30.7
29.2
28.0
26.8
25.7
24.4
23.7
23.2
22.1
21.3
20.4
19.5
19.0
18.6
17.5
17.2
16.9
16.5
15.8
16.2
15.4
15.1
15.0
14.4
13.8
14.6
14.0
RD09MUP2
(mag)
0.016
0.014
0.014
0.013
0.013
0.011
0.011
0.010
0.010
0.009
0.008
0.008
0.008
0.008
0.007
0.008
0.008
0.008
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.014
0.014
0.015
0.015
0.016
0.017
0.018
0.019
0.019
0.020
0.021
0.022
0.022
0.023
0.024
0.025
0.026
0.026
0.027
0.028
0.029
S22
(ang)
-7.1
-8.2
-10.4
-10.9
-10.0
-8.4
-6.0
-4.1
-5.6
0.6
2.6
8.2
15.1
25.3
27.2
35.5
40.1
45.0
51.3
56.2
56.9
59.9
64.2
67.0
66.6
68.9
70.7
70.9
72.1
72.0
74.3
74.2
74.5
74.9
74.1
72.8
75.4
75.1
76.0
75.8
75.0
75.8
75.8
75.6
76.0
76.5
(mag)
0.798
0.804
0.808
0.812
0.819
0.830
0.842
0.851
0.857
0.859
0.863
0.866
0.878
0.889
0.895
0.897
0.899
0.900
0.906
0.913
0.919
0.921
0.924
0.925
0.924
0.928
0.933
0.937
0.939
0.936
0.937
0.937
0.938
0.943
0.944
0.949
0.946
0.946
0.944
0.948
0.949
0.952
0.952
0.949
0.951
0.952
(ang)
-173.9
-174.4
-174.9
-175.1
-175.2
-175.1
-175.3
-175.3
-175.8
-176.1
-176.3
-176.8
-177.1
-177.4
-177.8
-178.1
-178.6
-178.8
-179.3
-179.5
179.8
179.6
179.0
178.8
178.6
178.2
177.7
177.3
177.0
176.7
176.4
176.1
175.8
175.5
175.0
174.7
174.7
174.5
174.1
173.8
173.4
172.8
172.7
172.7
172.6
172.2
17 Aug 2010
5/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
100
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
420
440
460
480
500
520
540
560
580
600
620
640
660
680
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
S11
(mag)
0.914
0.918
0.920
0.922
0.921
0.921
0.922
0.925
0.924
0.928
0.929
0.936
0.935
0.936
0.937
0.937
0.939
0.941
0.944
0.946
0.948
0.950
0.949
0.948
0.950
0.952
0.954
0.958
0.954
0.957
0.956
0.955
0.956
0.959
0.958
0.959
0.962
0.962
0.961
0.960
0.961
0.961
0.960
0.962
0.962
0.960
S21
(ang)
-176.9
-177.4
-178.0
-178.3
-178.6
-178.8
-179.3
-179.4
-179.8
180.0
-180.0
180.0
179.8
179.4
179.0
178.9
178.5
178.5
178.3
178.1
178.0
177.9
177.5
177.1
177.0
176.6
176.5
176.5
176.4
176.3
176.0
175.5
175.2
174.9
175.0
174.8
174.8
174.5
174.3
174.0
173.6
173.3
173.3
173.1
172.9
172.8
(mag)
4.363
3.638
3.060
2.614
2.287
2.039
1.840
1.665
1.503
1.364
1.240
1.144
1.064
0.993
0.923
0.851
0.795
0.738
0.696
0.654
0.619
0.585
0.549
0.518
0.491
0.467
0.444
0.426
0.400
0.382
0.367
0.350
0.334
0.319
0.308
0.293
0.281
0.271
0.261
0.252
0.244
0.233
0.225
0.219
0.211
0.206
S12
(ang)
78.5
74.9
71.4
68.8
66.7
64.6
62.1
59.6
56.8
54.7
52.9
51.1
49.4
47.2
45.2
43.5
41.7
40.4
39.3
38.0
36.5
34.8
33.5
32.2
31.1
30.3
29.5
28.5
27.2
26.3
25.6
24.9
23.9
23.4
22.3
22.0
21.5
21.0
20.4
20.0
19.5
18.9
18.5
18.2
17.5
18.0
RD09MUP2
(mag)
0.012
0.012
0.011
0.011
0.011
0.010
0.010
0.010
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.010
0.011
0.011
0.012
0.012
0.014
0.014
0.014
0.015
0.016
0.017
0.017
0.018
0.019
0.019
0.020
0.021
0.021
0.022
0.023
0.023
0.025
0.025
0.026
0.027
0.027
0.029
0.029
S22
(ang)
0.2
-0.6
0.3
1.6
4.4
6.5
8.5
8.0
10.9
13.1
18.6
26.6
27.8
32.4
34.4
40.1
47.0
52.8
50.3
56.9
59.5
62.7
63.1
63.6
65.6
66.3
67.6
69.8
69.8
70.8
71.9
72.4
72.5
73.0
72.7
74.0
73.9
74.2
74.1
73.9
74.6
74.4
74.7
74.7
74.3
74.4
(mag)
0.825
0.833
0.832
0.829
0.833
0.846
0.863
0.870
0.868
0.864
0.860
0.866
0.879
0.891
0.896
0.896
0.895
0.892
0.898
0.908
0.912
0.914
0.915
0.916
0.918
0.919
0.924
0.930
0.932
0.929
0.929
0.931
0.930
0.934
0.939
0.944
0.939
0.938
0.939
0.940
0.942
0.944
0.945
0.945
0.948
0.948
(ang)
-175.5
-176.2
-177.1
-177.3
-177.4
-177.2
-177.4
-177.5
-177.9
-178.2
-178.1
-178.4
-178.8
-179.0
-179.4
-179.7
-179.8
-180.0
179.6
179.3
178.8
178.4
178.1
178.0
177.8
177.6
177.0
176.4
176.3
176.0
175.9
175.8
175.3
174.8
174.5
174.3
174.1
174.0
173.9
173.4
173.0
172.5
172.3
172.3
172.4
172.0
17 Aug 2010
6/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to arise
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products are
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters for
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact to
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
RD09MUP2
17 Aug 2010
7/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these materials
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product
best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other
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